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研究生： 陳韋憲
Chen, Wei-Shian
論文名稱： 雷射干涉微影術製作T型閘極氮化鋁鎵/氮化鎵金氧半高電子遷移率場效電晶體之研究
Investigation of T-Shaped Gate AlGaN/GaN Metal-Oxide Semiconductor High-Electron-Mobility Transistors Fabricated Using Laser Interference Photolithography Method
指導教授： 李清庭
Lee, Ching-Ting
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2016
畢業學年度： 104
語文別： 中文
論文頁數： 80
中文關鍵詞： 氮化鋁鎵/氮化鎵 、光電化學法 、聚酸鉀酯 、T型閘極之金氧半高電子遷移率場效電晶體
外文關鍵詞： AlGaN/GaN, Photoelectrochemical, PMMA, T-gate HEMTs
相關次數： 點閱：90  下載：0 
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    • 本研究T型閘極高電子遷移率場效電晶體將由多重閘極高電子遷移率場效電晶體搭配聚酸鉀酯完成製作，聚酸鉀酯旋轉塗佈於多重閘極線寬中作為元件暫時支撐層，經由高溫加熱使聚酸鉀酯蒸發形成T型閘極懸空結構，達到最低空氣介電質(ε=1)以減少T型閘極頂部引起的寄生電容。
    多重閘極結構與單閘極結構比較上，IDSS在VGS為4 V及VDS為6 V下由492.3 mA/mm提升到623.8 mA/mm，在VDS為6 V時"g" _"m(max)" 由97.3 mS/mm提升到118.2 mS/mm，改善原因為雷射干涉微影技術定義出閘極線寬為0.8 μm，且有效縮短閘源極距離，使通道電場增強以提升元件特性，在多重閘極結構下減少閘極表面載子注入，使閘極漏電流由7.58×10-6 A 減少至9.72×〖10〗^(-7) A，電流增益截止頻率由7.6 GHz提升到10.8 GHz，最大震盪頻率由11.4 GHz提升到15.8 GHz。
    T型閘極之高電子遷移率場效電晶體之IDSS在VGS為4 V及VDS為6 V下達到624.1 mA/mm，在VDS為6 V時"g" _"m(max)" 達到118.4 mS/mm，然而T型閘極結構有效改善閘極邊緣峰值電場，使閘極漏電流由9.72×10-7 A 減少至7.32×10-7 A以及崩潰電壓大幅提升，在電流增益截止頻率為10.8 GHz，T型閘極結構使閘極電阻明顯減少，因此最大震盪頻率由15.8 GHz提升至27.4 GHz。

    In this research, High performance GaN-based T-gate structured met-al-oxide-semiconductor high-electron-mobility transistors (T-gate MOS-HEMTs) with multiple-gate structure and polymethylmethacrylate (PMMA) were fabricated. The drain-source current (IDS) of the single-gate and T-gate MOS-HEMTs at the drain-source voltage (VDS) of 6 V and gate-source voltage (VGS) of 4 V were 492.3 mA/mm and 624.1 mA/mm, respectively. Their corresponding maximum extrinsic transconductance values were 97.3 mS/mm and 118.4 mS/mm, respectively. Due to the improvement in the gate length and the gate resistance, the current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) of the T-gate MOS-HEMTs were promoted to 10.8 GHz and 27.4 GHz, respectively.

    摘要....................................................I Abstract..............................................III 致謝.................................................VIII 目錄....................................................X 表目錄................................................XIV 圖目錄.................................................XV 第一章 簡介............................................1 1.1 氮化鋁鎵/氮化鎵高速電子遷移率電晶體................1 1.2 研究動機........................................2 1.3 論文架構........................................4 參考文獻................................................7 第二章 原理與文獻回顧..................................10 2.1 氮化鋁鎵/氮化鎵異質結構..........................10 2.1.1 氮化鋁鎵/氮化鎵異質結構之成長.....................10 2.1.2 二維電子氣(2DEG)之特性...........................11 2.2 氮化鋁鎵蝕刻原理.................................11 2.2.1 光電化學(Photoelectrochemical; PEC)氧化法.......11 2.3 T型閘極發展現況及各製備方法.......................13 2.3.1 T型閘極發展現況.................................13 2.3.2 各方法製備T型閘極結構............................13 2.4 高頻量測下之S參數...............................15 2.4.1 電流增益截止頻率(Current gain cut-off frequency, fT)....................................................16 2.4.2 最大震盪頻率(Maximum oscillation frequency, fmax)..................................................18 2.5 崩潰電壓(Breakdown Voltage).....................19 參考文獻................................................26 第三章 元件製程及量測儀器...............................33 3.1 試片結構........................................33 3.2 元件製作流程....................................33 3.2.1 高台隔離製作(Mesa isolation)....................33 3.2.2 硫化表面處理....................................35 3.2.3 歐姆接觸電極(Ohmic contact).....................35 3.2.4 閘極氧化層成長..................................37 3.2.5 雷射干涉微影技術定義多重閘極結構..................38 3.2.6 閘極下針區域製作.................................40 3.2.7 T型閘極製程.....................................41 3.3 製程及量測儀器..................................42 3.3.1 雷射干涉微影系統(Laser Interference Photolithography Technique，LIL).......................42 3.3.2 電子束蒸鍍系統 (Electron-beamevaporation system)44 3.3.3 磁控式濺鍍系統 (Magnetron Sputter system).......44 3.3.4 掃描式電子顯微鏡(Scanning electron microscopy，SEM)...................................................45 3.3.5 DC電流-電壓量測系統..............................45 3.3.6 高頻量測系統....................................46 參考文獻................................................56 第四章 實驗結果與討論..................................58 4.1 單閘極之高電子遷移率場效電晶體(Single-Gate HEMTs).58 4.1.1 單閘極結構之直流特性量測..........................58 4.1.2 單閘極結構之閘極漏電流及崩潰電壓量測...............59 4.1.3 單閘極結構之高頻特性量測..........................60 4.2 多重閘極之高電子遷移率場效電晶體(Multiple-Gate HEMTs).................................................60 4.2.1 多重閘極結構之直流特性量測........................61 4.2.2 多重閘極結構之閘極漏電流及崩潰電壓量測.............62 4.2.3 多重閘極結構之高頻特性量測........................63 4.3 T型閘極高電子遷移率場效電晶體(T-Gate HEMTs).......64 4.3.1 T型閘極結構之直流特性量測.........................65 4.3.2 T型閘極結構之漏電流量測及崩潰電壓量測..............65 4.3.3 T型閘極結構之高頻特性量測.........................66 參考文獻................................................77 第五章 結論...........................................79

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