在尺寸微小的半導體製程，各大研究單位都在鑽研各式各樣的奈米級內連線、薄膜，因其特殊的物理性質和成長反應，是相當重要的研究。本研究主要以化學氣相沉積法(CVD)，考量在相同環境下，微調實驗參數，以相同的前驅物分別搭配矽基板和蝕刻好的矽奈米線，成功觀測到不一樣的反應機制，並以SEM觀測其形貌，再以材料分析手法使用EDS、XRD、TEM和物理性質多方佐證，總計共成長出Ni3Si、Ni31Si12、Ni2Si、NiSi奈米線相，結論出兩種反應機制Vapor-Solid(VS)和Diffusion-Induced。最後選取比較適合量測的物理性質，場發射量測測得Ni31Si12的β為5923以及起始電場為1.6V/μm，Ni2Si的β為4918以及起始電場為3.4V/μm，NiSi的β為3301以及起始電場為4.6V/μm。磁性質則驗證出Ni2Si和NiSi奈米線相的差異，在低溫(2K)下，Ni2Si的矯頑磁場為268Oe，而NiSi的矯頑磁場則為115Oe；在300K下，Ni2Si的矯頑磁場為162Oe，而NiSi的矯頑磁場則為48Oe，顯示出NiSi的相對軟磁性，此外藉由零場冷ZFC更觀測到奈米鐵磁性(Ferromagnetic)結構類似超順磁性質(Superparamagnetism)Ni2Si的blocking temperature(TB)的出現。電性量測則以直接接觸法量測直徑20nm以及長3μm的NiSi奈米線，計算出其電阻率(resistivity)ρ=23.

Nickel silicide nanowire plays a significant role in study of contact material owing to the well-behaved physical properties and compatibility in silicide technology. Herein, we present two different CVD silicidation paths of same NiCl2 precursor to synthesize single-crystalline NiSi nanowire. By changing substrate structure with wet chemical etching process, the interesting change of growing mechanism has been observed. Characterization of NiSi nanowire were examined by SEM, XRD,TEM in sequence and certification of its phase were carried out by HR-TEM, TEM-EDS, FFTs, SAED demonstrated a single-crystalline NiSi orthorhombic structure. Magnetic property measurements show that NiSi nanowire performed a soft-ferromagnetic, and field emission property measurements show remarkable field enhancement factor 3301.

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