簡易檢索 / 詳目顯示

研究生: 黃俍瑋
Huang, Liang-Wei
論文名稱: 氧化鋅鎵電阻式記憶體及pH感測器之製作與研究
Fabrication and Investigation of ZnGa2O4 Insulator for RRAM and pH Sensor
指導教授: 張守進
Chang, Shoou-Jinn
共同指導教授: 陳志方
Chen, Jone-Fang
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2020
畢業學年度: 108
語文別: 英文
論文頁數: 144
中文關鍵詞: 非揮發式電阻式記憶體氧化鋅鎵氧化鋁鎵氧化銦鎵異質接面酸鹼值感測器延伸式閘極場效電晶體
外文關鍵詞: non-volatile resistive memory, zinc gallium oxide, gallium aluminum oxide, indium gallium oxide, heterojunction, pH sensors, extended gate field effect transistor pH sensors.
相關次數: 點閱:117下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  •   本論文中,主要以氧化鋅鎵作為非揮發性電阻式隨機存取記憶體的氧化層,並經過改變電極材料及其他氧化鎵系列之氧化層改善其記憶體特性。
      首先,我們探討在金屬電極為白金、鈦、鋁、鎳、銀之下,氧化鋅鎵記憶體的製備方式與其電特性。因為這五種金屬電極對於氧化層的接觸面上有不同的性質,因此我們採用穿透式電子顯微鏡(TEM)分析上電極與電阻轉換層的介面,確認此介面對電阻式記憶體的電性影響。
      接著我們分析以鈦為上電極,而退火製程對於以氧化鋅鎵作為主動層的電阻式記憶體電特性的影響,結果顯示這些製備完成的電阻式記憶體元件,有著雙極性的轉換特性,並在直流操作下,高低阻態轉換超過100次,並在室溫、100毫伏特讀取電壓下,保持高低阻態各10000秒的穩定記憶功能。而當退火溫度越高時,主動層內的氧空缺減少,使得元件特性越趨退化。接著,本論文針對上述記憶體中表現最好的未退火Ti/ZnGa2O4/Pt元件做改善,我們利用射頻磁控濺鍍法在電阻轉換層中加上一層氧化鎵系列的氧化鋁鎵及氧化銦鎵,並控制總厚度相同,發現經由此方法製程的異質結構,能有效的使元件工作電壓下降及有著更大的On/Off Ratio,在較低功耗下獲得更好的記憶體特性。並且在異質接面記憶體下,能夠高低阻態轉換超過100次,並在室溫及100毫伏特讀取電壓下,保持高低阻態各10000秒的穩定記憶特性。
      最終我們研究以鈦為上電極,白金作為下電極,層靠近下電極往上電極分別為氧化銦鎵、氧化鋅鎵、氧化鋁鎵之三層異質接面電阻式記憶體,發現藉由不同氧化層間異質結構,電阻轉換將因為層間接觸電阻及氧空缺濃度梯度而改善電特性,意味著不只金屬電極材料及電阻轉換層材料,異質結構電阻轉換層也是改善記憶體特性的重要方法之一。
      接著,我們採用相同製程設備,製作以ZnGa2O4作為感測材料的酸鹼值感測器,期許研發出具有高精準度、高靈敏度、高穩定度、快速反應並可以即時監測之酸鹼值感測器,希望未來可以結合物聯網、人工智慧技術,在新生代產業貢獻一己之力。
      首先,以射頻磁控濺鍍法沉積氧化鋅鎵薄膜,並透過調整製程腔體通氧流量來調變實驗參數,製作出不同氧比例的酸鹼值感測器,且在爐管中採用不同溫度進行退火製程,進而探討不同條件下,製備之薄膜特性分析。
      接著,以不同氧通量之氧化鋅鎵薄膜作為感測層,製作延伸式閘極場效電晶體酸鹼值感測器,探討元件在pH2-12範圍內的感測靈敏度及線性度,並可以發現元件靈敏度隨著氧通量增加而上升。接著對經過不同退火溫度之氧化鋅鎵薄膜製作的酸鹼值感測器在量測範圍最極端的酸(pH2)與鹼(pH12)做電流-時間的連續性量測,可以發現,當退火溫度到達700度後,有著最高的抗腐蝕性,並擁有最好的穩定性。

    In this thesis, ZnGa2O4 is mainly used as the oxide layer of non-volatile resistive random access memory, and its memory characteristics are improved by changing the electrode material and adding other oxide layers of the gallium oxide series.
    First, we discuss the manufacturing method and electrical characteristics of zinc-gallium-oxide memory when the material of the top electrode are platinum, titanium, aluminum, nickel, and silver. Because these five metal electrodes have different properties on the contact surface of the oxide layer, we use TEM to analyze the interface between the top electrode and the resistance switching layer to confirm that this interface impacts the electrical behavior of the resistive memory.
    Then, we analyze the effect of the annealing process on the electrical characteristics of RRAM with zinc gallium oxide as the active layer. The results show that these RRAM have bipolar switching characteristics, and under DC operation, the high and low resistance states are switched more than 100 times, and the stable memory function of maintaining the high and low resistance states for 10,000 seconds each at room temperature and a read voltage of 100 millivolts. When the annealing temperature is higher, the oxygen vacancies in the active layer are reduced, so that the device characteristics are more and more degraded.
    Then, this thesis aims to improve the best performing unannealed Ti / ZnGa2O4 / Pt components in the above memory. We use radio frequency magnetron sputtering to add a layer of gallium oxide series material: aluminum gallium oxide and indium gallium oxide to the resistance switching layer, and the same total thickness is controlled. It is found that the heterostructure made by this method can effectively reduce the working voltage of the device and have a larger on/off ratio, it means to obtain better memory characteristics at lower power consumption. And in the heterojunction memory, it can also switch between high and low resistance state more than 100 times, and maintain stable memory characteristics of 10,000 seconds for high and low resistance state at room temperature and 100 millivolts read voltage.
    In the end, we adopted titanium as the top electrode and platinum as the bottom electrode and from the bottom electrode to the top electrode, indium gallium oxide, zinc gallium oxide, and aluminum gallium oxide as the resistive switching layer to fabricate the tri-layer memory. We find that heterostructures will improve electrical characteristics due to interlayer contact resistance and oxygen vacancy concentration gradients, which means that not only metal electrode materials and resistance switching layer materials, but also the heterostructure resistance switching layer is one of the important methods to improve memory characteristics.
    Next, we used the same types of process equipment to make a pH sensor that uses ZnGa2O4 as the sensing material. We hope to develop a pH sensor with high accuracy, high sensitivity, high stability, fast response, and real-time monitoring. It is hoped that the future can combine the Internet of Things and artificial intelligence technology to contribute to the new generation industry.
    The ZnGa2O4 film was deposited by RF magnetron sputtering, and the experimental parameters were adjusted by adjusting the oxygen flow rate of the process chamber to produce pH sensors with different oxygen ratios, and different annealing temperature was used in the furnace tube. And then the characteristics of the prepared film under different conditions are discussed.
    Then, using ZnGa2O4 films with different oxygen ratio as the sensing layer, extended gate field effect transistor pH sensors were fabricated to discuss the sensing sensitivity and linearity of the device in the pH range of 2-12, and It can be found that the sensitivity increases as the oxygen ratio increases. Then, the pH sensor made of ZnGa2O4 film with different annealing temperatures is used for the current-time continuity measurement of the most extreme acid (pH2) and alkali (pH12) in the measurement range.
    Finally, we found that when the annealing temperature reaches 700 degrees, it has the highest corrosion resistance and the best stability.

    摘要 I Abstract IV 致謝 VII Content VIII Table Caption XII Figure Caption XIV Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Background of ZnGa2O4 material 2 1.3 Overview of Memories 3 1.4 New Non-volatile Memory 4 1.4.1 Magnetic Random Access Memory 5 1.4.2 Phase Change Random Access Memory 7 1.4.3 Resistive Random Access Memory 10 1.5 Overview of pH sensors 11 1.6 Conductive Mechanism of Insulator 14 1.6.1 Ohmic Conduction 14 1.6.2 Schottky Emission 15 1.6.3 Space-Charge-Limited-Current(SCLC) 17 1.6.4 Frenkel-Poole Emission 18 1.6.5 Direct Tunneling and Fowler-Nordheim (F-N) Tunneling 19 1.6.6 Ionic Conduction 21 1.6.7 Hopping 22 1.6.7.1 Nearest Neighbor Hopping (NNH) 22 1.6.7.2 Mott Variable Range Hopping (VRH) 22 1.6.8 Trap-Assisted Tunneling (TAT) 23 1.7 Filament Theories of RRAM 23 1.7.1 Introduction 23 1.7.2 Impact of the Electrode Materials 24 1.7.3 Electrochemical (Redox) Reaction Switching Mechanism 25 1.7.4 Thermochemical Reaction Switching Mechanism 26 1.8 Site-Binding Model Theory 28 References 30 Chapter 2 Experimental Equipment 38 2.1 Introduction of Experimental Equipment 38 2.1.1 Radio Frequency Sputtering System 38 2.1.2 Evaporation systems 40 2.1.2.1 Electron beam evaporation 40 2.1.2.2 Thermal evaporation 41 2.1.3 X-ray Photoelectron Spectroscopy (XPS) 42 2.1.4 X-ray Diffraction Analysis (XRD) 43 2.1.5 Energy-Dispersive X-ray Spectroscopy (EDS) 45 2.1.6 Atomic Force Microscopes (AFM) 47 2.1.7 Measurement Systems 47 References 49 Chapter 3 Material Analysis of Fabricated ZnGa2O4 Thin Film 50 3.1 Structural Characteristic of Devices 50 3.1.1 X-ray Diffraction (XRD) Analysis 50 3.1.2 Transmission Electron Microscope (TEM) Analysis 52 3.1.3 Atomic Force Microscopy (AFM) Analysis 53 3.2 Elemental Analysis 56 3.2.1 X-ray Photoelectron Spectroscopy (XPS) 56 3.2.2 Energy Dispersive X-ray Spectroscopy (EDS) 60 3.3 Optical Characteristics 63 References 68 Chapter 4 Fabrication and Characteristics of ZnGa2O4 based RRAM Devices 70 4.1 The Differences of the Electrode Materials 70 4.1.1 Free energy 70 4.1.2 The characteristic of the chosen electrode materials 72 4.2 Experimental processes 73 4.3 Results and Discussion 75 4.3.1 The Electrical Characteristics of Single-Layer RRAM 76 4.3.1.1 Forming Process 76 4.3.1.2 The IV Sweep of Single-Layer RRAM 81 4.3.1.3 The Endurance Test of Single-Layer RRAM 85 4.3.1.4 The Retention Test of Single-Layer RRAM 94 4.4 The Improvement of Ti/ZnGa2O4/Pt RRAM 98 4.4.1 Motivation 98 4.4.2 Experimental Processes 98 4.4.3 The Electrical Characteristics of Bi-Layer RRAM 100 4.4.3.1 Forming Process 100 4.4.3.2 The IV Sweep of Bi-Layer RRAM 102 4.4.3.3 The Retention Test of Bi-Layer RRAM 107 4.5 The Heterojunction Tri-Layer RRAM 108 4.5.1 Motivation 108 4.5.2 Experimental Processes 108 4.5.3 The Electrical Characteristics of Tri-Layer RRAM 110 4.5.3.1 Forming Process 110 4.5.3.2 The IV Sweep of Tri-Layer RRAM 111 4.5.3.3 The Endurance Test of Tri-Layer RRAM 112 4.5.3.4 The Retention Test of Tri-Layer RRAM 112 4.5.4 Impact of heterojunction 113 References 115 Chapter 5 Fabrication and Characteristics of ZnGa2O4 pH sensors 116 5.1 Experimental Processes 116 5.1.1 Manufacturing of ZnGa2O4 EGFET pH sensor 116 5.1.2 Measuring of ZnGa2O4 EGFET pH sensor 118 5.2 Characteristics of ZnGa2O4 pH Sensors 119 5.2.1 Constant Current Mode Measurement 119 5.2.1.1 Characteristics of Different Oxygen Ratio 119 5.2.1.2 Characteristics of Different Annealing Temperature 122 5.2.2 Constant Voltage Mode Measurement 125 5.2.2.1 Characteristics of Different Oxygen Ratio 125 5.2.2.2 Characteristics of Different Annealing Temperature 128 5.2.3 Switch Test of ZnGa2O4 EGFET pH sensor 131 5.2.3.1 Characteristics of Different Oxygen Ratio 132 5.2.3.2 Characteristics of Different Annealing Temperature 134 Chapter 6 Conclusion and Future Work 138 6.1 Conclusions 138 6.2 Future work 141 6.2.1 Multi-bit RRAM 141 6.2.2 Flexible and Transparent RRAM 141 6.2.3 Boolean logic in 1T1R-RRAM 142 References 143

    [1] Wong, Man Hoi, et al. "Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750V." IEEE Electron Device Letters 37.2 (2015): 212-215.
    [2] Jiao, Zheng, et al. "The preparation of ZnGa2O4 nano crystals by spray coprecipitation and its gas sensitive characteristics." Sensors 2.3 (2002): 71-78.
    [3] Lu, Chih-Hung, Tuo-Hung Hou, and Tung-Ming Pan. "Low-voltage InGaZnO ion-sensitive thin-film transistors fabricated by low-temperature process." IEEE Transactions on Electron Devices 63.12 (2016): 5060-5063.
    [4] Omata, Takahisa, et al. "New ultraviolet‐transport electroconductive oxide, ZnGa2O4 spinel." Applied physics letters 64.9 (1994): 1077-1078.
    [5] Liu, Yi-Hsing, et al. "Ga-doped ZnO nanosheet structure-based ultraviolet photodetector by low-temperature aqueous solution method." IEEE Transactions on Electron Devices 62.9 (2015): 2924-2927.
    [6] Kim, Junghwan, et al. "Switching of an ultra-wide bandgap amorphous oxide insulator to a semiconductor." NPG Asia Materials 9.3 (2017): e359-e359.
    [7] Fleischer, M., L. Höllbauer, and H. Meixner. "Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases." Sensors and Actuators B: Chemical 18.1-3 (1994): 119-124.
    [8] Wei-Kang Hsieh, “Investigation of Oxide-Based Materials Applied to Nonvolatile Memory Devices,” Ph. D. dissertation, NCKU, pp. 1-3, June 2016.
    [9] The QUARTZ Corp: LiFi: A New Opportunity Enabling IoT, Aug 2016.
    [10] Dao Li-Ming, “Development and Challenges of the New Non-volatile Memory,” NANO COMMUNICATION, 21(3), pp. 9-14, 2014.
    [11] Shin, YunSeung. "Non-volatile memory technologies for beyond 2010." Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005.. IEEE, 2005.
    [12] Waser, Rainer, et al. "Redox‐based resistive switching memories–nanoionic mechanisms, prospects, and challenges." Advanced materials 21.25-26 (2009): 2632-2663.
    [13] Chi, Min-hwa, and HanMing Wu. "Technologies and materials for memory with full compatibility to CMOS." 2008 9th International Conference on Solid-State and Integrated-Circuit Technology. IEEE, 2008.
    [14] Hamdioui, Said, et al. "Test and Reliability of Emerging Non-volatile Memories." 2017 IEEE 26th Asian Test Symposium (ATS). IEEE, 2017.
    [15] Gallagher, William J., and Stuart SP Parkin. "Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip." IBM Journal of Research and Development 50.1 (2006): 5-23.
    [16] Prinz, Gary A. "Magnetoelectronics applications." Journal of magnetism and magnetic materials 200.1-3 (1999): 57-68.
    [17] Wong, H-S. Philip, et al. "Phase change memory." Proceedings of the IEEE 98.12 (2010): 2201-2227.
    [18] Atwood, Greg, and Roberto Bez. "Current status of chalcogenide phase change memory." 63rd Device Research Conference Digest, 2005. DRC'05.. Vol. 1. IEEE, 2005.
    [19] Meena, Jagan Singh, et al. "Overview of emerging nonvolatile memory technologies." Nanoscale research letters 9.1 (2014): 526.
    [20] Intel, STMicroelectronics Deliver Industry'S. First Phase. "Change Memory Prototypes."
    [21] Wire B: Samsung Electronics and Numonyx Join Forces on Phase Change Memory. San Francisco: Business Wire, 2009.
    [22] Bruyere, J. C., and B. K. Chakraverty. "Switching and negative resistance in thin films of nickel oxide." Applied Physics Letters 16.1 (1970): 40-43.
    [23] Zhuang, W. W., et al. "Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)." Digest. International Electron Devices Meeting,. IEEE, 2002.
    [24] Lee, M-J., et al. "Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates." 2008 IEEE International Electron Devices Meeting. IEEE, 2008.
    [25] Zhang, Ji, et al. "A 3D RRAM using stackable 1TXR memory cell for high density application." 2009 International Conference on Communications, Circuits and Systems. IEEE, 2009.
    [26] Jo, Sung Hyun, Kuk-Hwan Kim, and Wei Lu. "High-density crossbar arrays based on a Si memristive system." Nano letters 9.2 (2009): 870-874.
    [27] Hickmott, T. W. "Low‐frequency negative resistance in thin anodic oxide films." Journal of Applied Physics 33.9 (1962): 2669-2682.
    [28] Waser, Rainer, and Masakazu Aono. "Nanoionics-based resistive switching memories." Nanoscience And Technology: A Collection of Reviews from Nature Journals. 2010. 158-165.
    [29] Lai, Stephan, and Tyler Lowrey. "OUM-A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications." International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224). IEEE, 2001.
    [30] Liu, Bin-Da, Y. K. Su, and S. C. Chen. "Ion-sensitive field-effect transistor with silicon nitride gate for pH sensing." International Journal of Electronics Theoretical and Experimental 67.1 (1989): 59-63.
    [31] Bergveld, Piet. "Development of an ion-sensitive solid-state device for neurophysiological measurements." IEEE Transactions on Biomedical Engineering 1 (1970): 70-71.
    [32] Bausells, Joan, et al. "Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology." Sensors and Actuators B: Chemical 57.1-3 (1999): 56-62.
    [33] Lauks, I., P. Chan, and D. Babic. "The extended gate chemically sensitive field effect transistor as multi-species microprobe." Sensors and Actuators 4 (1983): 291-298.
    [34] Ecken, H., et al. "64-Channel extended gate electrode arrays for extracellular signal recording." Electrochimica acta 48.20-22 (2003): 3355-3362.
    [35] Lahav, Michal, et al. "Tailored chemosensors for chloroaromatic acIDS using molecular imprinted TiO2 thin films on ion-sensitive field-effect transistors." Analytical chemistry 73.3 (2001): 720-723.
    [36] Batista, P. D., and M. Mulato. "ZnO extended-gate field-effect transistors as pH sensors." Applied Physics Letters 87.14 (2005): 143508.
    [37] Caras, Steve, and Jiri Janata. "Field effect transistor sensitive to penicillin." Analytical Chemistry 52.12 (1980): 1935-1937.
    [38] Yin, Li-Te, et al. "Glucose ENFET doped with MnO2 powder." Sensors and Actuators B: Chemical 76.1-3 (2001): 187-192.
    [39] Chen, Jia-Chyi, et al. "Portable urea biosensor based on the extended-gate field effect transistor." Sensors and Actuators B: Chemical 91.1-3 (2003): 180-186.
    [40] Chu, B. H., et al. "Enzyme-based lactic acid detection using AlGaN∕GaN high electron mobility transistors with ZnO nanorods grown on the gate region." Applied Physics Letters 93.4 (2008): 042114.
    [41] Lam, Chung H. "Storage class memory." 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology. IEEE, 2010.
    [42] Wei-Kang Hsieh, “Investigation of Oxide-Based Materials Applied to Nonvolatile Memory Devices,” Ph. D. dissertation, NCKU, pp. 1-3, June 2016.
    [43] Gallagher, William J., and Stuart SP Parkin. "Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip." IBM Journal of Research and Development 50.1 (2006): 5-23.
    [44] Meena, Jagan Singh, et al. "Overview of emerging nonvolatile memory technologies." Nanoscale research letters 9.1 (2014): 526.
    [45] Russo, Ugo, et al. "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices." IEEE Transactions on Electron Devices 56.2 (2009): 186-192.
    [46] Hudgens, Stephen, and Brian Johnson. "Overview of phase-change chalcogenide nonvolatile memory technology." MRS bulletin 29.11 (2004): 829-832.
    [47] Hamdioui, Said, et al. "Test and Reliability of Emerging Non-volatile Memories." 2017 IEEE 26th Asian Test Symposium (ATS). IEEE, 2017.
    [48] Julliere, Michel. "Tunneling between ferromagnetic films." Physics letters A 54.3 (1975): 225-226.
    [49] Daughton, J. M. "Magnetoresistive memory technology." Thin Solid Films 216.1 (1992): 162-168.
    [50] Russo, Ugo, et al. "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices." IEEE Transactions on Electron Devices 56.2 (2009): 186-192.
    [51] Intel N: Intel News Release: STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes. Intel: Santa Clara, 2008.
    [52] Wire B: Samsung Electronics and Numonyx Join Forces on Phase Change Memory. San Francisco: Business Wire, 2009.
    [53] Yu, Shimeng. "Overview of resistive switching memory (RRAM) switching mechanism and device modeling." 2014 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2014.
    [54] Cheng-Han Lin, “Investigation of Oxide-Based Materials Applied to Resistive Random-Access Memory with Structure of Capacitor,” M.S. dissertation, NCKU, June 2018.
    [55] Valov, Ilia. "Redox‐based resistive switching memories (ReRAMs): Electrochemical systems at the atomic scale." ChemElectroChem 1.1 (2014): 26-36.
    [56] Pan, Feng, et al. "Recent progress in resistive random access memories: materials, switching mechanisms, and performance." Materials Science and Engineering: R: Reports 83 (2014): 1-59.
    [57] Chen, Jui-Yuan, et al. "Dynamic evolution of conducting nanofilament in resistive switching memories." Nano letters 13.8 (2013): 3671-3677.
    [58] Syu, Yong-En, et al. "Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOx/TiN Structure." IEEE Electron Device Letters 32.4 (2011): 545-547.
    [59] Russo, U., et al. "Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM." 2007 IEEE International Electron Devices Meeting. IEEE, 2007.
    [60] Russo, Ugo, et al. "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices." IEEE Transactions on Electron Devices 56.2 (2009): 193-200.
    [61] Zhang, Xinxin, et al. "Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation." Nanoscale Research Letters 15.1 (2020): 11.
    [62] Zhang, J-L., et al. "Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors." Solid-State Electronics 45.2 (2001): 373-377.
    [63] Yates, David E., Samuel Levine, and Thomas W. Healy. "Site-binding model of the electrical double layer at the oxide/water interface." Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases 70 (1974): 1807-1818.
    [64] Fung, Clifford D., Peter W. Cheung, and Wen H. Ko. "A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor." IEEE Transactions on Electron Devices 33.1 (1986): 8-18.
    [65] Batista, P. D., et al. "SnO2 extended gate field-effect transistor as pH sensor." Brazilian Journal of Physics 36.2A (2006): 478-481.
    [66] Chou, Jung-Chuan, and Yii-Fang Wang. "Preparation of the SnO2 Gate pH-Sensitive Ion Sensitive Field-Effect Transistor by the Sol–Gel Technology and Its Temperature Effect." Japanese journal of applied physics 41.10R (2002): 5941.
    [67] Chou, Jung-Chuan, Pik-Kwan Kwan, and Zhi-Jie Chen. "SnO2 separative structure extended gate H+-ion sensitive field effect transistor by the sol–gel technology and the readout circuit developed by source follower." Japanese journal of applied physics 42.11R (2003): 6790.
    [68] Chiang, Jung-Lung, Ying-Chung Chen, and Jung-Chuan Chou. "Simulation and experimental study of the pH-sensing property for AlN thin films." Japanese Journal of Applied Physics 40.10R (2001): 5900.
    [69] Wei-Ting Wu, “Investigation of Indium Titanium Zinc Oxide Thin Film Transistors Fabricated by RF Sputtering System and Their Optoelectronic Application,” Master D. thesis, NCKU, pp.13-22, Jan. 2017
    [70] Van der Ziel, Aldert, and Albert Van Der Ziel. Noise in solid state devices and circuits. Vol. 134. New York: Wiley, 1986.
    [71] Reynolds, D. C., et al. "Neutral-donor–bound-exciton complexes in ZnO crystals." Physical Review B 57.19 (1998): 12151.
    [72] Monroy, E., et al. "AlxGa1−xN: Si Schottky barrier photodiodes with fast response and high detectivity." Applied physics letters 73.15 (1998): 2146-2148.
    [73] Neamen, Donald A. Semiconductor physics and devices: basic principles. New York, NY: McGraw-Hill,, 2012.
    [74] Vossen, John L., Werner Kern, and Walter Kern, eds. Thin film processes II. Vol. 2. Gulf Professional Publishing, 1991.
    [75] Li-Yang Chang, “Investigation of Indium Gallium Oxide Thin Film Fabricated by RF Sputtering System and Their Applications,” Master D. thesis, NCKU, Jun. 2017.
    [76] Chang, C. Y. ULSI technology. McGraw-Hill, 1996.
    [77] Cha, J. H., Kim, K. H., Park, Y. S., Park, S. J., & Choi, H. W. (2009). Photoluminescence characteristics of nanocrystalline ZnGa2O4 phosphors obtained at different sintering temperatures. Molecular Crystals and Liquid Crystals, 499(1), 85-407.
    [78] Han, S., Zhang, Z., Zhang, J., Wang, L., Zheng, J., Zhao, H., ... & Shan, C. (2011). Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0. 52Zn0. 48O thin film. Applied Physics Letters, 99(24), 242105.
    [79] Matthew, Jim. "Surface analysis by Auger and x‐ray photoelectron spectroscopy. D. Briggs and JT Grant (eds). IMPublications, Chichester, UK and SurfaceSpectra, Manchester, UK, 2003. 900 pp., ISBN 1‐901019‐04‐7, 900 pp." Surface and Interface Analysis: An International Journal devoted to the development and application of techniques for the analysis of surfaces, interfaces and thin films 36.13 (2004): 1647-1647.
    [80] Kim, Gun Hee, et al. "Inkjet-printed InGaZnO thin film transistor." Thin solid films 517.14 (2009): 4007-4010.
    [81] Chen, M., et al. "Surface characterization of transparent conductive oxide Al-doped ZnO films." Journal of Crystal Growth 220.3 (2000): 254-262.
    [82] Chongsri, Krisana, et al. "Characterization and Photoresponse Propreties of Sn-doped ZnO Thin Films." Energy Procedia 34 (2013): 721-727.
    [83] Rakshit, Tamita, Indranil Manna, and Samit K. Ray. "Effect of SnO2 concentration on the tuning of optical and electrical properties of ZnO-SnO2 composite thin films." Journal of Applied Physics 117.2 (2015): 025704.
    [84] Inamdar, S. I., and K. Y. Rajpure. "High-performance metal–semiconductor–metal UV photodetector based on spray deposited ZnO thin films." Journal of alloys and compounds 595 (2014): 55-59.
    [85] Lee, C. B., et al. "Effects of metal electrodes on the resistive memory switching property of NiO thin films." Applied Physics Letters 93.4 (2008): 042115.
    [86] Lide, David R. "Standard thermodynamic properties of chemical substances." CRC handbook of Chemistry and Physics (1992).
    [87] Choudhury, B., et al. "Effect of oxygen vacancy and dopant concentration on the magnetic properties of high spin Co2+ doped TiO2 nanoparticles." Journal of Magnetism and Magnetic Materials 323.5 (2011): 440-446.
    [88] Yuan, Fang, et al. "A combined modulation of set current with reset voltage to achieve 2-bit/cell performance for filament-based RRAM." IEEE Journal of the Electron Devices Society 2.6 (2014): 154-157.
    [89] Waser, Rainer, et al. "Redox‐based resistive switching memories–nanoionic mechanisms, prospects, and challenges." Advanced materials 21.25-26 (2009): 2632-2663.
    [90] Wong, H-S. Philip, et al. "Metal–oxide RRAM." Proceedings of the IEEE 100.6 (2012): 1951-1970.
    [91] Chen, Y. S., et al. "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity." 2009 IEEE International Electron Devices Meeting (IEDM). IEEE, 2009.
    [92] Park, Jubong, et al. "Multibit Operation of TiOx-Based ReRAM by Schottky Barrier Height Engineering." IEEE Electron Device Letters 32.4 (2011): 476-478.
    [93] Cheng, Chun-Hu, Albert Chin, and F. S. Yeh. "Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM." IEEE electron device letters 32.3 (2011): 366-368.
    [94] Wang, Yan, et al. "Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications." Nanotechnology 21.4 (2009): 045202.
    [95] Wei-Kang Hsieh. “Investigation of Oxide-Based Materials Applied to Nonvolatile Memory Devices.” PH. D. dissertation, NCKU, p.101, June 2016.
    [96] Lee, Won-Ho, Eom-Ji Kim, and Sung-Min Yoon. "Multilevel resistive-change memory operation of Al-doped ZnO thin-film transistor." IEEE Electron Device Letters 37.8 (2016): 1014-1017.
    [97] Pham, Kim Ngoc, Cao Vinh Tran, and Bach Thang Phan. "TiO2 thin film based transparent flexible resistive switching random access memory." Advances in Natural Sciences: Nanoscience and Nanotechnology 7.1 (2016): 015017.
    [98] Jung, Seungjae, et al. "Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility." Microelectronic engineering 88.7 (2011): 1143-1147.
    [99] Kim, Sungho, et al. "Highly durable and flexible memory based on resistance switching." Solid-State Electronics 54.4 (2010): 392-396.
    [100] Kim, Myeongcheol, and Kyung Cheol Choi. "Transparent and flexible resistive random access memory based on Al2O3 film with multilayer electrodes." IEEE Transactions on Electron Devices 64.8 (2017): 3508-3510.
    [101] Won Seo, Jung, et al. "Transparent flexible resistive random access memory fabricated at room temperature." Applied Physics Letters 95.13 (2009): 133508.
    [102] Wang, Zhuo-Rui, et al. "Functionally complete Boolean logic in 1T1R resistive random access memory." IEEE Electron Device Letters 38.2 (2016): 179-182.

    下載圖示 校內:2025-07-20公開
    校外:2025-07-20公開
    QR CODE