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研究生： 陳銘達
Chen, Ming-Ta
論文名稱： 濺鍍沉積法合成氧化鋅奈米線/棒於矽基板
Sputter Deposition of ZnO nanowires/nanorods on Si
指導教授： 丁志明
Ting, Jyh-Ming
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2005
畢業學年度： 93
語文別： 中文
論文頁數： 125
中文關鍵詞： 奈米棒 、無電鍍銅 、氧化鋅 、濺鍍 、奈米線
外文關鍵詞： electroless, ZnO, sputter, nanowire, nanorod
相關次數： 點閱：97  下載：2 
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    • 　　目前一維奈米材料的研究非常熱門，其中許多研究團體專注在氧化鋅奈米結構及其應用，其中奈米線合成的方法大部分利用了氣-液-固(VLS)機制的各種合成法。而根據之前的研究發現【1,2】，我們利用濺鍍系統在無電鍍銅的基板上沉積出氧化鋅奈米棒的結構，而此合成方法無法利用VLS的機制來解釋其成長過程，成長機制並不是十分明顯。本論文在討論在不同銅層析鍍下，經由射頻濺鍍氧化鋅試圖以得到氧化鋅奈米棒，進而改變濺鍍系統的參數，藉此試圖改變氧化鋅奈米棒的尺寸及性質。經過實驗結果顯示，無電鍍銅沉積速率對於成長氧化鋅奈米棒的影響非常大，以較快的沉積速率析鍍之無電鍍銅較能成長出高密度的奈米棒。之後並討論氧化鋅奈米棒的光學性質。

    　　Various techniques have been used to grow ZnO nanorods and a common mechanism to explain the growth of ZnO nanorods or nanowires is the vapor-liquid-solid (VLS) mechanism. Different from these processes and the VLS growth mechanism, we have reported in previous papers【1,2】, a new route for the growth of ZnO nanorods using a sputter deposition technique.It was found that the coating of an electroless copper layer on the substrate is critical for the formation of ZnO nanorods. It also appears that the VLS fails to explain the growth mechanism and the growth mechanism is still unclear. Therefore, as a part of the effort to explore the unknown growth mechanism, we have investigated the effect of various copper coatings and ZnO deposition parameters on the formation of ZnO nanorods. The formation of ZnO nanorods is discussed.

    摘要......................................................I 英文摘要.................................................II 致謝....................................................III 目錄.....................................................IV 圖目錄.................................................VIII 表目錄.................................................XIII 第一章 緒論...............................................1 第二章 文獻回顧...........................................4 2-1 氧化鋅薄膜之文獻回顧................................4 2-2 製程條件............................................8 2-3氧化鋅奈米線之研究..................................10 2-4 濺鍍理論...........................................16 2-4-1 濺鍍原理.....................................16 2-4-2 濺鍍率及影響因素.............................17 2-5 薄膜沉積的原理.....................................20 2-5-1 沉積現象.....................................20 2-5-2 薄膜表面及截面型態結構.......................22 IV 2-6 無電極電鍍.........................................24 第三章 實驗方法..........................................28 3-1 實驗流程...........................................28 3-2 基板清洗...........................................29 3-3 射頻濺鍍鈦薄膜於矽基板.............................29 3-4 熱蒸鍍銅、濺鍍銅及無電鍍銅的製備...................30 3-4-1 熱蒸鍍銅製備.................................30 3-4-2 射頻濺鍍銅製備...............................31 3-4-3 無電鍍銅製備.................................32 3-5 射頻磁控濺鍍氧化鋅.................................35 3-6 試片分析...........................................36 3-6-1 顯微分析.....................................36 3-6-2 結構分析.....................................37 3-6-3 成份分析.....................................39 3-6-4 表面分析.....................................39 3-6-5 發光特性分析.................................40 第四章 結果與討論 4-1 無電鍍銅、濺鍍銅及熱蒸鍍銅層之分析.................42 4-1-1 pH值對無電鍍銅的影響........................42 V 4-1-2 溫度及pH值對無電鍍銅的影響..................49 4-1-3 控制鍍液組成對無電鍍銅粗糙度的影響...........53 4-1-4 無電鍍銅的退火熱處理.........................55 4-1-5 無電鍍銅的氫氣蝕刻處理.......................59 4-1-6 濺鍍銅與熱蒸鍍銅之分析.......................61 4-1-7 無電鍍銅、濺鍍銅與熱蒸鍍銅的比較.............63 4-2 濺鍍銅和熱蒸鍍銅成長氧化鋅奈米棒...................66 4-3 無電鍍銅層成長氧化鋅奈米棒.........................69 4-3-1 控制無電鍍沉積速率成長氧化鋅奈米棒的結構分析.69 4-3-2 無電鍍銅鍍液pH值對成長氧化鋅奈米棒的影響 ...73 4-3-3 無電鍍銅退火後成長氧化鋅奈米棒...............78 4-3-4 無電鍍銅經過氫氣蝕刻後成長氧化鋅奈米棒.......81 4-4 氧化鋅濺鍍參數控制對氧化鋅奈米棒成長與結構的影響.. 83 4-4-1濺鍍時間對氧化鋅奈米棒結構的影響..............83 4-4-2濺鍍工作壓力對氧化鋅奈米棒結構的影響..........95 4-4-3工作距離對氧化鋅奈米棒結構的影響..............99 4-4-4 改變濺鍍角度對氧化鋅奈米棒結構的影響........102 4-4-5 射頻功率對氧化鋅奈米棒結構的影響............106 4-5 氧化鋅奈米棒成長機制的探討.......................110 VI 第五章 結論.............................................118 參考文獻................................................121

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