近年來整合載子傳輸 (carrier)與載子自旋 (spin)的稀磁性半導體元件受到廣泛的研究，其中奈米結構之氧化鋅由於其良好的光電特性與應用潛力成為最具研究價值的材料之一。
本研究以傳統熱退火(Annealing)及電致結晶(Electrical Induced Crystallization, EIC)等擴散製程摻雜鐵及碳原子至氧化鋅薄膜結構中，藉以探討其光、電及磁特性。本實驗使用蒸鍍與濺鍍法於矽基板及玻璃基板上沉積ZnO(100nm)/Fe(30nm)及ZnO(100nm)/C(30nm)雙層膜結構，藉由熱擴散製程進行摻雜，並同時提升氧化鋅薄膜之結晶性，進而達到更高飽和磁化量值及光、電性質的改善。由於ZnO/C結構經熱擴散摻雜後具有相對穩定之相組成及物理特性，本研究利用該系統導入通電擴散製程，發現除了在較低耗能及溫度下顯著提升氧化鋅載子濃度並產生鐵磁性 (1.78×10-6emu)外，也同時減少碳層的消耗程度提高系統的穩定度。此外，本實驗以業界普遍使用之離子佈植製程探討ZnO佈植C後經退火熱處理其結晶性變化對氧化鋅薄膜物理特性之影響，熱處理後除了結晶性提升及壓應力消除 (-448.3MPa→34.4MPa)，更多碳原子置換導入張應力也使載子濃度提升並產生鐵磁性 (1.27×10-6 emu)。由於碳摻雜及特定方向的外加磁場能夠改善氧化鋅稀磁性半導體之氣體感測能力，本實驗利用酒精氣體 (100~500ppm)比較上述擴散及離子佈植製程對於ZnO/C系統在常溫常壓下的敏感性及反應速度，結果發現通電擴散製程之ZnO與氣體間有較大的反應表面積，故擁有最佳之感測能力。

ZnO/Fe and ZnO/C multilayer structure were used to manufacture DMS by diffusion process including annealing and EIC (Electrical Induced Crystallization) process. To obtain higher saturation magnetization with increasing contents of dopants, diffusion process was imported to improve crystallinity of ZnO among the doping process. In this work, UV-visible, Hall measurement and SQUID were used to investigate physical properties, and diffusion mechanism was achieved by XPS, SIMS and TEM. The results showed that ZnO/C system was more stable than ZnO/Fe after annealing with increasing temperature, and saturation magnetization of ZnO/C was improved among the doping process. In addition, EIC process enhance the RT ferromagnetism of ZnO/C system significantly in relatively lower temperatures. Notably, EIC raised the gas sensitivity the most of ZnO system.

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