本研究探討在溫度1050℃-1100℃及Ar氣氛下，Si基板上SiO2層的生成及CuO粉末的添加對以熱碳還原GeO2粉生長Ge-Si1-xGexOy及GeO2-Si1-xGexOy核-殼奈米線(底下以奈米線稱之)的影響。無添加CuO粉末時，僅在SiO2/Si基板上生成Ge-Si1-xGexOy奈米線，於Si基板上並無奈米線生成。當添加CuO粉末時，可促進Ge-Si1-xGexOy及GeO2-Si1-xGexOy奈米線在Si基板生長及GeO2-Si1-xGexOy奈米線在SiO2/Si基板生長。這些奈米線是經由VS生長機制生長。目前結果顯示，Si基板的氧化對以熱碳還原GeO2粉末生長Ge-Si1-xGexOy及GeO2-Si1-xGexOy的成長扮演著重要角色。在此探討Si及SiO2基板上，在 Si1-xGexOy奈米線核心生長Ge或GeO2結晶的機制。
另外，在溫度1100℃以熱碳還原GeO2/CuO粉末，於Si基板上除了Ge-Si1-xGexOy及GeO2-Si1-xGexOy奈米線生成外，還有繩狀奈米線、中空管及鏈條線形成，其化學組成為Si、Ge及O。中空管(tube)及鏈條線也是由許多Si1-xGexOy奈米線組成。繩狀奈米線、中空管及鏈條線的生長是以CuSiGe和SiGe催化的VLS機制控制，其中Ge、Si及Cu是由氣相提供。對於中空管及鏈條線其Si1-xGexOy奈米線是在液滴下半球表面成核成長，成核點不包含下球面的中心區域，所以當Si1-xGexOy奈米線不斷的生長時，液滴被抬起往上移動，形成管狀結構。
鏈條線其直徑粗細呈現週期性的變化，生長過程可以根據反饋機制(feedback mechanism)的週期性不穩性來解釋。隨著鏈條線的成長，最後會轉變成為中空管。對較大直徑的線，其週期不穩定性的消失，可歸因於Gibbs-Thomson效應使得在氣-液界面的氣相過飽和度減少。在本研究中所生長之中空管，可以歸類為擁有較大波長的鏈條線。

The effects of a grown SiO2 layer on the Si substrate and the CuO additive in GeO2 powders on the enhanced growth of Ge-Si1-xGexOy and GeO2-Si1-xGexOy core-shell nanowires via carbothermal reduction at 1050-1100℃ in flowing Ar were studied. Without adding CuO into GeO2 powders only Ge-Si1-xGexOy nanowires were grown on the SiO2/Si substrate, while no nanowires could be grown on the Si substrate. Adding CuO into GeO2 powders enhanced the growth of GeO2-Si1-xGexOy and Ge-Si1-xGexOy nanowires on the Si substrate as well as that of GeO2-Si1-xGexOy nanowires on the SiO2/Si substrate. The growth of nanowires follows the vapor-solid process. The present studies reveal that the oxidation of the Si substrate plays an important role in enhancing the growth of Ge-Si1-xGexOy and GeO2-Si1-xGexOy nanowires via carbothermal reduction of GeO2 powders. The mechanisms for precipitation of Ge and GeO2 cores in the Si1-xGexOy nanowires on Si and SiO2 substrates are discussed, respectively.
Upon carbothermal reduction of GeO2/CuO powders at 1100℃, not only the Ge-Si1-xGexOy and GeO2-Si1-xGexOy nanowires but also the cord-like nanowires, tubes, and chain-like wires with the chemical compositions of Si, Ge, and O were grown on the Si substrate. The tubes and chain-like wires are also composed of many Si1-xGexOy nanowires. The growth of cord-like nanowires, tubes, and chain-like wires is govern by the CuSiGe- and SiGe-catalyzed vapor-liquid-solid mechanisms, where Ge, Si, and Cu are fed from the vapor phase. For the tubes and chain-like wires the nucleation and growth of Si1-xGexOy nanowires occur on the lower surface of the droplet except the central region. As growth continues the nanowires exert a force to lift the droplet upward, forming a tubular structure.
The diameters of the chain-like wires are periodically modulated. Their growth may be explained in terms of the periodic instability using the feedback mechanism. As the chain-like wire grows up, it can eventually grow into a microtube without periodic instability. The suppression of the periodic instability for the wires with larger diameter may be attributed to the decrease of the vapor supersaturation at the vapor-liquid interface due to the Gibbs-Thomson effect. In the present study, the tube can be specified as the chain-like wire with a very large wavelength.

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