在溫室效應持續影響下，全球極端氣候現象日趨嚴重，所有替代能源之開發刻不容緩，包括將太陽能源全面性地應用於日常生活中的概念，是全體人類共同努力的目標。本論文內容敘述透過光伏電池製程端的優化及輔助設備的設計開發，有效地改善塊材矽太陽能元件及非晶矽薄膜太陽能電池元件之品質效率，達成在維持光伏產業高度競爭力的同時，也能大幅降低高效光伏電池元件的製造成本，如此一來，就能早日達到太陽能電網全面普及化的目標。
多晶矽材料在矽塊材電池模組開發中，一直扮演著舉足輕重的角色。近年來，因鑽石線切割製程全面成為矽晶圓切晶的主流技術，其特點包含製程時間快速，並能大量減少矽原料的浪費，以及具備能將製程中所產生廢棄矽砂再回收利用等多重優點。但同時也存在著矽晶圓切片生產良率偏低及表面密集線痕嚴重等缺陷瓶頸，造成了多晶矽電池元件與單晶矽電池元件在整體效益上之差距日益漸增現象。
本研究中，透過鑽石磨料切削時的循環週期時間調校，用以提升切削系統的總體移除能力，其實驗條件分別為80秒、160秒、240秒及320秒，透過延長循環週期能將鑽石磨料於製程中所受的總體摩擦力最小化，並延長切割磨料粒子穩定處於在高速切削狀態的時間，因此能有效地提升切晶系統的整體切削力。根據本研究結果顯示，最佳化的循環週期時間240秒，能使得多晶矽晶圓之量產良率提升至94.22%。
在表面密集線痕改善方面，導入自行開發之x-y雙軸式微壓噴砂系統對矽晶圓片表面進行處理，矽晶圓表面平均反射率被大幅的降低，由原先的28.94%改善至22.28%，在電池元件效率的表現上，短路電流及轉換效率的表現分別達到8.70 A與17.92%，皆優於未經噴砂處理的元件表現，其短路電流為8.59 A以及轉換效率僅17.35%，此實驗結果證實透過微壓噴砂製程，表面密集線痕的確能有效地被移除而得到良好的光伏元件特性。
同時針對非晶矽氫化薄膜元件製程方面，導入二氧化碳雷射輔助電漿增強式化學氣相沉積系統，可沉積具低氫濃度的高質量矽氫薄膜。並根據微拉曼光譜結果顯示，隨著二氧化碳雷射功率從0 W 逐漸增加到80 W，其微拉曼光譜訊號由波數 482 cm1 移動至 512 cm1，此結果顯示薄膜中晶相結構逐漸由非晶矽相位轉變為具微晶矽的狀態， 並透過 X 光繞射分析(XRD)實驗加以佐證，可觀察到經二氧化碳雷射輔助所成長之矽薄膜，具有明顯(111)、(220)和(311)的矽結晶訊號。並透過電池元件結構之照光衰退實驗後，證實透過二氧化碳雷射輔助之元件光衰退效率由31.9% 大幅改善至12.3% 。最終，透過氫氣電漿鈍化技術處理具微晶矽結構之p-SiC/i-Si/n-Si太陽能電池元件，其轉換效率可由6.89%被大幅提升至8.58%。

Global warming has become a crisis of the first magnitude for the Earth. The rapid change of climate has caused serious problems as ecological imbalance. The low carbon renewable energy development is essential in humanity. The photovoltage (PV) device applied in daily life is an imperative means of reducing the greenhouse effect in the world. In order to keep the core competitive of solar mass production industry for photovoltage module panels popularizing. The purpose of this thesis is focus on silicon based solar cell performance improvement due to process optimization and unique equipment development, including crystalline silicon structure and amorphous silicon structure. The cost of device fabrication will be reduced significantly to achieve the solar electric grid dissemination.
The multi-crystalline silicon- (mc-Si) based device plays an essential role in bulk PV-module industry around the world. In recent years, diamond wire sawing (DWS) technique has rapidly gained attention owing to it has some inherent advantages, such as short time of slicing process, less consumption of Si per unit capacity and Si kerf-recycling. However, the low slice yield and surface saw mark issue were observed in DWS slicing process. It’s the main two root causes of the benefit gap between the mono crystalline silicon based and multi crystalline silicon based.
In this work, various reciprocating cycle times of 80, 160, 240, and 320 sec in the DWS process were adjusted to improve the slicing ability in solar industry. The total friction force of the slicing wires used in the DWS process with the short reciprocating cycle time was larger than that of the slicing wires used in the DWS process with the long reciprocating cycle time. With the longer cycle time, the process time of diamond abrasive grits with high velocity was increased. Therefore, the highest mass production yield of 94.22% for the DWS-sliced mc-Si wafers were obtained as the suitable reciprocating cycle time was 240 sec.
For saw mark issue, the passivated surface of the mc-Si wafer was treated by using the x-y axis micro-pressure sandblast system. The average reflectivity of the DWS mc-Si wafers with sandblast process was reduced from 28.94% to 22.28%. The short-circuit current of 8.70 A and the power conversion efficiency of 17.92% for the DWS solar cells with micro-pressure sandblast treatment were respectively. The results were better than 8.59 A and 17.35% in comparison with the DWS mc-Si solar cells without micro-pressure sandblast treatment. The high performance of the mc-Si device with sandblast treatment was achieved due to the light-trapping ability improving.
In hydrogenated amorphous silicon device optimization, the Si-based films with low hydrogen concentration were deposited using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the Raman signal of the resulting Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated the crystallinity of the Si films was gradual transformation from amorphous to micro-crystalline. According to the X-ray diffraction (XRD) results, the micro-crystalline i-Si films with (111), (220), and (311) diffraction were obtained. In standard device test, the light degradation of the Si-based solar cells deposited by the LAPECVD was improved from 31.9% to 12.3%. In final, the power conversion efficiency of micro-crystalline Si-based solar cells fabricated by the LAPECVD with assisting laser power of 80 W was improved significantly from 6.89% to 8.58% in comparison with the Si-based solar cells fabricated by the LAPECVD without laser assisting.

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