本論文旨在以濺鍍法製備傳統氧化矽鋅錫(SiZnSnO, SZTO)薄膜電晶體(thin film transistors, TFTs)，並結合背通道圖案化蝕刻製程與p-型氧化鎳(Nickel oxide, NiO)覆蓋層(capping layer, CL)適化結構設計，以研發具優異光電特性NiO CL/背通道圖案化蝕刻SZTO TFTs，並作為紫外光感測器(ultraviolet photodetectors, UV-PDs)之應用。為改善傳統TFTs使用極薄通道厚度(T_ch)達通道全空乏訴求所衍生低截止電流(I_off)與低光電流(I_ph)之折衷關係，本研究於提升T_ch前提下，藉由適化地背通道圖案化蝕刻製程以降低部分區域T_ch，使蝕刻後厚度(T_chf)維持通道全空乏狀態以抑制I_off亦透過兩側未蝕刻區域之較厚T_ch實現較佳薄膜品質、優異元件電性與較高I_ph等優勢。另外，結合NiO CL結構(包括CL長度(L_CL)與厚度(T_CL))於背通道圖案化蝕刻SZTO TFTs之蝕刻區域進行覆蓋所形成pn異質接面(heterojunction, HJ)，可增加SZTO背通道約10 nm的空乏深度以進一步降低通道有效厚度(T_che)，同時於UV照光下可於pn HJ空乏區產生額外大量光生載子，經由空乏區內建電場有效分離並將光生電子驅至通道，更進一步造成I_ph增大，使元件具有較佳之電性與光感測性能。
本論文研究內容主要分為「背通道圖案化蝕刻SZTO TFTs靜電與光感測特性分析」、「具調變NiO CL結構之背通道圖案化蝕刻SZTO TFTs與FED靜電特性及紫外光感測特性分析」與「紫外光感測器可靠度分析」等三大部分，茲依序分述如下：
第一部分於「背通道圖案化蝕刻SZTO TFTs靜電與光感測特性分析」之研究上，為釐清T_ch於有無背通道圖案化蝕刻TFTs元件之靜電特性及光感測特性之影響，本研究於傳統SZTO TFTs上，製備出具T_ch=30、60、80與120 nm (分別定義為Type A-30、60、80與120 TFTs)；於背通道圖案化蝕刻SZTO TFTs上，使用濕式蝕刻法於Type A-60、80與120 TFTs元件背通道表面進行T_chf= 30 nm之圖案化蝕刻(分別定義為Type B-60(30)、80(30)與120(30) TFTs)。實驗結果顯示，於所製備傳統SZTO TFTs元件中，Type A-30 TFT於熱平衡時處於全空乏狀態(V_on=0.06 V/V_th=0.29 V)，並呈現出I_on=0.93×〖10〗^(-4) A、I_off=4.3×〖10〗^(-12) A、I_on⁄I_off =2.1×〖10〗^7、μ_FE=24.1 cm^2⁄(V∙s)與R_ch=5.11 kΩ之靜電特性。隨著T_ch之提升，V_on呈現出向左偏移之趨勢，通道層由全空乏轉變為部分空乏狀態，雖然獲得較高的I_on與μ_FE且R_ch降低之效益，但相對亦使I_off大幅增加，而呈現較低I_on⁄I_off 。
於背通道圖案化蝕刻SZTO TFTs上，Type B-100(30) TFT亦呈現出通道全空乏狀態(V_on=0.02 V/V_th=0.24 V)以及I_on=1.35×〖10〗^(-4) A、I_off=5.8×〖10〗^(-12) A、I_on⁄I_off =2.3×〖10〗^7、μ_FE=27.2 cm^2⁄(V∙s)與R_ch=3.58 kΩ之優異靜電特性，相較於Type A-30 TFT，透過蝕刻製程使T_chf維持於通道全空乏狀態所需之厚度下，藉由兩側T_ch增厚以降低R_ch並提升I_on與μ_FE。於紫外光感測特性上，Type A-30 TFT受限於較薄之T_ch以抑制I_off，在275 nm波長照射下之R_ph、S_ph與D^*僅分別為6.51 A⁄W、7.6×〖10〗^4 A⁄A與1.24×〖10〗^14 Jones；隨著T_ch之提升，R_ph受到T_ch增加而有所提升，但相對的I_off大幅提升，使得S_ph與D^*皆呈下降趨勢。相較於Type A-30 TFT，Type B-100(30) TFT藉兩側T_ch增厚且T_chf維持與全空乏狀態相近之I_off下，於275 nm波長照射下，呈現出較佳之R_ph、S_ph與D^*分別為72.4 A⁄W、6.2×〖10〗^5 A⁄A與1.2×〖10〗^15 Jones。
第二部份於「具調變NiO CL結構之背通道圖案化蝕刻SZTO TFTs與FED電性及紫外光感測特性分析」之研究上，為探討NiO CL結構之L_CL與T_CL於元件靜電及光感測特性之影響，本項研究以Type B-100(40) TFT為平台，於背通道圖案化蝕刻區域表面沉積T_CL= 80 nm與L_CL= 10、20、30與40 μm之NiO CL (分別定義為Type C-10/80、20/80、30/80與40/80 TFTs)。實驗結果顯示，於所製備之具NiO CL SZTO TFTs中，相較於Type B-100(30) TFT，Type C-10/80 TFT呈現出通道全空乏狀態(V_on=0.01 V/V_th=0.23 V)及I_on=1.38×〖10〗^(-4) A、I_off=6.0×〖10〗^(-12) A、I_on⁄I_off =2.3×〖10〗^7、μ_FE=27.6 cm^2⁄(V∙s)之靜電特性。隨著L_CL由10 μm增長至40 μm，V_on整體呈現向右偏移之趨勢，使得I_off些微降低外，I_on與μ_FE亦受到R_ch增大而降低，從而呈現出較低I_on⁄I_off 。於紫外光感測特性方面，隨著L_CL增長，藉由pn HJ於照光後所產生之|∆V_th |，使I_ph大幅提升亦使R_ph、S_ph與D^*提升；但相對地，L_CL=40 μm時，R_ph、S_ph與D^*皆呈現下降趨勢，可歸因於受到R_ch增大以及過長L_CL造成通道窄化之影響，使得I_ph降低。於所調變之NiO CL 結構中，L_CL=30 μm時，呈現出較佳之光感測特性，再分別以不同T_CL進行靜電與光感測特性之探討。實驗結果顯示，T_CL=60 nm時，說明pn HJ於通道層內所形成之空乏深度已初步能有效抑制I_off；於T_CL=80與100 nm時，整體元件靜電特性不再變化，可歸因於pn HJ所形成之空乏深度已達飽和。於紫外光感測特性上，隨T_CL增厚，I_ph受到光吸收區域之增加而提升，亦使R_ph、S_ph與D^*提升；但相對地，T_CL=100 nm時，R_ph、S_ph與D^*皆呈現下降趨勢，可歸因於過厚T_CL使大部分光生載子都被NiO中性區所吸收掉，使得I_ph降低。於所製備之元件中，Type C-30/80 TFT，於275 nm波長照射下呈現出最適化之R_ph、S_ph與D^*分別為1972 A⁄W、1.9×〖10〗^7 A⁄A與3.4×〖10〗^16 Jones；基於最適化Type C-30/80 TFT所製備之FED，實驗結果顯示，於靜電特性上呈現出I_F=1.03×〖10〗^(-4) A、I_R=5.4×〖10〗^(-12) A、RR=1.9×〖10〗^7之優異整流特性。於紫外光感測特性上，相較於Type C-30/80 TFT，Type C-30/80 FED於275 nm波長照射下呈現出R_ph、S_ph與D^*分別為1800 A⁄W、1.7×〖10〗^7 A⁄A與3.1×〖10〗^16 Jones。FED照光下，可歸因於操作偏壓上與TFT之差異(TFT：V_G=V_on；FED：V_D=-1.5 V)，於光感測特性上略低於TFT。
第三部分為「紫外光感測器可靠度分析」之研究，以第一部分之通道全空乏狀態之TFT與第二部分具調變CL之紫外光感測元件進行可靠度比較。主要藉由負偏壓應力測試其光感測之穩定度，以及使用週期性(T = 10 s) UV光照射(λ=275 nm, P_in=1.25 mW/cm^2)測試其動態光響應行為。實驗結果顯示，相較於Type A-30 TFT，Type C-30/80 TFT，於1000 s之負偏壓應力測試時間下，呈現出較佳之臨界電壓(ΔV_th)與汲極電流(ΔI_D)偏移量分別為ΔV_th=-112 mV及ΔI_D=3.95 A⁄A；Type C-30/80 FED與對應的TFT相比，具較低之汲極電流偏移量(ΔI_D=2.01 A⁄A)，可歸因於FED所採用之偏壓條件，使垂直方向的平均電場降低，從而於∆I_D上呈現較佳穩定性。於週期性動態光響應測試下，實驗結果顯示Type A-30 TFT與Type C-30/80 TFT，經由正規化換算其第一週期之上升(τ_r)/下降(τ_f)時間分別為0.76/1.55與0.93/3.04 s，均存在著明顯PPC效應。為有效降低PPC效應對光感測特性之影響，採用施予一閘極脈衝(V_G=4 V)的方式，藉元件處於導通狀態之高導通電流，透過外部電路將殘餘光生電子清除，實驗結果顯示，Type A-30 TFT與Type C-30/80 TFT之τ_f均分別降至0.31與0.38 s。
本論文以具優異電特性之Hf0.82Si0.18O2/SZTO TFT元件作為平台，提出以濺鍍法配合背通道蝕刻製程製備下閘極結構NiO CL/SZTO TFTs之UV PDs，透過調變SZTO通道厚度及NiO CL結構參數獲得元件光感測特性較佳之最適化結構參數。實驗結果顯示，Type C-30/80 TFT於275 nm波長照射下呈現出最佳之R_ph、S_ph與D^*分別為1972 A⁄W、1.9×〖10〗^7 A⁄A與3.4×〖10〗^16 Jones，證實NiO CL有助於改善UV-PDs光感測特性且利用背通道蝕刻製程以減緩I_off與I_ph之折衷關係。本論文所提NiO CL/SZTO TFTs與FEDs於光感測應用領域具有創新性與發展潛力。

The use of a thick channel layer (T_ch) with a patterned etching region and a NiO capping layer (CL) thereon to release the trade-off between the dark current (I_dark) and photo current (I_ph) of SZTO TFT-based UV photodetector is demonstrated. The influences of the T_ch and final thickness (T_chf) after patterned etching, and NiO CL on the optoelectrical properties of SZTO TFTs are investigated. Experimental results show that the 100-nm-thick SZTO TFT with a T_chf of 40 nm and a NiO CL shows an excellent R_ph and S_ph up to 1972 A/W and 1.9×〖10〗^7 A/A under UV irradiation at 275 nm, which are about 303 and 251 times larger than the conventional 30-nm-thick SZTO TFT. It’s attributed to the use of a thick T_ch and the formation of NiO CL/SZTO pn heterojunction maximize the harvest of photogenerated carriers to cause more negative 〖ΔV〗_th of TFT to boost I_ph under UV irradiation, in addition, a thin effective Tch obtained from the local etching together with NiO CL is very effective for lowering I_dark. Note that type B-100(40)-CL TFT indicates a 2-fold decrease in ∆V_th than the type A-30 TFT after NBS for 1000s, attributing to the thickening channel layer could reduce the trap density, in addition, the type B-100(40)-CL FED demonstrate better stability with a lower variation of the drain current (∆I_D) as compared with the corresponding TFT, which due to the low average dieletric electrical field intensity in FED. It expected that the proposed NiO CL/patterned etching/SZTO TFT will have consuderable potential for advanced UV-PDs applications.

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