薄膜製程方式有許多種，薄膜微結構在複雜沉積過程中，大多會與基板介面處產生殘留應力，應力過大時容易造成機板彎曲變形而導致薄膜破裂損壞，因此準確評估薄膜殘留應力問題是一個非常重要的課題。
本研究目標為總結薄膜應力的量測方法。介紹測量基材曲率變形分析和X光繞射法量測晶格變形等量測薄膜應力及其測量原理。目前來說最常使用方法為非破壞性XRD和GIXRD來決定材料殘留應力及應變，且能夠提供較高準確度。
本研究論文利用溶膠凝膠法製成ITO薄膜，在與市售一般使用sputter製程之ITO薄膜，經由奈米壓痕、四點探針、SEM、XRD和GIXRD等等各項檢測中，可以發現sputter製程於各方面表現出薄膜其品質較(Sol-Gel)製程良好，但因sputter製程在價格方面較為昂貴且取得也較不容易；而溶膠凝膠法製程方便又快速，價格上也便宜許多。爾後可以從如何讓(Sol-Gel)製程的薄膜品質提高這方面下去探討與研究。

In processing a thin film, the micro structure of the film has complex deposition process. It generates residual stress in the most of the substrate interface. Excessive stress may lead to the bending deformation of the board and resulted in the film rupture damage. Therefore, accurate assessment of the residual stress is a very important issue to be studied.
Different kinds of thin film stress measurements are summarized. The principle of thin film stress measurements are discussed, including the laser macroscopic deformation analysis based on measuring the bending curvature of substrate and the X-ray diffraction measurement based on crystal lattice deformation. The X-ray diffraction (XRD) and GIXRD method is a non-destructive method which can accurately measure the stress-strain relationship.
This study is using the sol-gel method to process the ITO film. The commercial sputter process of ITO films consists of the detection of nano-indentation and four-point probe, SEM, XRD and GIXRD, etc. Using sputter process, all performance aspects to show the quality of the film prepared by sol-gel method can be found. However, the sputter process is more expensive and difficult to conduct, while the sol-gel method is more convenient and fast, the price is much cheaper as well. In the future, the quality of sol-gel thin film in this area can be developed more.

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