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研究生: 張麟嘉
Chang, Lin-Chia
論文名稱: 丙醯氯在銅(100)和氧/銅(100)表面上的熱化學研究
Thermal Chemistry of Propanoyl Chloride on Cu(100) and O/Cu(100)
指導教授: 林榮良
Lin, Jong-Liang
學位類別: 碩士
Master
系所名稱: 理學院 - 化學系
Department of Chemistry
論文出版年: 2020
畢業學年度: 108
語文別: 中文
論文頁數: 71
中文關鍵詞: 程序控溫反應/脫附(TPR/D)反射-吸收紅外光譜(RAIRS)X光光電子能譜(XPS)Cu(100)丙醯氯
外文關鍵詞: temperature-programmed reaction/desorption (TPR/D), reflection-absorption infrared spectroscopy (RAIRS), X-ray photoelectron spectroscopy (XPS), Cu(100), propanoyl chloride
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  • 本篇論文研究在超高真空系統中,丙醯氯(propanoyl chloride, CH3CH2COCl)在Cu(100)和O/Cu(100)表面的熱化學反應,探討中間態與反應產物。所運用的表面分析技術包括:程序控溫反應/脫附(TPR/D)、反射-吸收紅外光吸收光譜分析(RAIRS) 和X-光光電子能譜(XPS)。
    CH3CH2COCl/Cu(100)的熱反應脫附產物主要有hexane-3,4-dione 、 3-hexyne、H2、CO、CO2。由RAIRS及XPS實驗,發現在160 K時C–Cl鍵已完全斷裂,此時表面中間物為CH3CH2CO(ad)、CH3CH2C(O)C(O)CH2CH3(ad),230 K後hexane-3,4-dione脫附,300 K生成3-hexyne,3-hexyne的生成涉及CH3CH2CO斷裂C–O鍵,病因而產生丙酸根(CH3CH2COO),在600 K後H2、CO、CO2產物脫附。
    CH3CH2COCl在O/Cu(100) 熱反應脫附產物主要有H2、H2O、CO、CO2、CH3CH2COOH 、 H2C=C=O,RAIRS與XPS研究結果發現CH3CH2COCl在150 K斷C–Cl鍵後與表面上預吸附的氧反應形成丙酸根,450 K發生丙酸根脫氫反應,並產生H2、CO、CO2、H2O、丙酸等產物與中間物,550 K時丙酸根分解生成H2C=C=O、H2、CO、CO2。

    Thermal chemistry of propanoyl chloride (CH3CH2COCl) on Cu(100) and O/Cu(100) was studied, using temperature-programmed reaction/desorption (TPR/D), reflection-absorption infrared spectroscopy (RAIRS) and X-ray photoelectron spectroscopy. At 160 K, the RAIRS and XPS results show that a large portion of the adsorbed CH3CH2COCl molecules undergo C–Cl bond cleavage, resulting in the formation of CH3CH2CO(ad) on Cu(100). Hexane-3,4-dione and 3-hexyne are found to be desorbed at 230 K and 310 K, respectively. The formation of 3-hexyne is related to C–O cleavage of CH3CH2CO, and the remaining CH3CH2CO(ad) can combine with the oxygen from the C–O cleavage to generate propanoate (CH3CH2COO). The CH3CH2COO decomposes into H2, CO, and CO2 at ~600 K.
    On O/Cu(100), CH3CH2COCl reacts with preadsorbed O to form CH3CH2COO(ad) at ~160 K. The CH3CH2COO(ad) further reacts at ~480 K to form H2, H2O, CO, CO2, and CH3CH2COOH. Some surviving CH3CH2COO groups and its dissociation fragments continue to react at ~550 K, producing H2, CO, CO2, and H2C=C=O.

    摘要 I 第一章 緒論 1 1.1 表面化學的發展 1 1.2 表面的定義 1 1.3 表面吸附 2 1.4 真空的定義 3 1.5 研究動機及文獻回顧 3 第二章 表面實驗分析技術 8 2.1 程序控溫反應/脫附(Temperature-Programmed Reaction/Desorption, TPR/D) 8 2.2 反射-吸收紅外光譜(Reflection-Absorption Infrared Spectroscopy, RAIRS) 12 2.3 X-光光電子能譜(X-ray photoelectron spectroscopy, XPS) 15 第三章 實驗方法 17 3.1 超高真空系統(Ultra high vacuum system, UHV) 17 3.2 單晶前處理 21 3.3 製備氧化表面 21 3.4 藥品前處理 21 第四章 結果與討論 23 4.1 CH3CH2COCl於Cu(100)及O/Cu(100)表面的程序控溫反應/脫附(TPR/D)研究 23 4.1.1 CH3CH2COCl於Cu(100)表面上的TPR/D研究 23 4.1.2 CH3CH2COCl於O/Cu(100)表面上的TPR/D研究 35 4.2 CH3CH2COCl於Cu(100)及O/Cu(100)表面的反射-吸收紅外光譜(RAIRS)研究 47 4.2.1 CH3CH2COCl於Cu(100)表面上的RAIRS研究 47 4.2.2 CH3CH2COCl於O/Cu(100)表面上的RAIRS研究 57 4.3 CH3CH2COCl於Cu(100)及O/Cu(100)表面的X-光光電子能譜(XPS)研究 61 4.3.1 CH3CH2COCl於Cu(100)表面上的XPS研究 61 4.3.2 CH3CH2COCl於O/Cu(100)表面上的XPS研究 66 第五章 結論 68 參考文獻 69 附錄 i

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