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研究生: 莊家胤
Chuang, Chia-Yin
論文名稱: 漫射型奈米柱反射鏡應用於覆晶型發光二極體增加光輸出效率
Light Extraction Improvement of Flip-Chip Light-Emitting-Diode Using Diffused Nanorod Reflector
指導教授: 李清庭
Lee, Ching-Ting
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2012
畢業學年度: 100
語文別: 中文
論文頁數: 62
中文關鍵詞: 漫射型反射鏡覆晶型發光二極體氮化鎵發光二極體氧化鋅奈米柱陣列
外文關鍵詞: Diffused ZnO nanorod reflector, Flip-chip light emitting diodes, GaN-basedlight-emitting-diodes, ZnO nanorod arrays
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  • 從前人的文獻中了解到金屬反射鏡與氧化鋅奈米柱陣列皆為一有效改善發光二極體之光輸出功率的方法。此研究提出之漫射型奈米柱反射鏡並應用於傳統覆晶型發光二極體元件上改善光萃取效率,而漫射型奈米柱反射鏡是將高反射率的鋁金屬沉積在氧化鋅奈米柱陣列之上所形成。由於此漫射型奈米柱反射鏡的粗糙化金屬表面與低折射係數的氧化鋅奈米柱陣列使得此新結構應用於覆晶型發光二極體的光輸出功率與光強度分佈的元件特性獲得改善。相較於傳統覆晶型發光二極體,本研究提出之奈米柱長度為500奈米之漫射型奈米柱反射鏡應用於覆晶型發光二極體在光輸出功率上有56.6%的提升。

    From previous references, the metal reflector and the ZnO nanorod array were useful method to enhance light output power of light-emitting-diodes (LEDs). In this work, the diffused ZnO nanorod reflectors were designed to improve the light extraction of conventional flip-chip light-emitting-diodes (FCLEDs). By depositing the high reflective Al metal on the ZnO nanorod arrays, the diffused ZnO nanorod reflectors were fabricated. As the result of the roughened high reflective Al metal and the light scattering in the low refractive ZnO nanorod array, the light output power and the light distribution of the conventional FCLEDs were improved by using the diffused ZnO nanorod reflectors. Compared with the conventional FCLEDs, the increase percentage of 56.6% of the light output power was enhanced for the FCLEDs with diffused 500-nm-long ZnO nanorod reflector.

    摘要 I Abstract II 誌謝 III 目錄 IV 表目錄 VII 圖目錄 VIII 第一章緒論 1 1.1發光二極體的發展 1 1.2動機與目的 3 第二章原理 4 2.1反射鏡簡介 4 2.2發光二極體之發光原理 5 2.2.1弗斯涅爾定律 6 2.2.2司乃耳定律 7 2.3漫射理論 8 2.4 氧化鋅奈米柱成長原理 10 2.5 TracePro模擬軟體 12 2.6量測儀器 13 2.6.1積分球原理: 13 2.6.2發光二極體多角度分析儀與電荷耦合元件: 13 第三章 元件製程步驟 19 3.1氮化鎵/氮化銦鎵發光二極體製程步驟 19 3.2水熱法成長奈米柱 24 3.3漫射型奈米柱反射鏡製作 25 3.4低等效折射係數插入層 28 第四章 實驗量測分析與結果討論 36 4.1漫射分析 36 4.1.1掃描式電子顯微鏡 36 4.1.2反射強度量測 37 4.1.3 元件輸出光功率特性 38 4.1.4 模擬軟體Tracepro之元件輸出光功率特性 39 4.1.5多角度光強分析儀與電荷耦合元件 40 4.1.6奈米柱陣列之等效折射係數 40 4.2元件特性比較 41 4.2.1元件電流電壓的關係 41 4.2.2元件輸出光功率特性 42 4.2.3多角度光強分析儀與電荷耦合元件 43 4.2.4元件電激發光光譜分析 44 4.3低折射係數插入層的驗證 44 4.3.1元件特性比較 46 第五章 結論 59 參考文獻 60

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