本研究利用反應式磁控共濺鍍系統成長出鉭-矽-氮(Ta-Si-N)的奈米複合薄膜，並利用快速退火爐進行不同溫度的熱穩定檢測。主要探討反應氣體－氮氣比例、功率及基板偏壓等製程參數，對氮化鉭矽奈米複合薄膜微結構、成份、電阻率、電阻溫度係數之影響與關係。
本文藉由控制鉭靶與矽靶的功率，搭配不同的氮氣流量以進行反應式磁控共濺鍍，以成長出不同成分及微結構的鉭-矽-氮薄膜。並藉由500 °C快速退火爐的熱處理後，探討薄膜的熱穩定性。最後將其以四點探針(Four Point Method)與膜厚量測計算薄膜電阻率，以四點探針組合I-V量測平台以測量電阻溫度係數 (Temperature Coefficient of Resistance TCR)，以低掠角X-ray繞射儀 (Glancing Incident Angle X-Ray Diffraction)分析其微結構與結晶相，使用原子力顯微鏡 (Atomic Force Microscope)觀察薄膜表面形貌，利用能量散佈光譜儀 (Energy Dispersive Spectroscopy)與歐傑電子能譜儀 (Auger Electron Spectroscopy)檢測薄膜的組成。
實驗結果顯示，Ta-Si-N薄膜的電阻率隨製程參數變化，約為300至1,400,000 μΩ-cm，並隨著氮氣流量比的上升而增加。當氮氣流量比為2- 10%時，微結構為類非晶－奈米晶粒的結構，其表面形貌相對緻密且TCR值較低。當氮氣流量比達到20%時，會轉換為多晶的微結構，其表面形貌會較鬆散，界面較明顯，但TCR值會大幅上升。A組中有較多矽成份，會提高熱穩定性。總體而言，矽靶功率對薄膜性質的影響不如氮氣比例的改變明顯，所以當氮氣流量比為5%時，會有最佳穩定性及較低TCR值。預期可應用薄膜電阻領域上。氮氣流量比為30%時，具較高的TCR值薄膜則適合應用在感測的元件上。使用離子乾式蝕刻，配合SF6及CF4兩種氣體，可以成功的對Ta-Si-N薄膜蝕刻在薄膜上定義圖案。而藉由剝離法 (Lift-Off)亦可在矽基材及高份子基材上沈積Ta-Si-N薄膜並成功定義圖案，以製作簡易的溫度感測元件，其TCR結果約在-7600 ppm/°C

n this study, Ta-Si-N nanocomposite thin films were deposited by reactive co-sputtering system. The study focuses on process parameters effect on thin film structure, composition, resistivity and temperature coefficient of resistance.
Ta-Si-N films were prepared by different tantalum, silicon target powers, nitrogen flow rate and bias to deposit different micro-structure and composition thin films. In order to realize thermal stability of films, Ta-Si-N films were annealed by RTA at 500 °C for one minute. The resistivity, TCR, crystallographic structures, surface morphology and composition, were investigated by α-step, four-point probe with I-V measurement system, grazing incident angle X-ray diffraction (GIAXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).
Results showed the resistivty increasing not only silicon power but N2 flow rate. As low N2 flow rate, thin film resistivity was about 300 μΩ-cm and it increased to 1,400,000 μΩ-cm at high N2 flow rate. At low N2 flow rate, the structure remained amorphous-like and surface morphology kept smooth. The TCR values were lower as at low flow rates from 3 to 10% and they had good performance for thin film resistors. However, at high N2 flow rate, the structure turned to crystalline and Ta-Si-N surface morphology changed to rough. The TCR values were large at high N2 flow rate as 30%, it could reach -8000 ppm/°C and it had great performance for sensing element. Ta-Si-N films could be etched by SF6 and CHF3 and they could also be fabricated successfully on silicon and liquid crystalline polymer substrate. It means Ta-Si-N films could apply on sensors and have good performance as -7600 ppm/°C.

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