中文摘要
本論文主要分為兩大研究主題，第一個主題為以化學氣相沈積(CVD)法低溫成長一維氧化鋅奈米結構。第二個部份是以化學氣相沈積法成長一維鐵磁性Zn1-xCoxO奈米柱。

第一部份:
本研究採用Zn(C5H7O2)2為先驅物，以化學氣相沈積法，在500oC爐管中於fused-silica、Si(100)、sapphire 與sapphire(0001)基板上成長氧化鋅奈米柱。經掃描式電子顯微鏡(SEM)觀察下可發現，除了sapphire(0001)基板外，皆呈現出高密度與高方向性的奈米柱。粉末繞射(XRD)分析得知氧化鋅奈米柱為wurtzite結構，且具有沿著結晶c軸成長的優勢。穿透式電子顯微鏡(TEM)分析得知氧化鋅奈米柱與sapphire(110)基板為磊晶成長，且磊晶關係為ZnO[0001]//sapphire[110]與ZnO[110]// sapphire[0001]。而成長在Si(100)基板的奈米柱則有一層約3nm厚的SiOx層。光激發光譜(Photoluminescence，PL)中發現於3.2eV處有一個強的紫外光放射峰。由光激發光譜光譜與拉曼光譜分析得知氧化鋅奈米柱中氧空缺濃度很低。 此外由氧化鋅奈米柱的angle-dependent X光吸收光譜(x-ray absorption spectroscopy, XAS)與掃描式光電子顯微能譜(scanning photoelectron microscopy, SPEM)分析，可得知奈米柱的尖端最表面應為氧離子，且奈米柱之成長方向為[000-1 ]。
本研究亦藉由將Zn(C5H7O2)2熱裂解的方式成長出一維Zn-ZnO同軸奈米電纜與氧化鋅奈米管。經穿透式電子顯微鏡觀察發現核心部位的鋅與氧化鋅外批覆層具有磊晶關係，且成長方向皆為(0001)。而氧化鋅奈米管的厚度約為4nm，為單晶，屬於Zn-ZnO同軸異質結構中外層的延伸。推測其成長機制為經由高溫將Zn-ZnO同軸異質結構中之鋅元素揮發而形成氧化鋅奈米管。

第二部份:
本實驗以熱化學氣相沈積(thermal CVD)的方法將鈷元素掺入所成長的氧化鋅奈米柱中形成稀釋型磁性半導體，且居禮溫度可高於350K。經結構分析發現所成長的Zn1-xCoxO奈米柱為單晶之wurtzite結構，並無其它相析出。經紫外-可見光(uv-vis)吸收光譜分析得知該Zn1-xCoxO與氧化鋅奈米柱相似，於可見光下呈現透明。由Zn1-xCoxO奈米柱之延伸X光吸收精細結構(EXAFS)分析發現並無氧化鈷(CoO)與鈷結晶相析出，顯示於Zn1-xCoxO奈米柱中鈷原子有系統的取代了鋅原子的位置。

Abstract
Two main research subjects are presented in this thesis. Part I is “Low temperature growth of ZnO nanostructures by chemical vapor deposition”. Part II is “Growth of well-aligned ferromagnetic Zn1-xCoxO nanorods by thermal CVD”.

Part I.
Highly oriented ZnO nanorods have been grown on various substrates, such as fused silica, Si(100), sapphire(110), and sapphire(0001) using a simple catalyst-free CVD method at 500oC in furnace. SEM images indicat that high density and well-aligned ZnO nanorods were grown on fused silica, Si(100) and sapphire(110). XRD diffraction shows that the ZnO nanorods are wurtzite structure and are preferentially oriented in c-axis. TEM analyses indicate that epitaxial ZnO nanorods have been grown on sapphire(110) with the ZnO/sapphire orientational relationship[0001]//[110] and [110]//[0001]. In the case of the Si(100) substrate, an amorphous SiOx interfacial layer exists between ZnO nanorods and Si(100). The well-aligned ZnO nanorods on fused silica substrates exhibit a strong UV emission and absorption at around 386 nm under room temperature. Photoluminescence and Raman spectra indicate that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanorods. Diameter control of the well-oriented and high-quality ZnO nanorods is achievable by variation of the growth conditions. Angle-dependent x-ray absorption and scanning photoelectron microscopy measurements suggest that the tip surfaces of the highly aligned ZnO nanorods are terminated by O ions and the nanorods are oriented in the [000-1] direction.
The heterostructures of Zn–ZnO coaxial nanocables and ZnO nanotubes with an average diameter of 30 nm have been synthesized by simple pyrolysis of zinc acetylacetonate. High-resolution transmission electron microscopy analyses reveal that the Zn core and the ZnO sheath of the nanocables have an epitaxial relationship with their longitudinal axis oriented along the <001> direction. ZnO nanotubes with a wall thickness of 4 nm possess a single-crystal structure and appear to be the extension of the ZnO sheath of the coaxial nanocables. It is suggested that the ZnO nanotubes are formed by partial evaporation of Zn core of the Zn–ZnO coaxial nanocables.

Part II.
Diluted magnetic semiconductor Zn1-xCoxO nanorods with a Curie temperature higher than 350 K have been synthesized by in-situ doping of Co in ZnO nanorods using a simple thermal chemical vapor deposition method. Structural analyses indicated that the nanorod possesses the single-crystalline wurtzite structure and there is no segregated cluster of impurity phase appearing throughout the nanorod. The transparence of the Zn1-xCoxO nanorods in the visible region has been examined by UV-visible absorption. The fundamental absorptions of the Zn1-xCoxO nanorods estimated from the absorption spectra do not reveal pronounced difference from that of pure ZnO nanorods.

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