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研究生：	林建邦 Lin, Chien-Pang
論文名稱：	基板加熱對於鈦酸鍶鋇薄膜之特性影響 Effect of substrate heating on the characteristics of barium strontium titanate thin films
指導教授：	陳貞夙 Chen, Jen-Sue
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學及工程學系 Department of Materials Science and Engineering
論文出版年：	2003
畢業學年度：	91
語文別：	中文
論文頁數：	126
中文關鍵詞：	薄膜、介電可調性
外文關鍵詞：	tunability, thin films
相關次數：	點閱：59 下載：6
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本研究將以射頻磁控濺鍍法製備鈦酸鍶鋇(BaxSr1-xTiO3)薄膜，以基板不加熱以及基板加熱為主要變數，並且經不同溫度下退火，探討其在不同製程參數下之特性影響。實驗中以鈦酸鋇和鈦酸鍶粉末配置等莫耳比，經陶瓷製程燒結成鈦酸鍶鋇靶材。濺鍍過程中，基板加熱的條件為400℃，濺鍍完成之薄膜皆分別經600℃、700℃和800℃氧氣氛退火120分鐘。本實驗大致上分成兩個部分：第一部分為鈦酸鍶鋇薄膜之材料微結構分析；第二部分則為電性量測之探討。最後將後將材料微結構與電性表現相互比較，在兩者之間尋求其關連性。
試片製備方面，使用熱氧化爐氧化矽晶片生成二氧化矽，之後以濺鍍法沈積金屬鈦以及鉑下電極成為Pt/Ti/SiO2/Si基板結構，以此基板沈積鈦酸鍶鋇薄膜於上，並使用掃瞄式電子顯微鏡、低掠角X光繞射儀、原子力顯微鏡、穿透式電子顯微鏡分析、拉塞福背向散射能譜儀及X光反射率量測其材料特性。由實驗結果顯示：鈦酸鍶鋇薄膜在基板不加熱的條件下，要到700℃之後才會有開始結晶，而基板加熱的條件下初鍍膜就開始有結晶的現象。對於表面型態而言，對於基板不加熱條件，表面粗糙度有隨退火溫度升高而變大的趨勢；基板加熱400℃條件，則是有隨退火溫度升高而下降的趨勢，但在退火700℃時，粗糙度達到最大值。在計量比的分析裡，經由射頻磁控濺鍍法沈積鈦酸鍶鋇薄膜，其計量比會有所偏差，鋇原子以及鍶原子之總和會比較鈦原子少，而基板不加熱的條件會比較接近計量比。
電性量測方面，兩個條件下的鈦酸鍶鋇薄膜，其漏電流皆會隨著退火溫度的升高而變大。基板不加熱條件的初鍍膜有比較低的漏電流表現，在退火700℃和800℃之下，對於基板不加熱以及基板不加熱條件的鈦酸鍶鋇薄膜，其漏電流性質類似。對於介電性質，基板加熱的條件有較佳的表現，退火700℃的薄膜有最高的介電常數，而在退火800℃後，有最大的介電可調性。

Characteristics of BaxSr1-xTiO3 thin films prepared by radio-frequency sputtering were investigated in this thesis. Substrate heating or not during deposition is the main variable, and samples were annealed at different temperatures after deposition. Finally, we discussed the influences of processing conditions on the BaxSr1-xTiO3 thin film characters. Barium titanate and strontium titanate powders of the same mole ratio were sintered into sputtering targets by ceramic process. During sputtering deposition, the temperature of substrate heating was set at 4000C, or the substrate was not heated extremely. After deposition, these films were annealed at 6000C, 7000C and 8000C in oxygen atmosphere for 120 min. The experiment contains two parts: one is the microstructural analysis of BaxSr1-xTiO3 thin films, and the other is the electrical measurement on them. Meanwhile, the correlation between the material characteristics and electrical properties is discussed.
In substrate preparation, the SiO2 layer was grown by oxidizing the silicon wafer in thermal oxidization furnace, and then deposited the titanium and the platinum layers on it by sputering. The substrate structure is Pt/Ti/SiO2/Si. The BaxSr1-xTiO3 thin films were deposited on these substrates, and the samples were analyzed using scanning electron microscopy (SEM), glancing incident angle X-ray diffraction (GIAXRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and X-ray reflectivity (XRR). The BaxSr1-xTiO3 thin films deposited without substrate heating crystallized after annealing at 7000C, but the films deposited at 400℃ become crystallizing in deposited film. In morphology, the roughness of the BaxSr1-xTiO3 thin films deposited without substrate heating become coarse with the increase of annealing temperature. And the roughness of the BaxSr1-xTiO3 thin films deposited with substrate heating become smooth with the increase of annealing temperature, but the film annealed at 7000C has the maximum of roughness. In stoichiometric analysis, the BaxSr1-xTiO3 thin films deposited by radio-frequency sputtering are out of stoichiometry. The barium atoms and strontium atoms are deficient in compared with Ti atoms. The BaxSr1-xTiO3 thin films without substrate heating are more stoichiometric than these with substrate heating.
In electrical measurement, the leakage current of BaxSr1-xTiO3 thin films deposited without substrate heating and with substrate heating both increase with increasing annealing temperature. The as-deposited film without substrate heating has the lowest leakage current. After annealing at 7000C and 8000C, the films without substrate heating and with substrate heating have similar performances. In dielectric property, BaxSr1-xTiO3 thin films deposited at 400℃ have better performances. The films deposited at 400℃ and then annealed at 700℃ have the highest dielectric constant. And the films annealed at 800℃ have the best tunability.

第一章 前言與研究目的.....................................................1
1-1 前言..................................................................1
1-2 研究目的..............................................................4
第二章 理論基礎...........................................................5
2-1 介電理論..............................................................5
2-1.1 極化現象與相對介電常數..............................................5
2-1.2 極化機制以及頻率特性...............................................10
2-1.3 介電損失...........................................................13
2-2 介電陶瓷材料之量測方法...............................................17
2-2.1 幾種常用量測介電常數的方法.........................................17
2-3鈦酸鋇基本性質........................................................20
2-3.1 鈦酸鋇的基本性質...................................................20
2-3.2 鈦酸鍶的基本性質...................................................25
2-3.3 鈦酸鋇的介電性質...................................................26
2-3.4 原子置換對於鈦酸鋇的影響...........................................30
2-4 文獻回顧.............................................................35
第三章 實驗方法與步驟....................................................38
3-1 實驗材料.............................................................38
3-1.1 鈦酸鍶鋇靶材(Target)製作...........................................38
3-1.2 金屬靶材...........................................................38
3-1.3 基材(Substrate)....................................................39
3-1.4 濺鍍、熱氧化及退火氣體.............................................39
3-1.5 實驗相關藥品.......................................................40
3-2 實驗設備.............................................................41
3-2.1 陶瓷靶材製程設備...................................................41
3-2.2 濺鍍系統(Sputtering System)........................................41
3-2.3 乾式熱氧化系統(Dry Oxidation System)...............................43
3-2.4 氣氛退火系統(Atmospheric Annealing System).........................44
3-3 實驗材料準備.........................................................45
3-3.1 靶材製備...........................................................45
3-3.2 基材製備...........................................................47
3-4 實驗流程.............................................................51
3-4.1 濺鍍鈦酸鍶鋇薄膜...................................................55
3-4.2 退火步驟...........................................................55
3-4.3 製作上電極.........................................................57
3-5 分析設備.............................................................59
3-5.1 Alpha-step.........................................................59
3-5.2 SEM(Scanning electron microscopy)..................................59
3-5.3 AFM(Atomic force microscopy).......................................59
3-5.4 TEM(Transmission electron microscopy)..............................60
3-5.5 GIAXRD(Glancing incident angle X-ray diffraction)..................60
3-5.6 RBS(Rutherford backscattering spectrometry)........................61
3-5.7 XRR(X-ray reflectivity)............................................61
3-5.8 電性量測...........................................................62
第四章 實驗結果與討論....................................................63
4-1 材料基本性質分析.....................................................63
4-1.1 X-ray繞射分析......................................................63
4-1.2 SEM表面型態分析....................................................73
4-1.3 AFM表面粗操度分析..................................................76
4-1.4 TEM Plain view觀察.................................................82
4-1.5 RBS分析............................................................87
4-1.6 XRR分析............................................................95
4-2 電性分析............................................................108
4-2.1 I-V分析...........................................................108
4-2.3 C-V分析...........................................................111
第五章 結論.............................................................117
參考資料................................................................119
                                    

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