本研究探討不同製程參數之陽極氧化鋁(Anodic Alumina Oxide)成長於磷化鋁鎵銦(AlGaInP)發光二極體改善靜電放電(ESD)特性並且對於磷化鋁鎵銦發光二極體之光取出效率有提升之效果。
本文共分四部分，包括：（1）空間電荷於陽極氧化鋁(AAO)中形成機制之探討（2）不同製程參數成長於矽基板上之陽極氧化鋁對空間電荷之影響，（3）針對不同製程參數之陽極氧化鋁成長於磷化鋁鎵銦發光二極體對靜電放電特性討論，以及（4）成長於磷化鋁鎵銦發光二極體之陽極氧化鋁提升光取出效率。
陽極氧化鋁穩定狀態下孔洞的生成方向是跟鋁表面成垂直，而且是兩個反應達穩定所造成的結果，ㄧ個是在氧化層/電解液介面處氧化鋁的溶解，另一個是在金屬層/氧化層介面處氧化鋁生成。電解完成之後，我們可以發現在氧化鋁(alumina)及其阻障層(barrier layer)都有電荷存在，這樣的空間電荷可以幫助我們了解改善LED靜電放電的特性。
為了要了解空間電荷之電荷量，此研究將不同製程參數的氧化鋁成長於矽基板上，利用金屬-絕緣層-半導體(MIS)結構量測電性進而計算電荷量之多寡。其中氧化鋁製程而影響空間電荷量最多的參數是溫度與氧化鋁阻障層厚度，並且電荷對於不同的製程電壓參數也會有些許的改變。
利用不同製程參數成長於矽基板上之陽極氧化鋁成長於磷化鋁鎵銦發光二極體上，觀察其發光二極體漏電流之變化，進而探討整個元件對靜電放電特性有何影響與改善。對於成長於磷化鋁鎵銦發光二極體上之氧化鋁亦可達到了粗化的效果來增加光取出效率。

This research develops the different experimental parameters of anodic alumina oxide grown on AlGaInP light emitting diode to improve the ESD characteristics and light extraction of AlGaInP light emitting diode.
This dissertation is divided into four parts, including (1) discuss the space charges formation in anodic alumina oxide, (2) different anodic alumina oxide experimental parameters grown on Si substrate influence on space charges, (3) the ESD characteristics of AAO grown on AlGaInP light emitting diode as different anodic alumina oxide experimental parameters, (4) improve the light extraction.
AAO pores form vertically to the aluminum in a steady state and this formation results from two reactions. One is the dissolution between oxide/electrolyte surfaces; the other is the formation of metal/oxide surfaces. We can find the charges existed in the alumina and barrier layer after finishing electrolysis. These space charges can help us realize and improve the ESD characteristics of light emitting diode.
In order to realize the quantity of space charges, the studies show that using metal-insulator-semiconductor (MIS) structure measures properties of electric and then calculates the quantity of space charges by different anodic alumina oxide experimental parameters grown on Si substrate. Among these parameters, temperature and thickness of AAO are the dominative factors in this study. And then different anodized voltage may have little effect on charges.
Observe the leakage current change of light emitting diode by different anodic alumina oxide experimental parameters grown on light emitting diode and proceed to the next step to discuss the influence and modification of ESD characteristics. It also can achieve the light extraction by roughness for AAO grown on AlGaInP light emitting diode.

[1] W. T. Rhoades, “Avoidance of ESD effects”, IEEE International Conference on EMC, pp. 184-189, 1988.
[2] N. Mohan and A. Kumar, “Modeling ESD protection”, IEEE Potentials, Vol. 24, pp. 21-24, 2005.
[3] Liu Shanghe, Tan Zhiliang, Xu Xiaoying, Wei Guanghui, Wu Zhangcheng, “Study on ESD characteristics and its effect mechanism”, IEEE 2003 3rd Int. Symp. Electromagn. Compat., pp. 493-496, may. 2002.
[4] 賴柏青，〈靜電放電現象之理論分析與量測〉，國立中山大學，碩士論文，民國95年。
[5] 賴耿陽，《靜電對策實務》，初版，台南市，複文書局，民國93年。
[6] 二澤正行著，《圖解靜電管理入門》，羅國杰譯，初版，台北市，全華科技圖書，民國94年。
[7] D. AlMawlawi, N. Coombs, and M. Moskovits,“Magnetic Properties of Fe deposited into anodic aluminum oxide pores
as a function of particle size,” J. Appl. Phys. Vol. 70, pp.4421–4425, 1991.
[8] I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A.Scherer, “30% external quantum efficiency from surface textured, thin-film light emitting diodes,” Appl.Phys. Lett., vol. 63, pp. 2174–2176, 1993.
[9] R. Windisch et al.,“40% efficient thin-filmsurface-textured light-emitting diodes by optimization of natural lithography,” IEEE Trans. Electron Devices, vol. 47, pp. 1492–1498, July 2000.
[10] R. Windisch, P. Heremans, A. Knobloch, P. Kiesel, G. H. Dohler, B. Dutta, and G. Borghs, “Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes,” Appl. Phys. Lett., vol. 74, pp. 2256–2258, 1999.
[11] Shyi-Ming Pan, Ru-Chin Tu, Yu-Mei Fan, Ruey-Chyn Yeh, and Jung-Tsung Hsu,“Improvement of InGaN–GaN Light-Emitting Diodes with Surface-Textured Indium–Tin–Oxide Transparent Ohmic Contacts,”IEEE Photonics Technology letters, vol. 15, pp. 649–651, 2003.
[12] H. Masuda and K. Fukuda, Science 268, 1466 (1995).
[13] H. Masuda, F. Hasegwa, and S. Ono, “Self-Ordering of Cell Arrangement of Anodic Porous Alumina Formed in Sulfuric Acid Solution,” J. Electrochem. Soc. vol. 144, pp. L127-L130. 1997.
[14] H. Masuda, K. Yada, and A. Osaka, “Self-Ordering of Cell Configuration of Anodic Porous Alumina with Large-Size Pores in Phosphoric Acid Solution,” Jpn. J. Appl. Phys., Part 2 vol. 37, pp. L1340-L1342, 1998.
[15] A. P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gosele,“Hexagonal pore arrays with a 50–420 nm interpore distance formed by self-organization in anodic alumina”, J. Appl. Phys. vol. 84, pp.6023–6026, 1998
[16] D. Crouse,Yu-Hwa Lo, A. E. Miller and M. Crouse,“Self-ordered pore structure of anodized aluminum on silicon and pattern transfer,”Appl. Phys. Lett., vol. 76, pp. 49–51, 2000.
[17] C. H. Martin, “Membrane-Based Synthesis of Nanomaterials,”Chem.Mater. vol. 8, pp. 1739-1746, 1996.
[18] X. Bao, F. Li, and R. M. Metzger, “Activation volume of a-Fe particles in alumite films,” J. Appl. Phys. 81, pp. 3806–3808, 1997.
[19] Masashi NAKAO, Satoshi OKU, Toshiaki TAMAMURA, Kenshi YASUI and Hideki MASUDA, “GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes,” Jpn. J. Appl. Phys vol. 38, pp.1052-1055, 1999.
[20] C. Papadopoulos, A. Rakitin, J. Li, A. S. Vedeneev, and J. M. Xu,“Electronic Transport in Y-Junction Carbon Nanotubes,” Phys. Rev. Lett. vol. 85, pp. 3476-3479, 2000.
[21] Y. D. Wang,S. J. Chuaa, M. S. Sander, P. Chen,S. Tripathy and C. G. Fonstad, ”Fabrication and properties of nanoporous GaN films,” Appl. Phys. Lett., vol. 85, pp. 816–818, 2004.
[22] Hidetaka Asoh, Mamoru Matsuo, Megumi Yoshihama, and Sachiko Ono, “Transfer of nanoporous pattern of anodic porous alumina into Si substrate,” Appl. Phys., Lett.vol.83, pp. 4408–4410, 2003
[23] H. Masuda and M. Satoh, “Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation Mask,” Jpn. J. Appl. Phys.,Part 2 vol. 35, pp. L126-L129, 1996.
[24] M.S. Sander , L.-S. Tan,” Nanoparticle Arrays on Surfaces Fabricated Using Anodic Alumina Films as Templates,”Adv.Funct.Master. vol. 13, pp. 393-397, 2003
[25] J. P. O’Sullivan, G. C. Wood, Proc. R. Soc. Lond., Ser. A317, pp.511, 1970.
[26] J. Siejka and C. Ortega, J. Electrochem. Soc. vol. 124, pp. 883, 1977.
[27] I. Belca, B. Jovanic et al., Electrochim. Acta 45 (1999) 993.
[28] J. L. Yao, J. Tang et al., Surface Science 514 (2002) 108.
[29] V. P. Parkhutik, Corros. Sci. 26, pp. 295, 1986.
[30] F. Li, L. Zhang, and R. M. Metzger, “On the Growth of Highly Ordered Pores in Anodized Aluminum Oxide,” Chem. Mater. vol. 10, pp. 2470-2480, 1998.
[31] A. Goetzberger, E. Klausmann, and M. J. Schulz,“Interface States on semiconductor/insulator interface”, CRC Critical Reviews in Solid State and Materials Sciences 6,1 (1976).
[32] G. DeClerck, “Characterization of surface states at the Si-SiO2 interface”, in Nondestructive Evaluation of Semiconductor Materials and Devices (J. N. Zemel, ed), Plenum Press, New York, 105-148 (1979).
[33] Herbert R. Philipp and Lionel M. Levinson, “ZnO Varistors for Protection Against Nuclear Electromagnetic Pulses,” J. Appl. Phys. Vol. 52, pp. 1083(1981)
[34] 江國領，〈具靜電保護能力覆晶式發光二極體之研究〉，長庚大學，碩士論文，民國96年
[35] R. Paul Clayton, “Introduction to electromagnetic compatibility”, John Wiley & Sons Inc., chapter 12, 1992.
[36] Warren Boxleitner, “Electrostatic Discharge and Electrostatic Equipment”, IEEE Press., chapter 1~2., 1988.
[37] V. Prasad Kodali, “Engineering Electromagnetic Compatibility”, 2nd edition, The Institute of Electrical and Electronics Engineers Inc., section 2.4 and 8.3, 2001.
[38] Herbert R. Philipp and Lionel M. Levinson, “ ZnO Varistors for Protection Against Nuclear Electromagnetic Pulses ”, J. Appl. Phys. 52, 1083 (1981)
[39] 候春麟，蔡燿城，〈靜電放電之測試與防制〉，新竹市，工研院系統晶片技術中心編著，民國92年。
[40] 張欣怡，〈功率覆晶式發光二極體之結合方式與抗靜電子基板之研究〉，長庚大學，碩士論文，民國95年。
[41] 程俊毓，〈氮化鎵MSM壓變電容元件研製及其ESD應用研究〉， 長庚大學，碩士論文，民國96年。
[42] 陳柏全，〈氮陳柏全化鎵MSM壓變電容元件研製及其ESD應用研究〉，長庚大學，碩士論文，民國96年。
[43] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park,“Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface” J. Appl. Phys. vol. 93, pp. 9383-9385, 2003.
[44] I. Vrublevsky, A. Jagminas b, J. Schreckenbach, W.A. Goedel , “Embedded space charge in porous alumina films formed in phosphoric acid” Electrochemical Acta vol.53 pp.300–304, 2007
[45] 林清偉, 有機非揮發性記憶體之量測與分析, 國立中央大學電機工程研究所。