本研究以寬能隙半導體之β-Ga2O3 及 AZOY 為主，分為兩部分，第一部分為β-Ga2O3 蕭特基二極體，第二部分為奈米線+AZOY 之太陽能電池。二極體方面，以低成本之液相沉積法製備 GaOOH 晶粒，經退火後轉變為β-Ga2O3，接著鍍上鋁、鈦、鎢、鎳四種金屬作為蕭特基二極體的前電極且以鋁金屬作為背電極，並以 TLM 之方式量測其接觸電阻率後得知，金屬功函數與金屬和β-Ga2O3 之接觸電阻率成反比而鎳與β-Ga2O3為蕭特基接觸，最後進行電壓-電流量測，鎳作為電極具有最低逆向飽和電流密度 7.3*10^-7 A/cm^2，電流開關比為 26.6。
太陽能電池方面，本研究透過低成本之金屬輔助化學刻蝕的方式製造矽奈米線，並在表面加上 AZOY 後量測其反射率及二極體特性，蝕刻20 秒之矽奈米線具有最低可見光平均(360nm-760nm)反射率 8.6% ，加上AZOY 後反射率為 8.9%，與裸矽相比優化了約 5 倍，可增加空乏區的光能吸收從而提高短路電流。

This research uses wide band gap silicon semiconductor β-Ga2O3 and AZOY as the main materials, and is divided into two parts. The first part is β-Ga2O3 Schottky diode, and the second part is silicon nanowire + AZOY solar cell.
For the diode part, GaOOH crystal grains are prepared by low-cost Liquid Phase Deposition(LPD) method, which is converted into β-Ga2O3 after annealing, and then plated with aluminum, titanium, tungsten, and nickel as the front electrode of the Schottky diode. Using aluminum as the back electrode and measuring its contact resistivity by TLM, it is found that work function of metals is inversely proportional to the contact resistivity of metal and β-Ga2O3, nickel with β-Ga2O3 is Schottky contact.
Finally, I performed voltage-current measurement, nickel as the electrode has the lowest leakage current density of 7.3*10^-7 A/cm^2, and the on-off ratio is 26.64.
For solar cells, this research uses low-cost Metal-Assisted Chemical Etching(MAC etching) to make silicon nanowires. Before sputtering AZOY to the surface to measure the reflectivity and diode characteristics, the silicon nanowires are etched for 20 seconds.
It has the lowest average visible light (360nm-760nm) reflectance of 8.6%, and 8.9% after sputtering AZOY, which is about 5 times better than bare silicon. It can increase the light energy absorbed in the depletion region to increase the short-circuit current.

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