在太陽能電池的應用上，氮化矽薄膜為一常用的抗反射層及鈍化層材料，但其只在特定頻寬有較佳抗反射效果。因此我們發展一種簡單的製程，在矽基板上製作次波長結構，期望能達到寬頻抗反射的效果，以增加太陽能電池對光的吸收。
在第一部分之研究中，我們具焦在反應性離子蝕刻的製程參數研究。我們利用六氟化硫與氯氣電漿對矽進行蝕刻，以通入之氧氣而形成之二氧化矽遮罩，利用此一天然遮罩進行矽蝕刻則可得到奈米尖錐狀結構。我們發現不同比例的蝕刻氣體環境下，會導致抗反射結構之變化。我們藉由一系列之參數調整並將其應用於矽太陽能電池中以期得到最佳之效率改善。其中最佳的奈米尖錐抗反射結構為高度為350–450nm，並使得波長350–850nm之有效反射率下降到小於2%，達到寬頻抗反射的效果。
在第二部分中，本研究著重於探討在具矽奈米尖錐之太陽能電池的製程中，所有的製程參數之研究。其中包含: (1)探討開始進行奈米尖錐蝕刻前之基板表面狀態，本研究在使用不同之溶液進行表面微結構之產生，我們發現可以發現這些微結構對於後來之奈米尖錐之形成與效率之影響有其顯著之影響，我們利用QSSPC進行表面性質之分析。由QSSPC分析可知，使用酸性溶液( HF + HNO3) 在開始進行蝕刻前處理異於使用鹼性溶液(KOH) 之前處理，其對於效率也有所不同之影響。(2)為探討蝕刻奈米尖錐所造成之電漿破壞層對於效率之影響，本研究藉由氫氧化鉀(KOH)進行濕式蝕刻，並發現蝕刻後之矽奈米尖錐高度大幅縮減，然其底部寬度與蝕刻前並無明顯差異。藉由此一處理可將此破壞層消除進而達到效率之改善。實驗結果證實本研究蝕刻奈米尖錐所形成之電漿破壞層對於效率亦有決定性之影響。(3)本研究中亦探討由於表面結構之改變其對射極層之電阻最佳值的變化，我們發現由於表面結構之改變我們可以提高射極層之電阻值進而提高太陽能電池之效率改善。綜合來說，本論文針對奈米尖錐其應用在太陽能電池所遇到之問題，提出可行解決之方法。並對於未來將此技術朝向大量生產以及獲得高穩定性之太陽能電池之製造提供一可行方向。

This research is involving of two parts. First part is that the fabrication of Si nanostructures by reactive ion etching. Si nanostructures with a mount of shapes were fabrication as different gas reactant ratio. Besides the nanoscale features, the high density of nanostructures formed on the multi-crystalline Si surface was also required to significantly reduce the reflectivity. A low reflectivity surface was successfully fabricated with the average reflectivity significantly reduced down to <2% for the wavelength range of 300-850 nm. Other part is the device fabrication. The short wavelength spectral response (blue response) improvement is observed in RIE textured solar cells compared to the standard textured cells. The RIE textured surfaces in combination with optimized emitter resistance result in a remarkable enhancement of short circuit current density. Compared with the acidic textured solar cells, the absolute conversion efficiency of the alkaline + RIE textured cells was improved over 0.5% in average

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