本篇論文主要是探討如何改善在消費性電子產品市場中逐漸取代電荷耦合元件（Charge Coupled Device，CCD）而成為主流的互補式金氧半影像感測元件(CMOS image sensor, CIS)其影像品質。我們研究出利用很少應用在互補式金氧半影像感測元件上的應變技術來改善其低頻雜訊特性以提升影像畫質，成功的利用具有高伸張應力的氮化矽薄膜做為鈍化層，來減低互補式金氧半影像感測元件的讀取雜訊(Read Noise，RN)約18.5% 及隨機電報式訊號(Random Telegraph Signal，RTS)約13.3%。並更進一步的解釋了應變技術改善互補式金氧半影像感測元件的原理機制。
　在先進的半導體製程當中廣泛的利用應變技術來減少載子散射現象藉此提升元件的遷移率來達到提升元件的效能，而互補式金氧半影像感測元件的讀取雜訊(Read Noise，RN)及隨機電報式訊號(Random Telegraph Signal，RTS)的產生原因與載子散射現象息息相關，於是我們使用背照光式的互補式金氧半影像感測元件技術在其背面製程當中用高伸張應力的鈍化層，藉由伸張應力來同時改善載子散射及介面陷阱密度，有效的改善了互補式金氧半影像感測元件技術的雜訊現象。

This thesis is study to improve image quality on CIS (CMOS image sensor) , that gradually replace the CCD（Charge Coupled Device） to become mainstream in the consumer electronics market. We developed to using strain techniques improve the characteristics of the low-frequency noise for enhance image quality, which is rarely used in CIS (CMOS image sensor). Then successful using high tensile stress silicon nitride film as a passivation layer to improve the RN (Read Noise) 18.5% and RTS (Random Telegraph Signal) 13.3% on the CIS (CMOS image sensor). Moreover, further explanation the principle mechanism of strain technology to improve CIS (CMOS image sensor).
The strain technology has widely application in state-of-the-art semiconductor industry due to that can reduce carrier scattering phenomenon to enhance the carrier mobility for achieve better device performance. However, the RN (Read Noise) and RTS (Random Telegraph Signal) on CIS (CMOS image sensor) causes carrier scattering phenomena with strong correlation. So we utilize the passivation layer with high tensile stress for the back side illuminated CIS (CMOS image sensor) technology in the back side process. Using the tensile stress can reduce the carrier scattering phenomena and interface trap density to improve the noise characteristics effectively on CIS (CMOS image sensor).

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