本研究將釔鋁石榴石螢光體(YAG:Ce)前驅物做HMDS前置處理法，溶膠-凝膠法披覆SiO2於YAG:Ce螢光粉體表面，並以溶液熱法合成出YAG:Ce螢光粉體，以探討其各製程對YAG:Ce螢光體結構，粒徑與發光效率之影響。

研究成果顯示，（1）.YAG:Ce前驅物經由HMDS處理後，經FTIR分析可有效的移除部分表面羥基、碳氫基、氮氫基及氮氧基，且高溫煆燒後，經HMDS前置處理的YAG:Ce之PL光譜放射峰之強度會隨之增加，其推測原因為Si4+可取代YAG晶格中Al3+四面體位置，使Ce3+離子更有效擴散摻雜於YAG晶格中進而提升發光強度。從TEM觀察與粒徑分析可知，隨著HMDS的比例增加YAG:Ce粉體粒徑會略為減小。（2）.披覆不同比例之SiO2於 YAG:Ce螢光粉體表面，由FTIR分析證實了YAG:Ce奈米螢光粉體裡有SiO2存在，並從SEM-EDX圖顯示SiO2成功的包覆在螢光粉體外圍。且因SiO2包覆在YAG:Ce奈米螢光粉體外圍，減少能量損失於表面上，相對於未披覆SiO2的YAG:Ce螢光粉體有較佳之光致發光效率；並由ICP量測換算出YAG:Ce中SiO215wt%時為最佳之披覆量。（3）.以溶熱法合成之YAG:Ce由XRD結果得知溶熱溫度達260℃，壓力1,300psi且持溫8hr時開始有YAG結晶相產生，且在溫度300℃、壓力2,000psi且持溫8hr時達最佳之結晶性。且隨溶熱製程溫度、壓力與反應時間的增加粒徑也隨之增加。然而，由PL光譜圖得知以溶熱合成之YAG:Ce的最佳發光強度，但卻遠劣於以固態燒結法之YAG:Ce（980℃持溫8hr），其推測原因為Ce3+離子在溶熱過程中流失或溶熱法之能量不足以使Ce3+離子有效摻雜入YAG主體晶格中。

This study is to investigate the structure, grain size and luminescence of garnet phosphors (YAG:Ce), which were prepared by a coprecipitation method and then treated with HMDS pretreatment before firing, or coated with SiO2 via sol-gel method of TEOS. The phosphors were also successfully fabricated by the solvothermal method at low temperatures.

The results showed that YAG:Ce precursors with HMDS pretreatment could remove the groups of O-H, C-H, N-H and N-O based on the FTIR measurements. The PL intensity of HMDS-pretreated YAG:Ce after being fired at 980oC revealed to increase as increasing the amount of HMDS in the reaction. The presumed reason was that Si4+ ions would replace the sites of tetrahedral Al3+ ions and promote the dissolution of Ce3+ ions into YAG lattice more efficiently as YAG:Ce was illuminated by blue light. It was also observed from TEM images and particle size analysis that the grain sizes were smaller with HMDS pretreatment than those without it. Secondly, FTIR and SEM-EDS mapping results revealed that SiO2 existed on the surface of YAG:Ce phosphors via the sol-gel reaction of TEOS. The PL intensity of SiO2-coated YAG:Ce phosphors were higher than those without SiO2 coating. Furthermore, the ICP conversion results showed that YAG:Ce with around 15wt% SiO2 coating exhibited optimal PL intensity compared to others. This enhancement was supposed to result from the reduction of surface non-radiation centers. Finally, YAG structure could be produced when the solvothermal conditions were above 260℃/1,300psi/8hr, and the crystallinity attended to be optimal at 300℃/2,000psi/8hr. The grain size of the solvothermal YAG:Ce increased as increasing the temperature, pressure and reaction time. However, the PL intensity of the solvothermal YAG:Ce was inferior to the YAG:Ce after being fired at 980℃ for 8hr. The proposed reasons may be the Ce3+ ions flowing away during the solvothermal reaction or the difficulty for Ce3+ ions to dope into the YAG host significantly.

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