目前的照明設備，多數會產生熱及污染等的問題，因此開發具有無水銀污染、發光效率高等優點之半導體發光二極體為必然趨勢。本研究構想製作量子點型的發光二極體，利用量子點本身高效能的發光，期待可藉由量子侷限效應在可見光譜的發光波長內調控發光顏色。
本論文分成二個部分，首先以微波法配合化學水浴沈積法以簡單快速的製備硫化鎘薄膜，再利用高溫爐做熱處理，並分別針對熱處理的溫度、時間作討論，以期待能夠達到P-N 結的效果。再者以微波法製備硫化鎘微粒作為旋轉塗佈的溶液，試著利用旋轉塗佈法製備硫化鎘半導體薄膜，並分別討論旋轉塗佈中塗佈溶劑、溶液濃度、初轉轉速、初轉時間與末轉轉速對於薄膜均勻度的影響，並對薄膜做光譜、組成、表面形態和UV燈光照射產生螢光等分析。
本研究發現隨著熱處理溫度的上升PL光譜、結晶性與電性結構都會有明顯的變化，於200-300oC變化最為明顯，且熱處理溫度對於薄膜的影響大於熱處理時間的影響。並成功的找到旋轉塗佈法的最佳條件，以製備出一層均勻的硫化鎘薄膜。

Light-emitting diodes (LEDs) have the advantages of no mercury pollution and high emission efficiency. Developments of LEDs not only serve to improve the disadvantages of traditional illuminants but also save the energy and protect the environment of the world. This research is aimed at the manufacture of quantum dot (QD) LED, make use the high luminescence efficiency and limit the quantum confinement effect to control the luminescence color of QD
In this study, CdS quantum dots are synthesized by microwave method. The effect of annealing temperature and time on CdS thim films synthesized by chemical bath deposition were investigated. The nanostructure and crystallization of the thin films were analyzed by means of XRD, Raman and SEM. In addition, the optical properties were measured by PL and UV. A annealing at 200-300oC for 30 minutes was found to be the optimum annealing condition for the preparation of P-N Junction.
The QD CdS thin films were rapidly deposited on ITO substrate by spin coating method using QD dispersed on n,n-dimethylformamide (DMF) solution. The influences of spin coating solvent, solution concentration, spin speed and spin time were investigated. A relatively high surface coverage and uniform monlayer films of CdS particles from the center to the edge of the substrate was achieved by the appropriate preparation parameters.

[1]孫培真，”新世代節能環保照明” ，生活科技教育月刊 (2005)38.
[2] M. George Craford, MRS bulletin, 25(10) (2000) 27.
[3] N. Holonyak Jr. and S. F. Bevaqua, Appl. Phys. Lett., 1(4) (1962) 82.
[4] M. George Craford, Circuits and Devices-IEEE, 8(5), (1992)24.
[5] N. Savage, Technology Review, 103(5) (2000) 38.
[6]陳澤澎，“發光二極體的發展及新應用”，工業材料123 (1997) 74.
[7] N. Holonyak, Jr., S. F. Bevacque, C. V. Bielan, and J. Lubowski, Appl. Phys. Lett., 3(3) (1963) 1.
[8] D. G. Thomas, J. J. Hopfield, and C. J. Frosch, Phys. Rev. Lett., 15(22) (1965) 857.
[9] M. J. Chou, D. C. Tsui, and G. Weimann, Appl. Phys. Lett., 47(6)(1985)609.
[10] M. A. Haase, J. Qiu, J. M. Depuyde, and H. Cheng, Appl. Phys. Lett., 59(11) (1991) 1272.
[11] Nakamura, Kitamura, H. Umeya, A. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi, Electronics Lett., 34(25)(1998) 2435¬¬¬.
[12] A. Ishibashi, J. Crys. grow., 159 (1996) 555.
[13] S.M.Sze,”Physics of Semiconductor Device,” Wiley Interscience Publication,New York,(1981).
[14] Landholt-Boernstein (1982).
[15] J. E. Macintyre(executive editor), F. M. Daniel, V. M. Stirling(assistant editors), Dictionary of Inorganic Compounds-Chemical Database ,1st Editions, Published by Charpman and Hall(1992).
[16] A. N. Goldstein, C. M. Echer, A. P. Alivisatos, Science, 256 (1992) 1425.
[17] K. P. Jain, Physics of Semiconducting Nanostructures, Narosa Publication, (1997)25.
[18] J. Nanda, B. A. kuruvilla, K. V. P. Shafi, D. D. Sarma, Phys. Rev. B, 59 (1999) 7473.
[19] A. D. Yoffe, Adv. Phys., 42 (1993) 173.
[20] M. E. Wozniak, and A. Sen, Chem. Mater., 4 (1992) 753.
[21] Y. Wang and N. Herron, J. Phys. Chem., 91 (1987) 257.
[22] C. Petit, P. Lixon, and M. P. Pileni, J. Phys. Chem., 94 (1990) 1598.
[23] N. Herron, Y. Wang, H. Eckert, J. Am. Chem. Soc., 112 (1990) 1322.
[24] T. Vossmeyer, L. Katsikas, M. Giersig, I. G. Popovic, K. Diesner, A. Chemseddine, A. Eychmuller, and H. Weller, J. Phys. Chem., 98 (1994) 7665.
[25] M. L. Steigerwald, A. P. Alivisatos, J. M. Gibson, T. D.Harris, R. Kortan, A. J. Muller, A. M. Thayer, T. M. Duncan, D. C. Douglass, L. E. Brus, J. Am. Chem. Soc., 110 (1988) 3046.
[26] R. Rossetti, J. L. Ellison, J. M. Gibson, L. E. Brus, J. Chem. Phys., 80(9) (1984) 4464.
[27] T. Gacoin, K. Lahlil, P. Larregaray, and J-P. Boilot, J. Phys. Chem. B, 105 (2001) 10228.
[28] R. Reisfeld, J. Alloys and Compounds, 341 (2002) 56.
[29] C. B. Murray, D.J. Norris, M.G. Bawendi, J. Am. Chem. Soc., 115(1993)8706.
[30] Mike. Lazell, Paul O’Brien, J. Mater. Chem., 9 (1999) 1381.
[31] S. Komarneni, R. Roy, Q. H. Li, Mater. Res. Bull. 27(12), (1992)1393.
[32] Christopher. C. Landry, Jason Lockwood, and Andrew R. Barron, Chem. Mater. 7, (1995)699.
[33] J. Zhu, O. Palchik, S. Chen, and A. Gedanken, J. Phys. Chem. B 104, (2000)7344.
[34] Y. Wada, H. Kuramoto, J. Anand, T. Kitamura, T. Sakata, H. Mori, and S. Yanagida, J. Mater. Chem. 11, (2000)1936.
[35] J. J. Zhu, M. G. Zhou, J. Z. Xu, X. H. Liao, Mater. Lett. 47, (2000)25.
[36] X. H. Liao, J. J. Zhu, H. Y. Chen, Mater. Sci. Eng. B 85, (2001)85.
[37] H. Uda, H. Yonezawa, Y. Ohtsubo, M. Kosaka, H. Sonomura, Sol. Energy Mater. Sol. Cells, 75 (2003) 219.
[38] H. Uda, T. Hujii, S. Lkegami, and H. Sonomura, Proceedings of the 26th IEEE PVSC, (1997)523.
[39] K. Senthil, D. Mangalaraj, Sa. K. Narayandass, R. Kesavamoorthy, G. L. N. Reddy, Nucl. Instr. and Meth. in Phys. Res. B., 173 (2001) 475.
[40] K.El Assali, M. Boustani, A. Khiara, T. Bekkay, A. Outzourhit, E. L. Ameziane, J. C. Bernede, and J. Pouzet, Phys. Stat. Sol., 178 (2000) 701.
[41] H. Ashour, K.El Assali, Phys. Stat. Sol., 184 (2001) 175.
[42] E. Cordoncillo, P. Escribano, G. Monros, M. A. Tena, V. Orera, and J. Carda, J. Solid State Chem., 118 (1995) 1.
[43] S. Gorer, G. Hodes, Y. Sorek, R. Reisfeld, Mater. Lett., 31 (1997) 209.
[44] E. J. Dawnay, M. A. Fardad, Mino Green, and E. M. Yeatman, J. Mater. Res., 12 (1997) 3115.
[45] S. M. Song, S. Y. Choi, J. Non-Cryst. Solids, 291 (2001) 50.
[46] S. Coe, W. K. Woo, M. Bawend, and V. Bulovic, Nature, 420 (2002) 800.
[47] D. B. Mitzi, L. L. Kosbar, C. E. Murray, M. Copel, and A. Afzali, Nature, 428 (2004) 299.
[48] Z. Y. Pan, X. G. Peng, T. J. Li, J. Z. Liu, Appl. Sur. Sci., 108 (1997) 439.
[49] P. Facci, V. Erokhin, A. Tronin, and C. Nicolini, J. Phys. Chem., 98(1994) 13323.
[50] Y. H. Ma and R. H. Bube, J. Electrochemical Soc., 124 (1977) 1430.
[51] C. H. Chen, M. H. J. Emond, E. M. Kelder, B. Meester, and J. Schoonman, J. Aerosol Sci., 30 (1999) 959.
[52] S. Leeuwenburgh, J. Wolke, J. Schoonman, and J. Jansen, J. Biomedical Mater. Res. A, 66 (2003) 330.
[53] A. A. van Zomeren, E. M. Kelder, J. C. M. Marijnissen, and J. Schoonman, J. Aerosol Sci., 25 (1994) 1229.
[54] M. Danek, K. F. Jensen, C. B. Murry, and M. G. Bawendi, J. Crys. Grow., 145 (1994) 714.
[55] B. Su and K. L. Choy, Thin Solid Films, 361 (2000) 102.
[56]鄭士豪，“微波法製備CdS和CdSe量子點及電噴霧法製備P-N Type發光膜之研究”，國立成功大學碩士論文 (2006).
[57] R. A. Pearman，陳世昌 譯，“固態工業電子學”，東華書局(1986).
[58] B. G. Streetman and S. Banerjee, Solid state electronic devices, 5th Editionm, NJ:Prenticce Hall(2000).
[59] M. V. Artemyev，S. V. Gaponenko, I. N. Germanenko, A. M. Kapitonov, Chem. Phys. Lett., 243 (1995) 450.
[60] A.P.Alivisatos,Science,271(1996)933.
[61] N. M. Park, T. S. Kim, and S. J. Park, Appl. Phys. Lett., 78 (2001) 23.
[62] J. H. Davies, The physics of low-dimensional semiconductors, Published by the Press Syndicate of the University of Cambridge, (1998) p.1-3, 13, 46, 107.
[63] R. Rossetti, R. Hull, J. M. Gabson, and L. E. Brus, J. Chem. Phys., 83 (1985) 1406.
[64] L. E. Brus, J. Chem. Phys., 79 (1983) 5566.
[65] L. E. Brus, J. Chem. Phys., 80 (1984) 4403.
[66] L. Brus, J. Quantum Electronics, 22 (1986) 1909.
[67] H.M.Kingston,Stephen J.Haswrll, Microwave-Enhanced .Chemistry.,Chapter1,3-54,American Chemical Society,Washington(1997)
[68] J. C. Jansen, A. Arafat, A. K. Barakat, H. Van Bekkum, Synthesis of Microporous Materials, 1 (1992) 507.
[69] A. Arafat, J.C. Jansen, A.R. Ebaid, H.V. Bekkum, Zeolites, 13(1993)162.
[70] C. G. Wu, T. Bein, Chem. Commun., (1996) 925.
[71] S. Zijlstra, T. J. de Groot, L. P. Kok, G. M. Visser, W. Vaalburg, J. Org. Chem., 58 (1993) 1643.
[72] M. D. Taylor, A. D. Roberts, R. Nickels, J. Nucl. Med. Biol.,23 (1996)605.
[73] D. Patil, B. Mutsuddy, R. Grrard, J. Microwave Power Electromagn. Eng., 27 (1992) 49.
[74] C. C. Landry, A. R. Barron, Science, 260 (1993) 1653.
[75] S. Komarneni, R. K. Rajha, H. Katuki, Mater. Chem. Phys., 61(1999) 50.
[76] R. Hicks, G. Majetich, J. Microwave Power Electromagn. Eng., 30(1995)27.
[77] R. A. Abramovitch, Org. Prep. Proc. Int., 23 (1991) 283.
[78] R. N. Gedye, W. Rank, K. C. Westaway, Can. J. Chem., 69 (1991) 706.
[79] T. R. J. Dinesen, M.Y. Tse, M. C. Depew, J. K. S. Wan, Res. Chem. Intermed., 15 (1991) 113.
[80] J. R. J. Pare, J. M. R. Belanger, S. S. Stafford, Trends Anal. Chem., 13 (1994) 176.
[81] G. Bond, R.S. Moyes, D. A. Whan, Catal. Today, 17 (1993) 429.
[82] A. G. Saskia, Chem. Soc. Rev., 26 (1997) 233 .
[83] W. Yuji, K. Hiromitsu, S. Takao, M. Hirotaro, S. Takayuki, K. Takayuki, Y. Shozo, Chem. Lett., 7 (1999)607.
[84] D. L. Boxall, G. A. Deluga, E. A. Kenik, W. D. King, C. M. Lukehart, Chem. Mater., 13 (2001) 891.
[85] K. W. Gallis, C. C. Landry, Adv. Mater., 13 (2001) 23.
[86] A. Cirera, A. Vila, A. Dieguez, A. Cabot, A. Cornet, J.R. Morante, Sensors Actuators B, 64 (2000) 65.
[87] D. L. Boxall, C. M. Lukehart, Chem. Mater., 13 (2001) 806.
[88] (a) O. Palchik, J. J. Zhu, A. Gedanken, J. Mater. Chem., 10 (2000) 1251; (b) O. Palchik, R. Kerner, J.J. Zhu, A. Gedanken, J. Solid State Chem., 154 (2000) 530; (c) O. Palchik, S. Avivi, D. Pinkert, A. Gedanken, Nanostruct. Mater., 11 (1999) 41; (d) J.J. Zhu, O. Palchik, S.G. Chen, A. Gedanken, J. Phys. Chem. B, 104 (2000) 7344.
[89] J. A. Ayllon, A. M. Peiro, L. Saadoun, E. Vigil, X. Domenech, J. Peral, J. Mater. Chem., 10 (2000) 1911.
[90] (a) X. H. Liao, J. M. Zhu, J. J. Zhu, J. Z. Xu, H. Y. Chen, Chem. Commun., (2001) 937; (b) J. J. Zhu, J. M. Zhu, X. H. Liao, J. L. Fang, M. G. Zhou, H. Y. Chen, Mater. Lett., 53 (2002) 12; (c) X. H. Liao, J. J. Zhu, W. Zhong, H. Y. Chen, Mater. Lett., 50 (2001) 341.
[91] W. Tu, H. Liu, J. Mater. Chem., 10 (2000) 2207.
[92] J. C. Jansen, A. Arafat, A. K. Barakat, H. Van Bekkum, Synthesis of Microporous Materials, 1 (1992) 507.
[93]張振昌，“化學水浴沈積法成長硫化鎘薄膜之研究”，國立中山大學碩士論文 (2006).
[94]薛永浚，“不同升溫條件對真空蒸鍍熱氧化法製備氧化鎵薄膜形態及感測特性之研究”，國立成功大學碩士論文 (2006).
[95]劉旂甫，“水及正丁醇蒸氣在TiO2(6-12nm)與甘露糖(8-25nm)電與中性微粒上之非均勻相核凝”，國立成功大學碩士論文 (2006).
[96]Moreau,W.M.,Semiconductor Lithography, Plenum Press,New York(1988).
[97]A.G. Emslie, F.T. Bonner, L.G. Peck, Flow of a viscous liquid on a rotating disk, J. Appl. Phys. 29 (1958) 858–862.
[98]Bornside,D.E.,Macosko, C.W., and Scriven, L.E.,"0n the Modeling of Spin Coating",J﹒Imaging Tech., Vol.13 (1987) pp.122-130﹒
[99]Daughton,W.J﹒and F.L. Givens, "On the uniformity of films:a new technique applied to polyimides",J. Electrochem.Soc.,Vol.126 (1979) pp.269-276﹒
[100] ETEC 1120 Electro-Principles1”Solid State Principals-Atomic Theory”.
[101] M.G.Burt,”The Justification for Applying the Effective-mass. Approximation to Microstuctures “,J.Phy.Condens.Matter, 4 (1992) 6651-6690
[102] B. D. Cullity, “Elements of X-Ray Diffraction” 2th Edition, Published by Addison-Wesley(1978).
[103] H. Metin, R. Esen, “Annealing studies on CBDgrown CdS thin films”258(2003)141.
[104] A. Henglein, Chem. Rev., 89 (1989) 1861.
[105] L. Spanhel, M. Haase, H. Weller, A. Henglein, J. Am. Chem. Soc., 109 (1987) 5649.
[106] R. He et al., Colloids and Surfaces A: Physicochem. Eng. Aspects, 220 (2003) 151.
[107]林全雯，”微波法製備硫化鎘奈米微粒及電噴霧法製備硫化鎘薄膜及光電性質之研究”，國立成功大學碩士論文 (2005).
[108]黃緯苓，”電噴霧法製備硫化鎘及光電性質之研究”，國立成功大學碩士論文 (2004).
[109]Zahn, D. R. T.; Maierhofer, Ch.; Winter, A.; Reckzugel, M.; Srama, R.; Thomas, A.; Horn, K.; Richter, W. J. Vac. Sci. Technol. B, 9 (1991) 2206.
[110]V. Sivasubramanian, A. K. Arora, M. Premila, Physical. E, 31(2006)93.
[111]Takashi Ogi , Luis Balam Modesto-Lopez , Ferry Iskandar , Kikuo Okuyama, Colloids and Surfaces A: Physicochem. Eng. Aspects,297(2007)71.
[112]A.G. Emslie, F.T. Bonner, L.G. Peck, Flow of a viscous liquid on a rotating disk, J. Appl. Phys. 29 (1958) 858–862.