由於氮化鎵具有極佳之光電特性，已廣泛應用於各種光電元件之製作。本實驗室結合氮化鎵與奈米柱結構的優勢，以自行開發之爐管型電漿輔助化學氣相沉積設備(plasma enhanced chemical vapor deposition)，成長氮化鎵奈米柱。為了避免奈米柱在成長時發生融合成長(merge)的現象，造成晶格缺陷。本論文著重探討如何以PECVD控制氮化鎵奈米柱之成核密度。可概分為兩大部分，分別為控制反應物濃度，包含金屬鎵原子及氮離子；控制基板溫度以成長低密度氮化鎵奈米柱。另一部分為加入氫電漿，改變氮化鎵奈米柱之成長機制，成長低密度氮化鎵奈米柱。

GaN is an excellent semiconductor material for the application due to its nature property. We combine the advantages of GaN and nano rod structure and present a self-developed PEVCD system for the GaN nano rod growth. To avoid merging of nano rods which leads to lattice defects during growth, this work focuses on controlling the nucleation density of GaN nano rods in PECVD system. The first part investigates the parameters for the growth of low density GaN nano rods: By controlling the concentration of reactant, namely gallium atoms and nitrogen ions; and by controlling the temperature of substrates. The second part focuses on growing low density GaN nanorods via hydrogen plasma to change GaN growth mechanism.

[1]http://www1.eere.energy.gov/buildings/ssl/sslbasics_whyssl.html
[2]http://apps1.eere.energy.gov/buildings/publications/pdfs/ssl/ssl2012_energysavings_factsheet.pdf
[3]H. J. Round, “A Note on Carborundum,” Electrical World, vol. 49, pp. 309, 1907.
[4]E. F. Schubert, Light Emitting Diodes, Cambridge University Press, 2006.
[5]W. Lu, P. Xie and C. M. Lieber, “Nanowire transistor performance limits and applications,” IEEE Transactions on Electron Devices, vol. 55, pp. 2859, 2008.
[6] F. Qian, S. Gradečak, Y. Li, C. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Letters, vol. 5, pp. 2287, 2005.
[7]M. A. Zimmler, F. Capasso, S. Müller and C. Ronning, ”Optically pumped nanowire lasers: invited review," Semiconductor Science and Technology, vol. 25, pp. 024001, 2010.
[8]B. Tian, T. J. Kempa and C. M. Lieber, “Single nanowire photovoltaics,” Chemical Society Reviews, vol. 38, pp. 16, 2009.
[9]E. C. Garnett, M. L. Brongersma, Y. Cui, and M. D. McGehee, “Nanowire solar cells,” Annual Review of Materials Research, vol. 41, pp. 269, 2011.
[10]V. Dobrokhotov, D. N. McIlroy, M. G. Norton, A. Abuzir, W. J. Yeh, I. Stevenson, R. Pouy, J. Bochenek, M. Cartwright, L. Wang, J. Dawson, M. Beaux and C. Berven, “Principles and mechanisms of gas sensing by GaN nanowires functionalized with gold nanoparticles,” Journal of Applied Physics, vol. 99, pp. 104302, 2006.
[11]K. Wanekaya, W. Chen, N. V. Myung and A. Mulchandani, “Nanowire-based electrochemical biosensors,” Electroanalysis, vol. 18, pp. 533, 2006.
[12]W. L. Wilson, P. F. Szajowski, and L. E. Brus, "Quantum confinement in size-selected, surface-oxidized silicon nanocrystals," Science, vol. 262, pp. 1242-1244, 1993.
[13]N. Mingo, "Thermoelectric figure of merit of II-VI semiconductor nanowires," Applied Physics Letters, vol. 85, pp. 5986-5988, 2004.
[14]S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story, Second ed. Berlin: Springer-Verlag, 2000.
[15]S. Porowski, "Growth and properties of single crystalline GaN substrates and homoepitaxial layers," Materials science & engineering. B, Solid-state materials for advanced technology, vol. B44, pp. 407-413, 1997.
[16]M. E. Levinshteĭn, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, and SiGe. New York: John Wiley and Sons, 2001.
[17]D. I. Florescu, V. M. Asnin, F. H. Pollak, A. M. Jones, J. C. Ramer, M. J. Schurman, et al., "Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy," Applied Physics Letters, vol. 77, pp. 1464-1466, 2000.
[18]J. H. Edgar, Properties, processing and applications of gallium nitride and related semiconductors. London: INSPEC, 1999.
[19]S. O. Kucheyev, J. E. Bradby, J. S. Williams, C. Jagadish, M. Toth, M. R. Phillips, et al., "Nanoindentation of epitaxial GaN films," Applied Physics Letters, vol. 77, pp. 3373-3375, 2000.
[20]H. Morkoç, Nitride Semiconductors and Devices. Berlin: Springer-Verlag, 1999.
[21]D. Zubia and S. D. Hersee, "Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials," Journal of Applied Physics, vol. 85, pp. 6492-6496, 1999.
[22]A. Waag, X. Wang, S. Fundling, J. Ledig, M. Erenburg, R. Neumann, et al., "The nanorod approach: GaN NanoLEDs for solid state lighting," Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, pp. 2296-2301, 2011.
[23]S. Li and A. Waag, "GaN based nanorods for solid state lighting," Journal of Applied Physics, vol. 111, p. 071101, 2012.
[24]M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Munoz, et al., "Effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)," Journal of Crystal Growth, vol. 183, pp. 23-30, 1998.
[25]J. Ristic, E. Calleja, S. Fernandez-Garrido, L. Cerutti, A. Trampert, U. Jahn, et al., "On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy," Journal of Crystal Growth, vol. 310, pp. 4035-4045, 2008.
[26]R. K. Debnath, R. Meijers, T. Richter, T. Stoica, R. Calarco, and H. Luth, "Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)," Applied Physics Letters, vol. 90, p. 123117, 2007.
[27]K. A. Bertness, A. Roshko, L. M. Mansfield, T. E. Harvey, and N. A. Sanford, "Nucleation conditions for catalyst-free GaN nanowires," Journal of Crystal Growth, vol. 300, pp. 94-99, 2007.
[28]K. A. Bertness, A. Roshko, L. M. Mansfield, T. E. Harvey, and N. A. Sanford, "Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy," Journal of Crystal Growth, vol. 310, pp. 3154-3158, 2008.
[29]吳東憲, 以電漿輔助化學氣相沉積法成長氮化鎵奈米柱於光電元件之應用, 國立成功大學化學工程學系博士論文, p.63-p.77, 2012
[30]吳東憲, 以電漿輔助化學氣相沉積法成長氮化鎵奈米柱於光電元件之應用, 國立成功大學化學工程學系博士論文, p.91-p.78, 2012