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研究生: 林柏年
Lin, Bo-Nian
論文名稱: 利用減緩短期檔案的資料保留時間來提升非揮發性記憶體檔案系統之性能
Exploiting Retention Relaxation on Short-lived Files for Improving NVM File System Performance
指導教授: 張大緯
Chang, Da-Wei
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 資訊工程學系
Department of Computer Science and Information Engineering
論文出版年: 2019
畢業學年度: 108
語文別: 英文
論文頁數: 37
中文關鍵詞: 非揮發性記憶體相變化記憶體減緩資料保留時間短期檔案
外文關鍵詞: Nonvolatile memory file system (NVMFS), phase-change memory, retention relaxation, short-lived file
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  • 近年來,非揮發性隨機存取記憶體(Non-Volatile Random Access Memory, NVRAM),例如相變化隨機存取記憶體(Phase-change random access memory, PCM)等技術蓬勃發展,與傳統主記憶體所使用的DRAM相比,這些NVRAM不會因斷電即造成資料流失。除了有潛力取代DRAM或擴充DRAM之外,NVRAM的高密度與非揮發性之優勢也使其可以用來作為儲存裝置以儲存檔案系統資料。其出現讓傳統儲存架構之主記憶體與儲存裝置間的階層界線趨於模糊,使得現有之檔案系統在設計上需重新針對非揮發性記憶體之特性做更進一步的考量。從而促使了非揮發性記憶體檔案系統的誕生。然而,與DRAM相比,NVRAM的寫入延遲仍有一大段差距,非揮發性記憶體檔案系統之效能也受限於NVRAM的寫入延遲而造成效能低落。因此,本論文提出了利用減緩短期檔案的資料保留時間來改善非揮發性記憶體之寫入速度的方法。方法中,我們利用Multilevel Cell (MLC) PCM可以依據資料保留時間而選擇速度不同的寫入方式此一特性。例如,資料保留時間較長則寫入延遲時間也較長。反之,資料保留時間較短則寫入延遲時間較短。並找出生命週期相對較短的檔案,對其使用短期的資料保留時間之寫入方式,以期望改善系統整體存取記憶體之效能。
    實驗中,我們的方法與對照組相比,有效的達成了平均10.61% 的記憶體存取速度改善,並且達成了平均79.83%的記憶體壽命改善.

    Byte-addressable nonvolatile memory (NVM), which has a reading speed equivalent to dynamic random access memory (DRAM) and enables persistent data storage, has become a promising technology. Meanwhile, file systems for byte-addressable NVM (NVMFSs) have been proposed in recent years. However, the write latency of NVM is higher than that of DRAM. This high latency degrades the overall file access speed when write-intensive programs are involved. Previous studies have shown that the write latency of NVMs can be minimized by conducting retention relaxation of multilevel-cell (MLC) NVM. For example, in phase-change memory, a write operation that has a high number of set iterations offers high retention capability and high write latency. Moreover, a write operation with few set iterations offers low retention capability and low write latency. Hence, the average memory access latency of an NVMFS can be improved by relaxing the retention capability of file data. However, the use of a short-term retention write operation for all data causes frequent refreshing of the data, which degrades the bandwidth performance and lifetime of NVM memory. Therefore, a balance should be provided between the retention capability and write speed of MLC NVM.
    In this paper, we observed that programs often generate short-lived files. These files only require a short-term retention capability in an NVMFS. According to this observation, a short-lived file manager (SFM) is proposed in this study to pick up short-lived files and perform short-term retention writing operations for these files. The results of this study reveal that the SFM improves the average memory access latency of each workload in the system by up to 19.8% (10.61% on an average) and increases the memory lifetime by up to 127.42% (79.83% on an average) compared to the baseline.

    摘要 I ABSTRACT II 致謝 III CONTENT IV LIST OF TABLES V LIST OF FIGURES VI Chapter 1 INTRODUCTION 7 Chapter 2 RELATED WORK 11 2.1 Retention relaxation in Cache-level Memory 11 2.2 Retention relaxation in Storage-level Memory 11 2.3 Retention relaxation in Main memory-level Memory 12 Chapter 3 MOTIVATION 14 3.1 Existence of Short-lived File 14 3.2 Trade-off between Write-latency and Retention 15 3.3 Ineffectiveness of State-of-the-Art Solutions 17 Chapter 4 DESIGN 19 4.1 Overview of the SFM 19 4.2 Request Interceptor 20 4.3 Retention Time Predictor 20 4.4 Retention Manager 21 4.5 Access Flow 22 4.6 Implementation of the SFM on PMFS 25 4.7 Miss Prediction penalty 27 Chapter 5 PERPFRMANCE EVALUATION 28 5.1 Simulation Environment 28 5.2 Effectiveness of SFM 30 5.3 Power Limitation 33 Chapter 6 CONCLUSION AND FUTURE WORK 35 REFERENCES 35

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