由於平面顯示器產業近幾年來的蓬勃發展，再加上太陽能電池、建築用玻璃鍍膜等能源產業對於光學導電膜的需求日增，因此持續開發新ㄧ代光學導電膜就成了刻不容緩的研究主題。最新開發出的氧化銦鉬(Indium molybdenum oxides, IMO)薄膜因為具有高電子遷移率的特性，在兼顧低電阻率的前提下，能有效提升近紅外光的穿透率，因此獲得廣泛地重視。然而依據現有文獻報導，高載子遷移率的IMO薄膜皆以高溫鍍膜製程製作而成，本研究將以常溫鍍膜為主，結合粉體技術自備靶材，以高電漿密度蒸鍍的方式將氧化銦鉬膜鍍在玻璃基板上，探討靶材中氧化鉬添加量、氧氣含量、退火溫度等製程因子對於IMO膜的光電性質的影響，並由化學組成、組成化學態、微觀結構及缺陷方程式推導薄膜內的反應機構，再進一步由薄膜的研究結果，修正靶材合成製程。

　　就IMO靶材合成製程而言，由降低的晶格常數、電阻率及XRD分析之MoO3揮發與第二相析出情況，確認在大氣環境下以800℃持温一小時的靶材合成條件最佳；就高電漿密度常溫蒸鍍IMO膜而言，由微結構、化學鍵結分析及載子濃度與遷移率的綜合結果， 、 與 在低氧含量與低MoO3添加量中扮演離子散射效應的主要因子；中性化合物 與 則在高氧含量與高MoO3添加量中扮演中性散射效應的影響因子；在適當氧含量下，可獲得最低電阻率3.56x10-4 Ω cm，可見光穿透率更可達到～85%；若是再進一步針對此條件進行真空退火處理，在最高溫度250℃時載子遷移率已可達75.8 cm2/Vs，且近紅外光區的穿透率得到明顯提升，In-Mo+6-O的鍵結型態應是造成高載子遷移率的重要原因。

　　利用還原氣氛在常溫下蒸鍍IMO膜，可降低電阻率及增加製程穩定性，更可以有效提升常溫鍍膜下的載子遷移率，最高值可達53.6 cm2/Vs，相較於氧化製程(10±1 cm2/Vs)高出甚多。 被解離成以四價Mo+4取代三價In+3位置的 、以及-OH、H2O填補結構缺陷，皆能有效降低離子散射效應，載子遷移率因而增加；另外， 中性散射效應是造成高MoO3添加量的IMO膜載子遷移率低的主要原因；若是提高鍍膜溫度，載子遷移率能夠再被提升，但是過多的 中性化合物的吸收效應反而會造成可見光與近紅外光穿透率的降低。因此，延伸在還原氣氛下製作IMO靶材的實驗結果，利用還原氣氛可將MoO3完全固溶進入In2O3晶格，此一靶材合成製程，將可以在常溫、氧化氣氛鍍膜下，降低中性化合物的吸收效應，提高載子遷移率與穿透率。

　Transparent conductive oxide (TCO) films have been extensively researched because of their numerous potential applications, such as flat panel display, solar cell, low emissive and electro-chromic windows and thin film photovoltaics. The innovative TCO in opto-electronic applications is molybdenum-doped indium oxide (IMO), which offers an acceptable performance in terms of high mobility, high near-IR transmittance and conductivity. This work proposed a low temperature (R.T.) fabrication of IMO films on high density plasma evaporation (HDPE) system, comprising of In2O3/MoO3 targets with different MoO3-doping contents. The electrical and optical properties of the IMO films as a function of oxygen content and annealing temperature were also investigated. Moreover, by using XRD and XPS analysis, the scattering mechanisms and the structural properties of the IMO film were examined to determine their correlation with the defect models and opto-electronic properties.

　For the IMO target synthesis in the atmosphere, the optimized parameter of 800℃, 1hr was decided by examining the second phase, decreasing lattice constants and bulk resistivity. From the structural, electrical and optical properties of the IMO films, this work proposed that the neutral complex and dominated the scattering mechanism at high doping content and oxygen content, whereas ionized complex , and dominated at low doping level or oxygen content. Uniform 99/1 IMO crystallized films with minimum resistivity of 3.56x10-4 Ω cm and average visible transmittance of ～85% were produced at an optimum oxygen content of ～9%. The crystallization mechanisms were measured by vacuum annealing at 150, 200 and 250℃ for 30min. The results of XRD, XPS and electrical properties suggested that the room-temperature crystallization was induced from the highest compressive strain, caused by the charged associates and oxygen vacancies. The highest mobility of 75.8 cm2/Vs of the IMO film was obtained at 250℃ due to the In-Mo+6-O clusters and strain relaxation between (222) and (440) orientation.

　Hydrogen was added to the Ar+O2 gas mixture during the preparation of the IMO films. With hydrogen, the decreasing resistivity and the broadened process window were mainly caused from an apparent increase in the mobility. Higher mobility (53.6 cm2/Vs) under the reduced process rather than lower one (10±1 cm2/Vs) under oxidized process was obtained. created from Mo+4 substituting In+3 and the incorporation of –OH and H2O into vacancies could decrease the ionized scattering effects. The scattering effect of neutral clusters was responsible for the low mobility of high doping IMO films. The light absorption of also deteriorated the transmittance in the visible-near IR spectral range. Therefore, for high mobility consideration, the IMO targets were synthesized under reduced atmosphere and MoO3 was incorporated totally into In2O3 lattice. The IMO films with high mobility would be expected by using reduced IMO targets.

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