本研究以氣相冷凝系統，蒸鍍高品質之本質氧化鋅材料，研製工作波段位於300 nm之氧化鋅材料共振腔增強式結構之金屬-半導體-金屬紫外光檢測器(Resonance Cavity Enhanced Metal-Semiconductor-Metal ultraviolet Photodetectors, RCE MSM UV PDs)。元件結構之設計結合傳統MSM-PDs與法布里-珀羅腔體(Fabry-Perot cavity)，利用介電材料氧化鉿(HfO2)與二氧化矽(SiO2)交互堆疊製作出18.5對以及2.5對分佈式布拉格反射鏡(Distributed Bragg Reflector, DBR)做為元件底部與頂部反射鏡，研製出具有單一波段選擇性、高外部量子效益與高靈敏度之紫外光檢測器。
本論文製作並比較有無共振腔結構之光檢測器之元件特性。傳統厚吸收層之MSM-PDs在偏壓5V時，暗電流為22 pA，而氧化鋅厚度為70nm之薄吸收層RCE MSM-PDs則為52 pA。MSM-PDs元件之紫外光-可見光拒斥比為114，而RCE MSM-PDs則可提升至226，而外部量子效益與內部增益之乘積則分別為155% 與113%。

In this study, a novel vapor cooling condensation technique was used to deposit high quality i-ZnO films. And ZnO-based resonant cavity enhanced (RCE) Metal-Semiconductor-Metal (MSM) ultraviolet (UV) photodetectors for operating at wavelength of 300 nm was design and fabricated. We combine traditional MSM-PDs and Fabry-Perot cavity composed of 18.5-pair HfO2/SiO2 Distributed Bragg Reflector (DBR) as the bottom mirror and 2.5-pair DBR as the top one. Such RCE devices benefit from the wavelength selectivity, high external quantum efficiency, and high detectivity
In this thesis, we compared the device properties of traditional MSM- PDs with RCE MSM-PDs. When bias at 5V, the dark current of MSM PDs is 22 pA and the RCE MSM PDs is 52 pA. The UV-visible rejection ratio of 226 and 114 was obtained for the ZnO MSM-PDs with and without RCE structure. The products of quantum efficiency and internal gain of ZnO MSM-PDs with and without RCE structure under a bias voltage 5V at a wavelength of 300 nm and 310 nm is 155% and 113%, respectively.

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