利用分子束磊晶系統(MBE)於Si(111)基板上成長氮化銦鎵/氮化鎵奈米柱，並且在成長過程中，固定銦、鎵以及氮電漿流量，因為我們MBE加熱器的熱輻射會造成樣品加熱不均勻現象，透過溫差定義三個不一樣溫度的區域，且成長溫度不一樣，氮化銦鎵的合金比例也會跟著改變，並分別去量測其電子顯微鏡、光致發光光譜以及光壓電效應。並且從電子顯微鏡影像得到較高溫度的奈米柱成長品質較佳，且經過光致發光光譜的計算得知，成長溫度越低，銦原子比例含量越多，然後將氮化銦鎵奈米柱製作成奈米發電機去量測壓電效應，結果隨著銦含量的增加，壓電效應也隨之增加。並且比較氮化銦鎵奈米發電機在照光下與暗室的壓電效應差別，結果為照光下壓電電壓也會因為照光後而增大電壓。

InGaN nanorods are grown on Si (111) substrates by using plasma-assisted molecular beam epitaxy (PA-MBE). The composition ratio of In/Ga in InGaN nanorods was manipulated by changing substrate temperature under the same indium, gallium, and nitrogen plasma flux. The photoluminescence spectra of InGaN nanorods are shifted to longer wavelengths due to the increasing of In composition while decreasing the substrate temperature. The piezoelectric performance and piezo-phototronic effects were demonstrated in the vertical integrated nanogenerators (VING) based on InGaN nanorods in varying indium composition. We show that higher output voltage of InGaN nanogenerators higher indium composition in InGaN nanorods. In addition, the output voltage of InGaN nanogenerators was also increased under the visible light illumination.

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