本論文分兩部分，第一部分主要探討以NiO Sol-Gel退火作為電洞傳輸層，並濺鍍氧化鋅作為電子傳輸層，應用於鈣鈦礦太陽能電池之研究；第二部分主要以鎳金薄膜摻雜銅退火氧化作為透明導電層與電洞傳輸層，藉由摻雜改變其電性，最後應用於鈣鈦礦太陽能電池。
第一部分改變塗佈NiO時轉速與退火溫度，並以甲基胺碘化鉛製備鈣鈦礦結構的主動層，透過元件製作了解不同參數對太陽能元件所產生的影響以及物理意義，最後以最佳條件下堆疊ZnO薄膜，致力於製造P型與N型無機化結構，使太陽能電池在長時間下有穩定輸出之效率。
第二部分蒸鍍不同厚度之金薄膜與銅箔膜，並以高溫退火下，探討其穿透率在摻雜銅與本身鎳金薄膜之差異，並藉由SKPM量測其功函數，以及藉由四點探針量測其電阻值，加以佐證摻雜銅能使鎳金薄膜阻改變其電性，最後使用甲基胺碘化鉛作為元件主動層，透過元件製作了解改變不同厚度對其太陽能元件所產生之影響及物理意義。

The paper first describes the NiOx film properties, the final two parts explore different applications. With the first part focuses on using annealed NiOx Sol-Gel thin film as a hole transport layer, and sputtering zinc oxide as an electron transport layer is applied to the study of the perovskite solar cells. Second part copper doped Ni/Au thin film as the transparent conductive layer and the hole transport layer, to change its electrical properties by doping, and finally applied the perovskite solar cells.
The first part of the changes spin coating NiOx solution speed, annealing temperature, and the methylamine lead iodide as an active layer of perovskite structure. Through the production of components understand the different parameters affecting the physical meaning of solar cells. Finally, under optimum conditions of stacked ZnO film producted P-type and N-type inorganic structure. The solar cells efficiency output stability in a long time.
The second part of the gold and copper deposition of different thickness, and high temperature annealing to discuss penetration in copper doped with nickel-gold film of difference itself. To measure work function by SKPM as well as by four-point probe measuring the resistance value. With the above mentioned can prove copper-doped nickel gold thin changes its electrical properties.
Finally, we investigate the copper film causes hysteresis, and the forward backward scan is mismatch. SEM can demonstrate the impact caused by the grain boundaries.

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