本實驗中以離子束濺射系統(Ion Beam Sputter system) 濺鍍鉬金屬在藍寶石C軸取向的(Al2O3(0001)) 基板上，將 2 克硫粉放置上風處，再將不同重量的二硫化鐵與三氧化鉬粉末放置在中間處，二硫化鉬粉末靠近基板的一端，接著66毫克的三氧化鉬粉末放置在靠近硫粉的一端，通入氮氣至壓力為 0.72 torr，將樣品放置管爐中心升溫至 815℃，升溫速率為 20℃/min，並固定持溫35分鐘，並探討摻雜定量三氧化鉬粉末對製備大面積二硫化鉬薄膜的影響，藉由提高退火溫度、再降低三氧化鉬粉末的量，得到固定厚度鉬金屬硫化之薄膜較佳的晶向。接著再以沉積不同厚度的鉬金屬與使用固定的退火條件，並加入不同量的二硫化鐵粉末以及三氧化鉬粉末66毫克一起硫化，得到定量二硫化鉬的磁性摻雜之較佳的薄膜晶向以及其磁性的變化。
量測機制上，使用拉曼光譜儀(Raman Spectrometer)、X 光光電子能譜(X-ray photoemission spectroscopy, XPS)做薄膜的定性分析，得知成功摻雜鐵的 MoS2 薄膜，在 X 光繞射(X-ray diffraction, XRD)的分析中MoS2摻雜鐵的樣品具有單晶 c 軸取向的晶向，再以超導量子干涉元件(Superconducting Quantum Interference Device, SQUID)、可見光磁圓二色性光譜(Optical magnetic circular dichroism, OMXD)量測薄膜的磁性。
結果顯示，實驗中成功地將Fe原子原位取代摻雜到MoS2薄膜中。我們在Fe：MoS2光致發光中發現了明確的Fe相關的光譜特徵，該特徵在室溫下穩定。此外，也發現Fe：MoS2透過超導量子干涉元件量測薄膜中的磁滯現象顯示為鐵磁性。

We prepared the undoped and Fe-doped MoS2 layered crystals to compare their electrical and magnetic properties. In this experiment, we have investigated the ferromagnetic properties of large-area molybdenum disulfide (MoS2) thin film on a c plane sapphire substrate by iron using a Ion Beam Sputter(IBS) system and the tube furnace. We found that the sample has a single-crystalline c-plane orientation by X-ray diffraction (XRD) analysis. For elemental quality of Fe-doped MoS2 analysis through the Raman Spectrometer, X-ray photoemission spectroscopy (XPS). We observe the magnetic properties of the Fe-doped MoS2 film from the optical magnetic circular dichroism (OMCD), and the superconducting quantum interference device (SQUID).

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