本論文使用漿料轉移技術(噴墨機與點膠機），並配合熱輔助光還原法圖案化垂直成長的銀奈米線叢。圖案化的優點在於可以選擇適當區域成長奈米線叢，並於目標區域形成銀導線通路。
圖案化方式可以分成三種。第一種方式為利用噴墨硝酸銀於二氧化鈦薄膜以進行還原反應成長銀奈米線叢，其中液滴大小可用來定義圖形尺寸。此製程方式雖然可以在二氧化鈦上成長出21.5±5.5/100μm2線密度之奈米銀線，但由於硝酸銀液滴會在二氧化鈦層中擴散，使預期成長出的奈米線叢線寬(dot size)擴大(>500μm)；第二、三種方式利用點膠機轉移二氧化鈦陣列，並分別以微量滴(pipette)與噴墨機轉移硝酸銀。其中以微量滴管轉移硝酸銀的方式雖然可得到最高的線密度43±3/100μm2，但奈米線叢無法均勻的在二氧化鈦陣列上成長，亦無法圖案化銀奈米線叢；而第三種方式結合點膠機與噴墨機轉移漿料，可以成功製備出線密度20.7±1.7/100μm2之圖案化奈米叢陣列，且縮小線寬至158±21μm。
本論文亦探討熱輔助光還原製程中各製程參數對圖案化銀奈米線叢的影響。當二氧化鈦上有過多的成核點時(剛照完UV光時)，並不利於銀線叢生長，僅在二氧化鈦上有局部累積光電子時，才可以使晶體成長為一維結構，成長為奈米線叢。此外，當熱處理的溫度過高時，由於提供給原子的動能過高，會促使銀原子藉由表面擴散進行重新排列，不利於一維晶體的成長。
圖案化後的銀奈米線叢亦進行接合與研究。在10MPa、300oC的參數下進行熱壓時，接點的接觸電阻約為0.01~0.04Ω；而當壓力下降至5 MPa，接點的接觸電阻上升至0.22~0.38Ω。在量測接觸面積後，得到的最佳特徵接觸電阻為2.67*10-6 Ω-cm2。

In this study, free-standing silver nanowires are fabricated by Thermally Assisted Photoreduction. This method has the advantage of yielding nanowires without additional assistance of surfactants, templates, or seeding. Three different patterning methods are introduced in this context. The first method uses inkjet printing to pattern silver nitrate droplets on spin-coated TiO2 film. The second method uses a needle-type dispenser to prepare a TiO2 array (of 100μm in diameter). Then the silver nitrate solution is transferred by pipette or immersion bath. The third method uses inkjet printer to transfer silver nitrate droplets on TiO2 arrays. Silver nanolawn (nanowires in a localized area) was downsized to 158±21μm with nanowire density of ~20.7±1.7/100μm2 in this study, which makes the applications of nanolawn more widely, such as flip-chip interconnects. Variations of patterned silver nanolawn is discussed according to different amount of charge carriers on surface and different heat treatments. When having less carriers on the surface, nanowires can grow denser from 14.5±1.5 to 26.5±1.5 (/100μm2). With lower heat treatment temperature, nanolawn can be downsized from 1078.7±41.2μm to 158±21μm. Silver nanolawn interconnects were fabricated under two bonding forces, 10 MPa and 5 MPa, at 250oC for 30 min. The specific contact resistances of interconnects turned out ~10-6 Ω-cm2. Our procedure achieved the commercial standard of making anisotropic conductive film.

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