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研究生： 林嘉靚
Lin, Chia-Ching
論文名稱： 藉由多孔PVDF-TrFE及ITO或AZO當電子通道之雙層結構以提升壓電閘極場效電晶體的性能
Advancing Piezo-Gated Transistor Performance by Bilayer of ITO or AZO as the channel layer and Mesoporous PVDF-TrFE
指導教授： 劉全璞
Liu, Chuan-Pu
學位類別： 碩士
Master
系所名稱： 智慧半導體及永續製造學院 - 關鍵材料學位學程
Program on Key Materials
論文出版年： 2024
畢業學年度： 112
語文別： 英文
論文頁數： 127
中文關鍵詞： PVDF-TrFE 、電暈極化 、壓電閘極 、電晶體
外文關鍵詞： PVDF-TrFE, corona poling, piezo-gated, transistor
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    • 隨著科技和科學持續不斷的發展與進步，人們對於開發柔軟的可穿戴電子裝置投入了相當大的關注。這些裝置對未來應用具有相當的潛力，尤其是他們可以應用的領域相當的廣泛，如晶體管、奈米發電器以及壓力/觸覺感測器。在柔性材料中，聚偏氟乙烯三氟乙烯（PVDF-TrFE）是一個值得注意的複合材料，他具有優越的縱向壓電系數（30~40 pC/N），遠高於PVDF（20~30 pC/N）。這種複合材料除了具有半結晶結構，也具有卓越的壓電和鐵電性質，並同時保持了柔韌性。
    在這項研究中，為了進一步提高其柔韌性和壓電性能，我們通過混和氧化鋅（ZnO）奈米顆粒並在120°C的環境中進行熱退火處理，開發了具有孔洞的PVDF-TrFE。隨後，我們利用電暈極化(Corona poling)施加電場來使得複合材料中的偶極進行排列，並通過使用鹽酸選擇性地蝕刻氧化鋅，以實現所需的多孔結構。此外，我們在得到的多孔PVDF-TrFE不同偶極方向的兩側沉積薄的ITO或是鋁摻雜氧化鋅（AZO）薄膜作為傳導通道。最後，沉積兩個平面電極以製造壓電閘極電晶體裝置。
    通過在1V偏壓下測量1Hz頻率下不同的壓應力作用，研究了壓電閘極電晶體的電流輸出。這兩種不同偶極方向的PVDF-TrFE裝置呈現了截然不同的行為。當對裝置的正極化表面(P表面)施加壓應力時，負電荷會在ITO/AZO和PVDF-TrFE的界面產生。因此，在ITO/AZO的頂部表面通道中形成電子的空乏區域，從而降低電流。受PVDF-TrFE極化偶極的影響，壓電閘極效應得到了徹底的研究。通過將壓電場應用於閘極，可以調整半導體通道的電阻，從而控制電流流動。這種技術顯著提高了壓電閘極電晶體裝置的開創性，為柔性和可穿戴電子、感測技術等領域中的先進應用開闢了一個道路。

    In the context of scientific and technological progress, significant focus is directed towards the development of flexible wearable electronic devices. These devices hold considerable potential for future applications, particularly regarding their constituent elements such as transistors, nanogenerators, and pressure/tactile sensors. Amidst the flexible materials, one notable contender is the polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) composite, which possesses an excellent longitudinal piezoelectric coefficient (30~40 pC/N), much larger than that of PVDF (20~30 pC/N). This composite is characterized by its semi-crystalline nature and remarkable properties of piezoelectricity and ferroelectricity, while also retaining flexibility.
    In this study, to further enhance its flexibility and piezoelectric properties, mesoporous PVDF-TrFE is developed by integrating ZnO nanoparticles followed by annealing at 120°C. Subsequently, corona poling was applied to enhance aligned polar dipoles within the composite along the direction of the applied electric field. This composite is then treated with HCl to selectively etch the ZnO and achieve the desired porous structure. Furthermore, a thin Al-doped ZnO (AZO) thin film is deposited on either side of the derived mesoporous PVDF-TrFE as a conduction channel. Finally, two in-plane electrodes are deposited to fabricate the piezo-gated transistor device.
    The piezo-gated transistors are studied by measuring the current output at 1V bias and under different loads acting at 1Hz frequency. The two types of the devices exhibit contrasting behaviors in response to the two opposing dipole directions of PVDF-trFE. When a compressive load is applied to the positively poled surface (P surface) of the device, negative charges are created at the interface between ITO/AZO and PVDF-trFE. Consequently, an depletion region of electrons forms in the top surface channel of ITO/AZO, leading to an decreasement in current. The piezo-gated effect, influenced by the polar dipoles of PVDF-trFE, is thoroughly examined. By applying a piezoelectric field to the gate, it becomes possible to adjust the resistance of the semiconductor channel, thereby controlling current flow. This technique significantly improves the responsiveness of the piezo-gated transistor device, opening up possibilities for advanced applications in flexible and wearable electronics, sensing technologies, and beyond.

    中文摘要 i Abstract ii 致謝 iv Table of Contents vi List of Figures ix List of Tables xxi Chapter1 Introduction 1 Chapter2 Literature review 2 2.1 Introduction of PVDF and PVDF-TrFE copolymer 2 2.1.1 Characteristic of PVDF and PVDF-TrFE 2 2.1.2 Curie transition in PVDF-TrFE 4 2.2 Piezoelectric effect 7 2.2.1 Development of piezoelectric 7 2.2.2 Mechanism of piezoelectric effect 8 2.2.3 Piezoelectric coefficients 10 2.3 Corona Poling 13 2.4 Introduction of Al-doped ZnO and ITO 18 2.4.1 ZnO & Al-doped ZnO 18 2.4.2 Piezoelectric of Al-ZnO 21 2.4.3 ITO 30 2.5 Transistor 32 2.5.1 Bipolar Junction Transistor (BJT) 32 2.5.1 Field Effect Transistor (FET) 35 2.5.1.1 Accumulation mode of MOSFET 36 2.5.1.2 Depletion mode of MOSFET 36 2.5.1.3 Inversion mode of MOSFET 36 2.5.2 The Role and Applications of PVDF-trFE in Modern Electronics Transistors 37 2.6 Piezo-gated effect 46 2.7 Motivation 57 Chapter3 Experimental procedure 58 3.1 Experimental setup 58 3.2 Experimental material 59 3.3 Preparation of mesoporous PVDF-TrFE thin film 59 3.3.1 Blade casting 59 3.3.2 Corona poling 60 3.3.3 Chemical wet etching 61 3.4 Fabrication of the PGFT devices 61 3.5 Material Analysis 63 3.5.1 Morphology and Crystal Structure Characteristic 63 3.5.1.1 Scanning Electron Microscopy (SEM) 63 3.5.1.2 X-Ray Diffraction(XRD) 64 3.5.2 Mechanical measurement 65 3.6 Device testing measurement 65 Chapter4 Results and Discussion 67 4.1 PVDF-trFE characteristic 67 4.1.1 Surface Morphology and Crystal Structure Analysis of PVDF-trFE 67 4.1.2 Measurement of the Mechanical Properties of PVDF-TrFE 69 4.2 Characteristic of ITO and AZO on different PVDF-trFE(P/N) 71 4.2.1 Surface Morphology and Crystal Structure Analysis of ITO and AZO on different PVDF-trFE(P/N) 71 4.2.2 Measurement of the Mechanical Properties of ITO and AZO on different PVDF-trFE(P / N) 75 4.3 Piezo-gated Transistor Device 76 4.3.1 Piezo-gating effect mechanism and performance of PGFT with ITO channel on poled PVDF-trFE 77 4.3.2 Piezo-gating effect mechanism and performance of PGFT with AZO channel on nonpoled PVDF-trFE 82 4.3.3 Piezo-gating effect mechanism and performance of PGFT with AZO channel on poled PVDF-trFE 87 4.4 MOSFET inversion mode in ITO-P sample 92 4.5 Future aspect 95 Chapter5 Conclusions 96 Chapter6 References 99

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