本論文係在研究利用金(Au)誘發非晶矽鍺(a-Si1-xGex:H)薄膜進行橫向結晶形成多晶矽鍺(poly-Si1-xGex)薄膜以供光電元件用之技術。首先利用電漿助長化學汽相沉積(PECVD)系統成長a-Si1-xGex:H薄膜，然後再利用指叉狀金屬光罩來蒸鍍或濺鍍Au及在不同的退火條件下，使a-Si1-xGex:H薄膜開始橫向結晶形成poly- Si1-xGex，此即為金屬橫向誘發結晶(MILC：Metal Induced Lateral Crystallization)技術。此技術的特點在於所成長的多晶晶粒的橫向長度大於縱向的寬度。因此可減少橫向的晶界（Grain Boundary）數目，有利於光電元件如TFT-LCD的橫向電流傳輸。

經由實驗，吾人發現利用金誘發並在500℃及3~10小時退火條件下，其橫向結晶速度可達15.1~22μm/hr，相較於目前利用鎳Ni在500℃下退火，擁有較長的多晶晶粒（約2倍）及較快的結晶速率（約1.3倍）。另外值得注意是，利用此技術成長之薄膜TCR值，可比於利用高溫成長之poly-Si1-xGex，因此可利用此技術取代高溫製程發展poly-Si1-xGex的紅外線熱輻射感測器，以大幅降低成本，提昇產業競爭力。本論文以製作MSM結構光檢測器來驗證此技術成長之poly-Si1-xGex薄膜之可用性。所發展的檢測器，在室溫下，其光/暗電流比可達到8倍之多，已達實用階段。

The gold (Au) metal induced lateral crystallization (MILC) of hydrogenated amorphous silicon germanium (a-Si1-xGex:H) thin films have been investigated with various annealing temperature (400～500℃) and annealing time (3～10hr). After 500℃, 3～10hr annealing treatment, the MILC rate of Au-induced a-Si1-xGex:H film can be up to 22mm/hr, which is approximate 1.3 times to that of the conventional Ni-induced. Additionally, the maximum length of induced grain with Au-induced technology is about 2 times to the one by the Ni-induced.
Next, The TCR (Temperature coefficient of resistance) of the Au-induced poly-Si1-xGex is comparable to that of the film by high temperature LPCVD. Therefore the Au-induced low temperature MILC technology can replace the high temperature LPCVD process to develop low cost poly-Si1-xGex infrared bolometer. Furthermore, a M-S-M photo-detector has been developed with the Au-induced poly-Si1-xGex to verify usability of the technology. Experimental results show that under room temperature, the ratio of photo/dark current gain is 8, which is good enough for real applications.

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