本研究以二步溶液法進行鹵化甲基胺鉛鈣鈦礦材料之成長以及太陽能電池元件之製作，並探討元件內部之TiO2電子傳輸層對效率之影響。
首先探討二步溶液法中鈣鈦礦材料之成長機制。透過改變有機鹽類溶液與無機鹽類薄膜之接觸時間，可控制鈣鈦礦薄膜之表面型態，並透過調整有機鹽類溶液之濃度可控制薄膜之反應程度，成功地製作出CH3NH3PbI3以及CH3NH3PbI3-xClx鈣鈦礦薄膜。接著,利用TiCl4水解法於FTO基板表面成長TiO2緻密層，並搭配前述之CH3NH3PbI3鈣鈦礦薄膜進行平面式鈣鈦礦太陽能電池之製作。在TiO2緻密層厚度為100nm之情況下，可製作出效率為8.3%之電池，然而以水熱法所製作之TiO2緻密層易受人為操作的干擾而降低實驗再現性。
最後利用中孔洞性TiO2結構以製作中孔洞性鈣鈦礦太陽能電池，結果發現中孔洞結構之孔隙度對於電池效率影響甚劇。當孔隙度太小時，有機鹽類難以擴散進入而導致CH3NH3PbI3-xClx薄膜反應不完全。因此改以孔隙度較大之中孔洞結構，並以鈦薄膜氧化法取代水解法製作TiO2緻密層，以進一步地抑制基板暗電流，可使電池之效率自2.7%提升至8.0%。

This study investigated the growth of methylammonium lead halide perovskite material by two step solution processing as well as the influence of transport layer and light absorption layer prepared by different procedure on the performance of solar cell.
First, the growth mechanism of methylammonium lead halide in two step solution processing was investigated. By adjusting the reaction time between methylammonium halide solution and lead iodide thin film, the surface morphology of perovskite thin film could be controlled. And, the concentration of methylammonium halide solution was modified to increase the conversion of lead iodide thin film. As a result, CH3NH3PbI3 and CH3NH3PbI3-xClx perovskite thin films were successfully prepared. And then planar perovskite solar cells were fabricated using CH3NH3PbI3 thin film, where, TiO2 compact layer was deposited on FTO glass by hydrolysis of TiCl4 aqueous solution. An optimized efficiency of 8.3% was obtained at a TiO2 compact layer thickness of 100nm. To further investigate the influence of mesoporous transport structure on the efficiency, mesoporous TiO2 structure, prepared by coating TiO2 nanoparticle colloid solution on compact layer, was employed to fabricate mesoporous perovskite solar cell. The results show that lower porosity of mesoporous structure would restrict the diffusion of methylammonium halide leading to the presence of unreacted lead iodide. Therefore, a higher porosity was employed to increase the conversion of lead iodide. An efficiency of 8.0% was obtained via the use of higher porosity mesoporous structure and the deposition of TiO2 compact layer by the oxidization of Ti thin film instead of the hydrolysis of TiCl4 to efficiently suppress the charge recombination at the interface between compact layer and substrate.

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