本論文主要研究鈣鈦礦太陽能電池中的電極界面層，我們致力於將金屬氧化物應用於本實驗室平面異質接面鈣鈦礦太陽能電池（ITO/PEDOT:PSS/CH3NH3PbI3/C60/BCP/Al）。我們選擇氧化鎳（NiOx）替換PEDOT:PSS作為電洞傳輸層，由於和鈣鈦礦能階匹配度高，開路電壓從0.90 V提高到1.01 V，我們證實氧化鎳在通氧氛圍下能提高薄膜品質，進而使元件效率提高到14 %。我們選擇氧化鋅（ZnO）替換富勒烯（C60）作為電子傳輸層，並使用三種製程得到氧化鋅薄膜。使用熱蒸鍍法製備的氧化鋅薄膜得到的鈣鈦礦元件效率達到2.63 %，若加入C60作為阻擋層，元件光電轉換效率提高到4.55 %。此外，使用濺鍍法製備氧化鋅能得到的品質優良的薄膜，但在濺鍍過程中會對鈣鈦礦薄膜造成破壞。在加入阻擋層後，我們得到效率為1.14 %的鈣鈦礦元件。我們認為在加入阻擋層後可緩衝濺鍍過程中對鈣鈦礦薄膜的破壞。

In the past five years, organometal halide perovskite were identified as promising absorbers for solar cells. Although the power conversion efficiencies of perovskite solar cells have rapidly risen to over 20%, there is much room for further improvenment in efficiencies and stability through development of novel materials. Here, we use matel oxide materials, NiOx and ZnO, to substitute PEDOT:PSS and C60 as the hole transport layer and electron transport layer in regular structure planar heterojunction perovskite solar cells. Replacing PEDOT:PSS with NiOx, the efficiencies of devices raised up to over 14%. Replacing C60 with ZnO which was deposited by thermal evaporator, the efficiencies of devices came to be 2.63%. After introducing C60 as a blocking layer, the efficiencies of devices raised up to over 4.55%. We deposited the ZnO films by sputtering and introduced the LiF as the blocking layer because sputtering ZnO film destroyed the perovskite films. We confirmed the blocking layer protected the perovskite layer.

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