本實驗研究在矽鍺(SiGe)基板上進行侷域陽極氧化(LAO)，藉由LAO後產生不同的SiGe氧化物結構。用AFM確認LAO後的區域，證實表面因LAO氧化產生氧化物結構。
經由TEM分析SiGe氧化物內結構，在原先為單晶結構的SiGe層晶LAO後呈現非晶相的狀態，但是在非晶質結構頂層出現局部晶質現象。由晶格常數分析後，頂部局部晶質之晶格常數為接近鍺元素之晶格。
透過TEM對氧化物內結構的解析，確認陽極氧化對SiGe合金的影響後，進一步去成長奈米點氧化物，期望在奈米點氧化物內生成Ge量子點。

We investigated scanning probe assisted localized anodization (LAO) on a SiGe substrate, which can produce SiGe oxide structures with nano-meter scale. The LAO area, which was examined by AFM, confirmed that the area was oxidized with amorphous structure and having nano-crystalline clusters by HR-TEM. After analyzing the lattice constants of the nanoclusters, we can confirm the formation of Ge nanoclusters in the LAO structures of SiGe.

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