在本論文中，我們利用有機金屬化學汽相沈積法及分子束磊晶法研製五種以砷化鎵及氮化鎵材料為基礎之高電子移動率場效電晶體。藉由新穎的結構設計、無電鍍沈積法及預植晶種技術，完整的探討其對元件特性之影響，包含直流、熱穩定度、微波及氫氣感測特性…等。實驗結果顯示，所研製的元件展現出良好的元件特性、高溫操作能力及優異氫氣感測能力。而這些優點表示元件適合應用於高速、高頻率、高溫電子電路及氫氣感測電路中。
首先，在砷化銦鋁/砷化銦鎵變晶性高電子移動率電晶體上，選擇砷化銦鋁材料作為蕭特基及緩衝層、高銦含量之砷化銦鎵材料作為通道層及單、雙平面摻雜層作為載子提供層，研究其溫度對元件特性所造成的影響。就寬能隙砷化銦鋁材料而言，能有效地減少高溫下所產生的漏電流。此外，雙平面摻雜層結構的使用，能大幅地增加通道電流密度及二微電子雲濃度。因此，元件在不同溫度環境下皆具有良好的直流、微波特性及熱穩定性。
其次，以低溫無電鍍鈀沈積法研製砷化鋁鎵/砷化銦鎵/砷化鎵擬晶性高電子移動率電晶體及砷化銦鋁/砷化銦鎵變晶性高電子移動率電晶體。藉由低溫與低能量的沈積特性，可減少表面熱破壞及表面態位密度，在鈀/砷化鋁鎵及鈀/砷化銦鋁間形成良好的蕭特基接面。從實驗的結果發現，與蒸鍍閘極元件比較，無電鍍閘極元件顯示優異的直流特性。另外，亦探討不同溫度環境下無電鍍沈積法對元件特性所造成的影響。
最後，以敏化、活化、無電鍍鈀及鉑研製氮化鋁鎵/氮化鎵高電子移動率電晶體。利用敏化及活化方式不僅大幅降低無電鍍沈積時間且可形成更均勻且緻密的無電鍍金屬層。因此，預期能改善元件之直流、微波及氣體感測等特性。此外，所研製之元件在較大的溫度範圍內(300-600 K)有較低的溫度變化率及較佳的熱穩定性。

In this thesis, five different GaAs- and GaN- based high electron mobility transistors (HEMTs), grown by a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) system, are fabricated and studied. Through the newly designed structure, electroless plating (EP) deposition approach, and pre-seeding metal seeds approach, the device characteristics including the DC, thermal stability, microwave, and hydrogen detection performance are investigated. Experimentally, the studied devices show good device characteristics, high temperature operation capability, and excellent hydrogen detection ability. These advantages suggest that the proposed devices are suitable for high-speed, high-frequency, high-temperature electronics devices and hydrogen gas sensor applications.
First, the InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs), using InAlAs Schottky and buffer layers, In-rich InGaAs channel layer, and single and double δ-doped structure, are studied and demonstrated. For promising wide-gap InAlAs material, the leakage current could be effectively reduced at higher temperature. Moreover, due to the employed of double δ-doped structure, the current density in the channel and two-dimensional electron gas could be effectively increased. Hence, the studied device shows well DC, microwave, and thermal stability with wide operation region.
Second, the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) and the InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs), using an electroless plating (EP) palladium (Pd) deposition approach, are studied and investigated. Based on the low-energy and low-temperature deposition conditions, the Pd/AlGaAs and Pd/InAlAs Schottky interface suffers less thermal damages and surface states. Experimentally, as compared with thermal evaporating (TE) gate device, the EP-gate device exhibits better DC performance. In addition, the temperature-dependent characteristics of the studied devices are examined at different temperatures.
Finally, the AlGaN/GaN high electron mobility transistors (HEMTs), with sensitization, activation, and electroless plating (EP) of palladium (Pd) and platinum (Pt) deposition approaches, are fabricated and systematically studied. The employed sensitization and activation approaches could be not only reduced the deposition time of EP but also formed the uniform and dense EP metal film. Therefore, the improvement of device performance in terms of DC, microwave, thermal stability, and gas sensing could be expected. Moreover, the lower temperature variation rate and well thermal stability of device performance over wide temperature range (300 ~ 600 K) are obtained.

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