近期反鐵磁拓撲絕緣體MnBi2Te4有很多重要的研究與發展，與之結構相似但磁電性質相異的MnSb2Te4也開始被關注。因此藉由改變Mn(Sb1-xBix)2Te4中Bi與Sb的比例與Mn的量，我們期望能看見能帶結構與磁電性的轉變。在能帶的實驗結果中，我們發現在Mn0.5(Sb1-xBix)2Te4的系統中存在一個n-type到p-type的轉換點，並在x=0.65的樣品中證實其六重對稱的結構。我們也觀察到改變Mn的比例會對其拓樸表面態產生顯著的變化。在磁電性的量測方面我們發現與文獻不一樣的結果，其中MnSb2Te4與Mn0.5(Sb0.35Bi0.65)2Te4為超順磁性而Mn0.5Sb2Te4為反鐵磁性，同時我們也觀察到該系列樣品具有半導體的傳輸特性。

Recently, the antiferromagnetic topological insulators of MnBi2Te4 have been developed. On the other hand, the MnSb2Te4 materials crystal structure similar to MnBi2Te4 also have been focused, which have different magnetic and electronic transport properties. The band structure of Mn0.5(Sb1-xBix)2Te4 (MSBT) system was measured by angle-resolved photoemission spectroscopy (ARPES). The n to p type transition point in MSBT thin films and sixfold symmetric structure in x=0.65 are confirmed. The topological surface state of MnSb2Te4 is significantly affected by the Mn ratio. Moreover, the result of magnetic and electronic transport properties is different from previous studies. We observed that MnSb2Te4 and Mn0.5(Sb0.35Bi0.65)2Te4 are superparamagnetic, while Mn0.5Sb2Te4 is antiferromagnetic by the superconducting quantum interference device (SQUID). We also observed MnSb2Te4 and Mn0.5(Sb0.35Bi0.65)2Te4 have the transport property of semiconductor by physical property measurement system (PPMS).

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