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研究生： 葉志傑
Yeh, Chih-Chieh
論文名稱： 以液相沉積法在塑膠基板成長二氧化矽研製有機薄膜電晶體
Pentacene-Based Organic Thin Film Transistors on Plastic Substrate Coated with Liquid Phase Deposited SiO2
指導教授： 溫添進
Wen, Ten-Chin
王永和
Wang, Yeong-Her
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程研究所
Institute of Electro-Optical Science and Engineering
論文出版年： 2006
畢業學年度： 94
語文別： 英文
論文頁數： 84
中文關鍵詞： 電漿處理 、液相沉積二氧化矽 、伍環素 、有機薄膜電晶體 、塑膠基板
外文關鍵詞： organic thin film transistor, plasma treatment, pentacene, plastic substrate
相關次數： 點閱：153  下載：2 
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    • 本論文包含兩部分，第一部份乃為使用液相氧化物沉積法於塑膠成長二氧化矽薄膜，其目的為增加塑膠基板與後續元件製作之付著力與基板本身對光之穿透率以及對水氣之阻隔能力。吾人使用液相氧化物沉積法於經氧/氬電漿處理之PES塑膠基板。由XPS頻譜分析可知，經電漿處理後基板表面COO(288.9eV)鍵結對CH2(284.5eV)鍵結之強度比例明顯提高。而在後續乃使用掃描式電子顯微鏡和經稀釋後之氫氟酸對氧化薄膜之蝕刻速率以及表面漏電流來檢視液相氧物薄膜品質。於第二部份，吾人介紹有機薄膜電晶體之製作。於實驗中，發現使用五環素之厚度為67奈米可獲得較高之電流值，以及使用鉑為汲極與源極之電極金屬可有較低之載子注入位障。為降低主動式有機電激發光二極體製作光罩數，吾人使用導電性銦錫氧化物為用以驅動有機電激發光二極體之電晶體閘極金屬。然而於元件轉換特性中，發現使用導電性銦錫氧化物為閘極電極將使原件之遲滯現象更為惡化。而於導電性銦錫氧化物之上蒸鍍鋰化氟分子將有助於該現象之改善。

    This thesis includes two parts. The first part deals with the oxide layer coating on the PES substrate for the enhancement of adhesion, optical transmittance, and water vapor impermeability. The liquid phase deposition method to grow the silicon dioxide interlayer on the plastic substrates with the O2/Ar plasma pre-treatment is investigated. It is found that the ratio of COO (288.9eV) to CH2 (284.5eV) has increased with the O2/Ar plasma pre-treatment by the X-ray photoelectron spectroscopy measurement. After which, the quality of LPD-SiO2 films on the substrates with or without the plasma pre-treatment is examined by using scanning electron microscopy, etching rate of the oxide layer by the diluted HF solution, and surface leakage current measurement. In the second part, we show the organic thin film fabrication. The optimal thickness of pentacene is found to be about 67 nm. A smaller injection barrier can be obtained by using Pt as a drain and source contact electrode. In order to reduce one mask process of the AM-OLED device, we use ITO as the gate metal instead of Al. However, from the transfer characteristic, the worse hysteresis effect can be observed. A thin LiF layer is deposited onto the ITO surface to reduce ITO surface work function. After that, the ratio for off state current can be reduced about two orders.

    Abstract I Acknowledgements III Contents IV Listof Tables VII List of Figures VIII 1 Introduction 1 1.1 Motivation 1 1.2 Organization 2 2 Functional dielectric layer coating on the plastic substrates by LPD-SiO2 4 2.1 Introduction 4 2.2 Surface modification of plastic substrates 5 2.2.1 Methods of surface modification for plastic substrates 5 2.2.2 Plasma treatment on the plastic substrates 7 2.2.3 Plasma effect on the plastic substrates 8 2.3 LPD–SiO2 system 9 2.3.1 Introduction 9 2.3.2 LPD process and deposition rate 10 2.3.3 Chemical property 12 2.3.3.1 Fourier Transform Infrared spectroscopy 12 2.3.3.2 Energy Dispersive Spectrometer 13 2.3.3.3 ESCA spectra 14 2.4 Effects of Plasma Pre-treatment on LPD-SiO2 14 2.5 Application of LPD-SiO2 on the PES substrate 15 2.5.1 Water Vapor Permeability 16 2.5.2 Optical application 17 2.5.2.1 Bi-layers growth in the LPD system 17 2.5.2.2 Uniformity issue of the vertical growth system 18 2.5.3 The substrate for organic thin film transistor fabrication 19 2.6 Summary 20 3 Organic thin film transistor fabrication for AMOLED 21 3.1 Introduction 21 3.2 Operation principle and pixel structure 22 3.2.1 Material conduction mechanisms 22 3.2.1.1 Inorganic semiconductor conducting mechanisms 22 3.2.1.2 Organic semiconductor conducting mechanisms 23 3.2.2 Transistor structure and operation principles 24 3.2.2.1 Transistor structure 24 3.2.2.2 Transistor operation principle 26 3.2.3 Pixel structure 27 3.3 Transistor fabrication 27 3.4 Transistor current- voltage characteristic 29 3.4.1 I-V characteristic for different fabrication parameters 29 3.4.2 I-V characteristic of the Al gate and ITO gate 30 3.5 Modification of the ITO surface 32 3.5.1 Effect of LiF on the metal surface 32 3.5.2 Device characteristic of the LiF modified ITO gate 33 3.6 Other device fabrication issues 34 3.6.1 Reduction of the dielectric layer thickness 35 3.6.2 High K dielectric layer 36 3.7 Summary 37 4 Conclusions 38 5 Future work 39 References 40 Tables 46 Figures 49

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