本論文工作是使用離子束濺鍍系統成長[ZnO/V2O5]多層膜。實驗分成兩部份。第一部份為改變V2O5摻雜厚度，第二部份是將多層膜作高真空退火處理，研究多層膜電性及結構特性。
由SQUID量測多層膜特性，顯示樣品呈現鐵磁性，並隨退火溫度產生不同的變化，[ZnO(20Å)/V2O5(1Å)]25多層膜磁性隨退火溫度上升而變強，[ZnO(20Å)/V2O5(3Å)]25多層膜磁性隨退火溫度上升而變弱，[ZnO(20Å)/V2O5(2Å)]25多層膜變化則介於兩者之間，磁性來源我們以磁性極化子模型來解釋，發現氧空缺和薄膜磁性變化有著重要的關係。

In this study,we deposited [ZnO(20Å)/V2O5(xÅ)](x =1,3) films on Al2O3(0001) substrate by an ion beam sputter. The structural, electrical and magnetic properties of [ZnO/V2O5] films annealed at 200,400 and 600℃ have been investigated.The results of x-ray diffraction reveal no detectable V clusters or formation of secondary phases. The ferromagnetism of [ZnO(20Å)/ V2O5 (1Å)] films increased as the annealing temperature was decreased. However, the ferromagnetism of [ZnO(20Å)/V2O5(3Å)] films decreased as the annealing temperature was increased.The results suggest that ferromagnetism in [ZnO/ V2O5] comes from an intrinsic factor highly correlated to the oxygen vacancy defects.The dopant V2O5 played an important role effect defects in [ZnO/V2O5] films.

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