摘要
本論文以金銦(AuIn)共金鍵結(Eutectic bonding)技術為主軸，將其應用在Ⅲ-Ⅴ族材料的砷化鎵太陽能電池製程；以及n型氮化鎵半導體極化表面的金半接觸特性(Metal-semiconductor Characteristic)量測上。
首先藉由晶圓鍵結(Wafer bonding)的製程方法，將反射鏡製作於砷化鎵太陽能電池元件中。如此的實驗構想為：假設入射太陽能電池的光子並未被基極層(Base layer)完全吸收轉換，則透過在元件中製作銀(Ag)反射鏡來使剩餘的太陽光子有被反射再吸收的機會。以鈦(Ti)作為實驗對照组，鈦(Ti)在波長800nm情況下反射率44%而銀(Ag)的反射率88%，且銀(Ag)反射鏡元件在光電流密度(JSC)表現上相對於鈦(Ti)反射鏡元件約提升了5.3%。因此推測元件中反射鏡的製作，是為提升轉換校率的方法之一。
接續實驗為在Thin GaN LED的研究上，欲找到能與n型氮化鎵材料的N-face極化面形成歐姆接觸特性的條件。實驗結果；在摻雜濃度1×1019 cm-3的n型氮化鎵N-face晶片表面搭配鉻金(CrAu)的蒸鍍，在爐管250℃合金化(Alloy)5分鐘的條件下可形成較穩定的歐姆接觸，而隨著合金化(Alloy)的溫度與時間提升其特性漸趨蕭特基接觸趨勢。而後透過傳輸線模型(TLM)量測發現；在相同的鹽酸(HCl)清洗條件下，N-face極化面的ρc約大於Ga-face極化面一個數量級，若增強鹽酸(HCl)的清洗強度，可降低N-face的ρc值並增加歐姆接觸的穩定性。

Abstract
This thesis aims at applying Gold-Indium (Au/In) eutectic wafer bonding techniques for the research of III/V compound materials, including the fabrication of Gallium-Arsenic (GaAs) solar cells and measurement of metal-semiconductor contact features in crystal polarity surfaces of Gallium-Nitride (GaN) materials.
By the fabrication process of wafer bonding, the metal reflection mirror is applied to the rear side of Gallium-Arsenic solar cell devices to further reflect the residual parts from front incident photons. In the conditions at wavelength of 800 nm , the reflectance of Ti and Ag are 44% and 88%, respectively. The photocurrent density (JSC) for Ag mirror devices is enhanced　by 5.3% as compared to Ti mirror cells.
The contact characteristics of overturned GaN epitaxy in N-face is also studied. The Cr/Au alloy, under N2 ambient at 250℃ for 5 minutes, for the N-face n-GaN shows Ohmic characteristics while the doping level is 1×1019 cm-3.experienceOhmic However, the contact becomes Schottky characteristics when the alloy temperature is above 300℃ or longer alloy time (>5 min). In addition, the specific contact resistance (ρc) of both N-face and Ga-face could be reduced by cleaning wafer surfaces of HCl aqua solutions.

第一章：
【1】 施敏, “Semiconductor Devices Physics And Technology,” 2nd Edition 國立交通大學出版社, 2006.
【2】 黃惠良, 蕭錫鍊, 周明奇, 林堅楊, 江雨龍, 曾百亨, 李威儀, 李世昌, 林維芳, “太陽電池,” 五南出版社, 2008.
【3】 R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “ 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells,” Appl. Phys. Lett., Vol. 90, No. 18, pp183-516, 2007.
【4】 楊智喬, “三五族太陽能電池製作與分析Fabrications and Characteristics of Group III/V Solar Cells,” 國立成功大學光電科學與工程研究所碩士論文, 2007.
【5】 J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, and K. M. Jones, “40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions,” Appl. Phys. Lett., Vol. 93, No. 12, pp123-505, 2008.
【6】 N. W. Cheung, T. D. Sands, W. S. Wong, “Separation of thin film from transparent substrates by selective optical processing,” United State Patent Number 6071795, Jun. 6, 2000.
【7】 Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Denbaars, S. Nakamura, E. L. Hu, “Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching,” Jpn. J. Appl. Phys., Vol. 43, No. 5A, ppL637-L639, 2004.
【8】 E. T. Yu, M. O. Manasreh, “Ⅲ-Ⅴ Nitride Semiconductors Application and Device,” Taylor&Francis, 2003.
第二章：
【1】 “ASM Handbook,Alloy phase diagrams,” 福懋出版社, 1993.
【2】 A. Tolmatchev, V. Siklitsky “http://www.ioffe.rssi.ru/SVA/NSM/Semicond/,” 1998-2001.
【3】 楊泰嘉, “覆晶封裝之熱應力與翹曲分析Annalysis of Thermal Stress and Warpage of Packaged Flip Chips,” 私立逢甲大學材料與製造工程研究所碩士論文, 2006.
【4】 楊智喬, “三五族太陽能電池製作與分析Fabrications and Characteristics of Group III/V Solar Cells,” 國立成功大學光電科學與工程研究所碩士論文, 2007.
【5】 施敏, “Semiconductor Devices Physics And Technology,” 2nd Edition 國立交通大學出版社, 2006.
【6】 杜尚儒, “透明導電模沉積於矽基板之異質接面太陽能電池研究Transparent Conducting Oxide Deposited on Silicon Wafer for Fabrication of Heterojunction Solar Cell,” 國立成功大學光電科學與工程研究所成功大學碩士論文, 2008.
【7】 D. A. Neamen, “Semiconductor Physics & Devices,” Third Edition McGraw-Hill, 2003.
【8】 黃惠良, 蕭錫鍊, 周明奇, 林堅楊, 江雨龍, 曾百亨, 李威儀, 李世昌, 林維芳, “太陽電池,” 五南出版社, 2008.
【9】 “Standard Test Method for Electrical Performance of Photovoltaic Cells Using Reference Cells Under Simulated Sunlight,” American Society for Testing and Materials Committee, E948-950, 1995.
第三章：
【1】 杜尚儒, “透明導電模沉積於矽基板之異質接面太陽能電池研究Transparent Conducting Oxide Deposited on Silicon Wafer for Fabrication of Heterojunction Solar Cell,” 國立成功大學光電科學與工程研究所碩士論文, 2008.
【2】 黃惠良, 蕭錫鍊, 周明奇, 林堅楊, 江雨龍, 曾百亨, 李威儀, 李世昌, 林維芳, “太陽電池,” 五南出版社, 2008.
【3】 施敏, “Semiconductor Devices Physics And Technology,” 2nd Edition 國立交通大學出版社, 2006.
【4】 李正中, “薄膜光學與鍍膜技術,” 藝軒出版社, 2006.
【5】 J. F. Geisz, S. Kurtz, M. W. Wanlass, J. S. Ward, A. Duda, D. J. Friedman, J. M. Olson, W. E. McMahon, T. E. Moriarty, J. T. Kiehl, “High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction,” Appl. Phys. Lett., Vol. 91, No. 2, pp023-502, 2007.
【6】 T. Jang, S. N. Lee, O. H. Nam, Y. Park,“Investigation of Pd/Ti/Al and Ti/Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN,” Appl. Phys. Lett., Vol. 88, No. 19, pp193-505, 2006.
第四章：
【1】 T. Jang, S. N. Lee, O. H. Nam, and Y. Park, “Investigation of Pd/Ti/Al and Ti/Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN,” Appl. Phys. Lett., Vol. 88, No. 19, pp193-505, 2006.
【2】 H. B. Michaelson, “The work function of the elements and its periodicity,” Appl. Phys. Lett., Vol. 48, No. 11, pp4729-4733, November 1977.
附錄：
【1】 D. K. Schroder, “Semiconductor Material and Device Characterization,” 3rd edition, John Wiely & Sons, 2005