本研究主要在於以修飾層加入有機薄膜電晶體，使得電晶體的電性表現有明顯的改善。而以下針對高分子及小分子電晶體所加入的修飾層所做的改善來做說明：
首先我們以PANI-CSA為主要的有機半導體層並以PEI為高分子電解質修飾層，來形成複合式高分子層來做為通道，以達成空乏型電晶體特性表現。實驗發現，若沒有PEI的加入，則PANI-CSA電晶體表現有如一個電阻，完全沒有電晶體特性。若有PEI電解質的加入，則元件則表現就空乏型電晶體的電性特徵。這是由於在閘極電場作用力下，PEI中的銨根離子能夠坎入高分子PANI-CSA主動層，使得主動層的硫酸根離子被迫和銨根離子做結合，進而達到介面修飾的目的，並因而調變電流。但PANI-CSA空乏型電晶體是屬於p型電晶體，為了能更進一步將有機薄膜電晶體應用到互補金屬氧化物半導體(Complementary Metal Oxide Semiconductor) (CMOS)，我們另外研發了另外一種雙極性電晶體。其原理是利用離子的幫助來達成電化學摻雜的方式並以修飾層來修飾主動層和絕緣層間的介面性質，可以使得polyaniline-poly (styrene sulfonic acid) (PANI-PSS)電晶體能夠展現出雙極性的電晶體特性。和沒有用介面修飾層的PANI-PSS電晶體相比，其電洞遷移率 (hole mobility)可以從0.65 增加到 3.36 cm2/ Vs且 電子遷移率 (electron mobility) 也有1.19cm2/Vs的水平。 但在電晶體在量測過程中，常有發生電流直接達到儀器上限的現象，經查驗數據後，其限流發生的原因為漏電流所致。也就是說，其元件的不穏定是由於絕緣層的的絕緣效果不穩定所導致。在我們用掃描電子顯微鏡（scanning electron microscope）(SEM) 去觀察所旋塗的高分子絕緣層後發現，有不規則的裂隙及一些表面破碎現象會在絕緣層表面發生。我們推測這是在加熱處理的過程中，雖然未交聯的高分子絕緣層能夠因溫度而產生交聯加強了絕緣層的強度，但也因加熱使得高分子和基板的熱膨脹係數不同而有熱應力產生，並產生了表面破碎及裂隙的現象。為了試著去改善絕緣層品質，我們以五環素(pentacene)小分子有機半導體為主動層，並以雙層（未交聯／交聯）的複合結構來取代單層絕緣層，一方面可以強化絕緣層的絕緣能力，另一方則將上層未交聯的絕緣層來當作表面修飾層改善元件特性。實驗結果顯示，在用了雙層絕緣層的結構後，用SEM去觀察絕緣層表面，因上層絕緣層修補的效果，表面幾乎找不到裂隙，這也許可以說明為什麼雙層結構的漏電流特性會比單層的絕緣層好上10倍以上。並且上層未交聯的絕緣層提供較低的表面能，使得五環素(pentacene)薄膜有較好的表面型態及較大的結晶區域，並得到電性較好及較為穏定的電晶體特性。
針對改善元件特性部分，除了改善絕緣層的電性外，還有比較常用的二種方式分別為增進載子從源／汲極注入的效率及改善主動層薄膜成長的品質。對於進載子從源／汲極注入的效率方面，我們提出以極薄的碳六十層來修飾銦鍚氧化物(ITO) 源/汲電極(source/drain　electrode)和五環素的介面，其目的除了能夠製作出透明電晶體外，還可以有效增進透明電晶體的遷移率約四倍。實驗結果証實，碳六十層的加入可以有效的修飾ITO電極的表面功函數(workfuction)，使得ITO表面功函數從原本的4.77eV，可以調變到5.15eV。經由選用適當的C60厚度，我們可以大幅度的降低源/汲電極和主動層間的接面能障，進而增加載子的注入效率。實驗也發現，即使加入了3.5奈米厚度的碳六十層，元件在可見光範圍的穿透率仍有62.98%的效率，以透明電晶體來說，是足夠了。而對於改善主動層五環素薄膜品質而言，我們在五環素層間穿插了極薄的碳六十修飾層，而加入的目的是要使得較低厚的五環素層能有比較平坦的表面，這可以使得接下來的五環素分子能有機會再以比較小的傾斜角（分子跟垂直基板的角度）成膜在基板上，造成比較好的主動層品質。也就是說，極薄的碳六十修飾層的加入，可以延遲相轉變的發生厚度，使得五環素主動層的薄膜結構能夠盡量一致且均勻，進而改善了主動層的結晶度及五環素分子間的交互作用力，因而改善元件的載子遷移率達六倍之多。

In this study, research on application of modification layer in both conjugated polymer and small molecule in organic thin film transistors was presented. For the polymer-based OTFTs, a depletion-mode polymer transistor with the composite channel structure consisting of polymer electrolyte poly(ethyleneimine) (PEI) modification layer and active material polyaniline-camphor sulfonic acid (PANI-CSA) was proposed. From the experimental results observed, the PANI-CSA device without the electrolyte PEI exhibits a resistor behavior. With the insertion of the PEI electrolyte layer between poly-4-vinylphenol (PVP) polymer dielectric and PANI-CSA, the device behaves as a transistor working in depletion mode. This is due to the NH3+ cations of PEI stuffed into PANI-CSA to compensate the SO3- anions of PANI-CSA, thereby resulting in dedoping process and current modulation by applying gate voltage. However, PANI-CSA OTFTs only exhibit p-type transistor behavior. To further simplify the design of organic complementary metal oxide semiconductor (CMOS) integrated circuit, the ambipolar transistor through the ion-assisted electrochemical doping mechanism and poly(vinyl alcohol) (PVA) surface modification layer was proposed. With PVA modification layer, the OTFT with polyaniline-poly (styrene sulfonic acid) (PANI-PSS) as active layer exhibit the obvious ambipolar transistor characteristics. The hole and electron mobility of PANI-PSS OTFTs is 3.36 and 1.19 cm2/Vs respectively. Although the polymer-based OTFTs have been demonstrated, the electrical characteristic is not always stable during the device operation. Sometimes, the devices show the undesired output characteristic or even breakdown directly. After tracing the data obtained from the instrument, we find the unstable characteristics or breakdown phenomenon result from the high leakage current due to the unreliable insulator property. From the scanning electron microscope (SEM) results, some cracks and valleys existed on the surface of PVP dielectric. To solve this problem, dual-layer non-cross-linked PVP (NCPVP)/cross-linked PVP (CPVP) dielectrics structure was applied to small molecule pentacene-based OTFTs. The NCPVP/CPCP specific structure could not only strengthen the polymer insulator property but also modify the surface energy to facilitate the deposition of pentacene film. The experimental results suggest that the leakage current of the device with dual-layer NCPVP/CPVP dielectrics can be improved at least one order magnitude smaller than that with a single-layer CPVP, which may be ascribed to the reduction of cracks and valleys generated during the thermal treatment process. Besides, the lower surface energy on the surface of dual-layer polymer dielectrics results in better pentacene film morphology and larger crystalline size, contributing to better output characteristics and more stable properties of OTFTs. Another two effective ways to improve device performance are also presented. One is to enhance the injection efficiency from source/drain to active layer; another is to improve active film quality. In the former, ITO/C60 source/drain contact applied in transparent organic thin-film transistors could resulting in the increased mobility by more than four times as compare to the device with ITO electrode only. The experimental results suggest the introduction of C60 layer could modify the work function of ITO, contributing to the barrier lowering of the S/D contacts. Even after the introduction of the 3.5nm-thick C60 layer, the average transmittance of the device in the visible region could remain at 62.98%. In the latter, sandwich structure pentacene/C60/pentacene was applied in the active channel layer. The introduction of ultra-thin C60 modification layer could smooth the surface on the lower pentacene film, facilitating the deposition of pentacene molecules in a smaller tilt angle (the angle between pentacene molecule and normal vector of the substrate). This will delay phase transformation in pentacene film and result in the higher order active film structure, contributing to the stronger intermolecular coupling and, therefore, to improved device performance by more than six times.

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