我們使用X-ray光譜、原子力顯微鏡來測量與分析利用分子束磊晶儀在不同氣體背景下成長的次微米pentacene薄膜，並將以pentacene為半導體層的有機薄膜電晶體製作在n-type矽基板上。以室溫下成長的pentacene分子當作元件主動層，研究不同氣體環境對元件特性的影響。

　　透過X-ray光譜分析，可知道對照實驗（不通入任何氣體的高真空環境中）的pentacene分子薄膜具有兩種結晶態「thin-film phase」和「single crystal phase」，由文獻上得知，若兩種結晶態同時存在pentacene分子薄膜中，其元件特性不佳，所以藉著通入氮氣或氬氣，可使在其上成長的pentacene分子只存在一種結晶態，進而得到較佳的元件表現。

　　實驗中發現，通入各種氣體會產生不同的結晶大小。而通入氮氣的元件和對照實驗相較之下約增加結晶大小50Å左右， 可將元件載子遷移率提升至0.2~0.3 cm2/Vs；通入氫氣的元件則比通入氮氣的結晶約小100Å，載子遷移率則相差80倍。

　　Submicron thick pentacene films deposited by molecular beam epitaxy were grown at room temperature and characterized by use of X-ray diffraction, atomic force microscopy. Pentacene-based organic thin-film transistors (OTFTs) were fabricated on a n-type silicon substrate. From the analyses of X-ray diffraction, the structure of the highly ordered pentacene films, which deposited at nitrogen environment, includes only a single “thin-film phase”. However, the pentacene film formed at high vacuum environment without injecting any gas includes two phases- a “single-crystal phase” and a “thin-film phase”. In experiments, we found that grain sizes of pentacene films were various with gas environment. Comparison with high vaccum environment, grain size of pentacene film increases 50Å while the pentacene film grows at nitrogen environment. Improved field-effect mobility, in the range 0.2 ~ 0.3 cm2/Vs, was achieved in pentacene-based OTFTs grown at nitrogen environment. The grain size of the pentacene film grown at hydrogen environment is smaller than that deposited at nitrogen environment about 100 Å, so its field-effect mobility is also decreased about 80 times.

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