本研究以磁控濺渡法製備催化劑，以期成長高密度之氣相成長碳纖維(VGCF)，並針對Fe催化劑在矽、石英及碳/碳複合材料基板上不同表現，而了解其生長之要素。研究中也改變了其他參數:催化劑厚度、熱處理時間、氣體濃度及反應時間，用來找出使用濺渡催化劑法生長VGCF之最佳要素。另一部份則探討添加奈米氧化鋁粉末對生長VGCF之影響。在微結構分析上以掃瞄式電子顯微鏡(SEM)、X光繞射儀(X-Ray)、光電子能譜儀(XPS)及穿透式電子顯微鏡(TEM)，對其催化劑或VGCF檢測其形貌、結構與化學特質。
由實驗結果得知使用磁控濺渡法能得到相當緻密之催化劑，而在高溫熱處理後，此薄膜會成核成長為顆粒，經由XRD分析得知其結構為Fe3O4，接著再靠著甲烷的裂解、沉積與擴散，進而催化成長VGCF，在基板成長VGCF的密度表現上，以矽為最佳，能夠生長出濃密的VGCF墊片，而以碳/碳複合材料為最差。其他控制成長參數，如催化劑厚度及反應時間等則能對VGCF之直徑造成影響。最後添加奈米氧化鋁粉於碳/碳複合材料中能有效之提升VGCF之產率，推估是由於氧化鋁粉末能有效分散催化劑，而使得在生長VGCF有較好的表現。

In order to obtain vapor-grown carbon fibers(VGCFs) by the sputtering catalyst method, experimental and analytical examinations were carried out. Using Fe as catalyst, under several experimental parameters, such as substrate types (Silicon, C/C composite, and quartz), rough surface of substrate, and catalyst thick. After heat treatment, catalyst on substrate become particles, and it shows Fe3O4 structure by XRD analysis, the density of catalyst particles dispersion shows low on C/C substrate since the porous surface. After growth, it shows high quantity carbon fibers on Silicon substrate but low quantity on C/C composite substrate. Obtained carbon fibers exhibited different diameters with different catalyst thick. By addition aluminium oxide nanopowder can make catalyst dispersion well on C/C substrate, and increase VGCFs density.

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