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研究生: 李育嘉
Li, Yu-Jia
論文名稱: 對堆疊式晶片構裝疲勞壽命之最佳化探討
Optimal Design of Fatigue Life for Stacked Chip Package
指導教授: 陳榮盛
Chen, Rong-Sheng
學位類別: 碩士
Master
系所名稱: 工學院 - 工程科學系
Department of Engineering Science
論文出版年: 2005
畢業學年度: 93
語文別: 中文
論文頁數: 107
中文關鍵詞: 堆疊錫球多晶片
外文關鍵詞: Stacked, solder, Multi Chip
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  •   為滿足消費性電子產品朝向小型及輕量化與高密度的要求,傳統單晶片封裝(Single Chip Package)已無法滿足需求,封裝體的結構尺寸必須隨之縮小,故能提供具整合性及多功能之多晶片封裝(Multi Chip Package)是未來發展的趨勢。在縮小的電子元件體積的方式上,可利用多晶片堆疊的3D封裝方式,使其具有節省空間以增進電性效能,並提高功能的整合性,而大幅縮小印刷電路版的面積,達到降低成本。但由於封裝結構更趨於複雜化,錫球需承受更多來自於晶片及電路板之間的熱應力,複雜的變形行為可能更容易導致錫球的破壞。

      本研究採用ANSYS 7.0有限元素分析軟體,模擬多晶片堆疊之封裝結構體在熱循環負荷下錫球的熱機械塑性力學行為,並探討晶片之幾何形狀及環氧樹脂成形塑料(Epoxy Molding Compound) 之熱膨脹係數及楊氏係數對錫球壽命之影響,同時進一步導入田口方法,以得到最佳化的構裝。由於國內針對多晶片堆疊之著墨甚少,故本文擬進行深入之參數分析透過本計劃之完成,可提供更完整之堆疊晶片結構設計方法,進而改善錫球的可靠度,提高產品的競爭力。

      In accordance with the requirement of miniature, less weight and high density of electronic products, the traditional single chip package has no longer met the market demand any more. Instead, the scale of package should be reduced. As a result, a stacked chip package with integrated character and multi-functions becomes a favorite trend in the future. For minimizing the volume of the electronic component,the stacked chips with 3 D package can be applied to ensure the advantages of saving space, higher electric performance, higher function integration and less area of printed circuit board so as to reduce production costs. Thus it follows that the package becomes more complicate so that the solder balls are required to endure more thermal stresses existing between the B.T. substrate and the printed circuit board . A complicate deformation may lead to the damage of solder balls easily.

      This study applies the ANSYS 7.0 Finite Element Analytical Software to simulate the viscoplastic behavior of the solder ball for the stacked chip package under the thermal cycling loading. Meanwhile the effects of multi-chip’s geometric shape, the thermal expansion coefficient and the Young’s Modules of the Epoxy Molding Compound on the life of solder balls are discussed. Finally the Taguchi Method is applied to obtain an optimal stacked chip package.

      Acknowledging the lack of domestic related studies on stacked chips, this study expects to conduct the parameters analysis in details. Hopefully, a more complete design measure for the stacked chips can be proposed so as to improve the reliability of the solder ball and upgrade the products competitiveness.

    中文摘要 ………………………………………………………Ⅰ 英文摘要 ………………………………………………………Ⅱ 誌謝 ……………………………………………………………Ⅳ 目錄 ……………………………………………………………Ⅴ 表目錄 …………………………………………………………Ⅷ 圖目錄 …………………………………………………………Ⅹ 符號說明 ………………………………………………………ⅩⅤ 第一章 緒論 ……………………………………………………………1 1-1前言 …………………………………………………………………1 1-2研究動機 ……………………………………………………………2 1-3文獻回顧 ……………………………………………………………2 1-4研究方法 ……………………………………………………………5 1-5章節提要 ……………………………………………………………5 第二章 理論基礎 ………………………………………………7 2-1塑性行為模式 ………………………………………………………7 2-1-1 降伏準則 …………………………………………………8 2-2葛拉佛拉-阿瑞尼阿斯潛變模式 …………………………………9 2-3等向性硬化法則……………………………………………………10 2-4低循環疲勞壽命………………………………………………………11 2-5田口方法………………………………………………………………11 2-5-1信號雜音比 …………………………………………………12 2-5-2 回應表和輔助回應圖 ………………………………………13 2-5-3變異分析……………………………………………………14 2-5-4信賴區間……………………………………………………16 第三章 分析模型之評估 ………………………………………………22 3-1分析模型之建立……………………………………………………22 3-1-1 堆疊式晶片級構裝體模型 …………………………………23 3-1-2 模型之基本假設條件 ………………………………………24 3-1-3 溫度循環負載 ………………………………………………24 3-1-4分析型態與邊界條件 …………………………………………25 3-2分析流程圖…………………………………………………………25 3-3 網格分割與收斂分析 ……………………………………………26 3-4原設計模型於溫度循環負載下之探討……………………………27 3-5晶片黏著狀態之檢視………………………………………………28 第四章 單一因子對錫球疲勞破壞之影響分析 …………………61 4-1 溫度循環負載 ……………………………………………………61 4-2 各因子之水準 ……………………………………………………61 4-3 單一因子之改變 …………………………………………………62 4-4 分析結果與討論 …………………………………………………63 4-5 晶片黏著檢驗 ……………………………………………………67 第五章 田口氏品質工程分析 ………………………………………80 5-1田口方法實驗設計 ………………………………………………80 5-2實驗結果與資料分析 ……………………………………………82 5-2-1 模型實驗結果 ……………………………………………82 5-2-2 模型之變異分析 ………………………………………………83 5-2-3 模型確認實驗 ……………………………………………84 5-3晶片大小配置探討 ………………………………………………86 5-3-1 模型實驗結果 ……………………………………………87 第六章 結論……………………………………………………………98 6-1 結論 ………………………………………………………………98 6-2 未來研究方向……………………………………………………101 參考文獻………………………………………………………………103

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