| 研究生: |
陳劭恩 Chen, Shao-En |
|---|---|
| 論文名稱: |
以電子束蒸鍍法製備摻雜鎢離子之二氧化釩薄膜的熱致變色性質研究 Investigation of thermochromic properties of W-doped vanadium dioxide thin films deposited by electron beam evaporation |
| 指導教授: |
黃肇瑞
Huang, Jow-Lay |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2017 |
| 畢業學年度: | 105 |
| 語文別: | 中文 |
| 論文頁數: | 161 |
| 中文關鍵詞: | VO2 、WxV1-xO2 、退火處理 、電子束蒸鍍法 、摻雜 |
| 外文關鍵詞: | vanadium dioxide, tungsten-doped vanadium dioxide, e-beam evaporation, annealing, doping |
| 相關次數: | 點閱:128 下載:11 |
| 分享至: |
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由於溫室效應的影響,近來在能源消耗及溫室氣體排放的問題逐年增長,為了解決暖化與能源短缺問題,可在不消耗其他能源的前提下使建築自我減少或隔絕太陽光輻射溫度的吸收,將可有效改善室內冷卻的問題,達到節省能源、費用及改善空氣品質等目的。
具熱致變色性質之二氧化釩(VO2)會在接近於"68 °C" 的相變化溫度("T" _"t" )經歷一個完全可逆的半導體-金屬相變化,變伴隨著電性及光學性質的急遽變化,使其可應用在光/電切換裝置,如憶阻器、Mott場效應晶體管、可調式超材料、表面等離激元、抗反射裝置、智慧窗…等。然而純相VO2的"T" _"t" 還是太高,並不足以應用在與室溫溫度相關的應用端上,因此將改變薄膜厚度以及摻雜鎢離子來改變薄膜結構,使其具有低"T" _"t" 。
以往高品質摻鎢之VO2薄膜大多採用APCVD、AACVD、PLD及濺鍍法等方式製備,而在本篇研究中將使用至今尚未有文獻成功報導的電子束蒸鍍法作為薄膜製備之製程,並針對其晶體結構、化學成分及光學性質進行探討。
實驗結果顯示,VO2薄膜晶體結構會隨著退火溫度的提升,自VO2(B)轉換為VO2(M)結構。摻雜W離子之VO2薄膜(WxV1-xO2),其部分釩離子的價態從V4+還原為V3+,而W離子以W6+的形式存在與VO2晶格中,造成VO2晶體結構的變化。在光學性質方面,VO2薄膜在"68 °C" 附近展現出優異的紅外光切換效率(〖"∆T" 〗_"IR" ),且"T" _"t" 隨著薄膜厚度的減少而些微降低;WxV1-xO2薄膜的"T" _"t" 則隨著W摻雜量增加而大幅度地降低,且伴隨著紅外光遮蔽能力的降低。此外,當W含量過多時甚至在室溫附近的溫度範圍內無法觀測到明顯的熱滯迴圈。
Thermochromic vanadium dioxide (VO2) undergoes a fully reversible semiconductor-metal transition (SMT) at a critical temperature (Tt) of ~68 °C with a dramatic change in electric and optical properties, which makes it an attractive candidate for its application in smart windows. Switchable VO2 and W-doped vanadium dioxide (WxV1-xO2) thin films are grown over quartz substrates via electron beam evaporation technique by using VO2 / WxV1-xO2 as targets at room temperature (RT) followed by post annealing process at different temperatures. The as-deposited films are amorphous, and that transform to monoclinic VO2 (VO2(M)) with (011)-preferred orientation after annealing at 500 °C under vacuum. The (011) peak of W-doped VO2 films shifts to a lower diffraction angle as compared with un-doped VO2 films which confirms the incorporation of W ions into the VO2 lattice. Temperature dependent optical transmittance measurement demonstrates the thermochromic properties, with a reduction in the phase transition temperature (Tt) as observed in W-doped VO2 films, which is attributed to the variation of electron structure in VO2 due to doping. The films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and optical transmittance measurement.
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