本研究利用壓印製程，製作ITO導線圖案。首先以曝光微影製程，將正型光阻s1818定義出圖案；再灌鑄PDMS前驅物，交聯成所需軟模。再經由溶膠凝膠法調配出0.2 M之ITO溶液，將該溶液以旋轉塗佈法成膜，在氮氣環境下燒結後，進行性質分析。實驗結果顯示在500 ℃燒結半小時可得最低電阻率0.009 Ω-cm，可見光範圍的透光率80 %以上。接著將ITO溶液進行壓印製程，利用毛細管力將ITO溶液灌入軟模與基板間的通道，形成導線圖案；脫模後，同樣在氮氣環境下燒結。可成功製出線寬分別為32 μm、1 μm的導線圖案。經由直流量測系統測其電性，電阻率最低為0.16 Ω-cm。

The conductive ITO lines were fabricated by the sol-gel method with imprinting lithography technique. At frist, masters were made froms1818 photoresist by photolithography. After casting PDMS precursorinto the masters, we obtained the replicated PDMS soft molds. Next, 0.2 MITO solutions were synthesized by the sol-gel method. The ITO films were prepared from spin-coating the ITO solution, and sintering under N2 atmosphere. Experimental results showed that the best resistivity was 0.009 Ω-cm, the optical transmittance was over 80 %. Then,the mocromolding in capillaries (MIMIC)process was employed to form the ITO patterns. The 32 μm- wide lines and 1 μm- wide lines were successfully fabricated. The best resistivity of the lines was 0.16 Ω-cm.

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