本論文的研究方向有二：第一部份主要是研究類鑽碳奈米複合薄膜的機械與磨耗性質與探討薄膜沉積時奈米粒子的形成機構；第二部份則是針對矽奈米晶體複合薄膜的光電性質、結構分析以及光電元件的製作與電性量測分析。
在類鑽碳奈米複合薄膜的研究方面，主要是針對傳統的類鑽碳薄膜在應用上具有的缺點來進行改良。由於類鑽碳膜具有極佳的物理與化學特性，因此可應用於模具、光學元件與生醫材料等方面。然而因為類鑽碳膜的成長機構中，是藉由鍍膜離子的能量大小來進行薄膜性質的控制。欲沉積硬度較高的類鑽碳膜，通常必須在較高的離子能量下進行薄膜的沉積，但也容易在薄膜中存在頗高的殘留應力，而造成類鑽碳薄膜與試件之間無法擁有良好的附著性。因此在本研究中將利用含有Si-C-O等元素的Hexamethylsiloxane，HMDSO為反應物進行薄膜的沉積。所形成的HMDSO膜進行結構鑑定，以XPS光譜分析薄膜的鍵結型態，推測內部具有Si-O所組成的奈米粒子，再藉由高解析穿透分析式電子顯微鏡確定該奈米粒子的存在與大小，以確定HMDSO膜為類鑽碳奈米複合薄膜。
將HMDSO膜沉積於前處理的SDK11鋼材，進行磨耗測試。測試的結果顯示：所形成的類鑽碳奈米複合薄膜與鋼材基板之間具有良好的附著力，同時又具有釋放殘留應力的能力，因此可以沉積較厚的薄膜於鋼材基板上。經由實驗條件的調整，利用多層鍍膜的方式(a-C:H/HMDSO)可以在鋼材基板上沉積硬度值達18 GPa，厚度為1mm，但殘留應力僅有1~2 GPa的薄膜。
同時，在本論文中以含有Si-C、Si-C-N的有機金屬化合物進行鍍膜，藉此進行類鑽碳膜奈米粒子的形成機制。經高解析穿透分析式電子顯微鏡進行微結構分析亦可觀察到奈米粒子(晶體)的存在，惟使用的反應物不同，所形成的奈米粒子型態與結晶狀態也不相同。若以電容式電漿通入HMDSO為反應物進行薄膜沉積，由高解析穿透分析式電子顯微鏡分析並未有奈米晶體存在。由此看來，反應物的種類並非奈米晶體形成機構的主要因素。在本論文中將藉由分析感應耦合電漿中的電子溫度與電子密度，推測類鑽碳奈米複合薄膜的形成機構與使用的感應耦合式電漿系統有關，但所形成的奈米粒子種類則與所使用的有機金屬反應物有關。
本論文並以感應耦合電漿輔助電子槍蒸鍍方式來成長矽奈米晶體複合薄膜，並進一步將所沉積的薄膜進行材料結構、光電性質、元件電性與發光性質的分析。由高解析穿透分析式電子顯微鏡顯示此奈米粒子複合薄膜是以非晶質的氮化矽為基質包覆矽奈米晶體所形成。由螢光光譜的分析中可發現，所沉積的矽奈米晶體複合薄膜，其發光光譜位於450 nm (相當於3.0 eV能帶間隙)，與一般文獻中記載的矽奈米晶體複合薄膜的發光光譜位於紅光波段並不相同。此外，由於氮化矽的能帶間隙為4.1 eV，遠較矽奈米晶體的能帶間隙1.8 eV高，且分析矽奈米晶體與氮化矽相對的能帶關係可知：以此矽奈米晶體複合薄膜作為光電元件的發光層，寬能隙的氮化矽具有侷限陰極與陽極所注入的電子與電洞，而使電子與電洞得以在發光作用層的發光中心結合，以產生激發光的功能。
在光電元件的電性研究方面，藉由改變氣相中不同的N2、H2與Ar的比例進行矽奈米晶體複合薄膜的沉積。由電流與電壓之間的量測分析可知，隨著氣相中的N2比例愈高，電子與電洞被侷限的效果就愈明顯，且電流與電壓的關係呈現二極體的關係。此外，亦嚐試瞭解不同的低功函數材料作為元件陰極的影響，由實驗的結果發現，以Ca/Ag來取代Al為陰極材料，可以使輝度提升一倍以上。

Two subjects on the nanocomposite films have been studied. The first is the deposition of diamond-like carbon nanocomposite films for tribological applications. The formation mechanism of nanoparticles embedded in diamond-like carbon matrices was investigated. The second is the study of the optoelectronic properties, nano-structure and electric properties of silicon nanocrystal composite films. The optoelectronic device was fabricated with the nanocomposite films.
In studying the diamond-like nanocomposite films, the major efforts have been concentrated on overcoming the problems of conventional diamond-like carbon (a-C:H or DLC) films, such as high residual stresses, poor adhesion, etc. DLC films have attracted widespread attention due to their great potentials in high tech tribological industries, optical device and biological materials, etc. However, the properties of DLC films depend mainly on the ion impact energy, which is a critical factor determining the fraction of sp3 carbon and the hydrogen content in the dense random carbon network. When the ion impact energy is high, the DLC films have large residual stresses resulting in poor film adhesion on the substrate and coating. In this study, Si-C-O organometallic precursor (HMDSO) was employed to deposit modified the diamond-like carbon films. X-ray photoemission spectroscopy (XPS) analysis suggested that nanoparticles were formed embedded in the diamond-like carbon matrices. According to the analysis with high-resolution analytical electron microscopy (HRAEM), we observed amorphous SiOx nanoparticles were formed in the diamond-like carbon films.
HMDSO films were deposited on the nitrided and Cr-plated SKD11 steel substrates to analyze the tribological properties. The adhesion between the HMDSO films and the steel substrate was formed to be improved over the conventional DLC films. Due to the fact that HMDSO films could release compressive stresses, the thickness of the film could be larger than 1 mm. By modulating the experimental conditions, we can deposit a-C:H/HMDSO multilayer on the steel substrates. The residual stress of the film was reduced from 15 GPa to 2 GPa and the hardness was maintained at about 16 GPa.
We also studied the mechanism of nanoparticle formation. Another organometallic precursor containing Si-C and Si-C-N was employed to deposit diamond-like nanocomposite films. Based on HRAEM, we also observed that nanoparticles were embedded in the amorphous diamond-like carbon matrix. The main difference is the shape of nanoparticles. When we deposit HMDSO films by capacitance-coupled plasma, the films contained no nanoparticle. By measurement with a Langmuir electrostatic probe, the electron temperature and density of the plasma were obtained. Finally, we concluded that the nanoparticle formation mechanism were related with the inductively-coupled plasma, and the shapes of nanoparticles were depended on the precursors.
The silicon nanocrystal composite films were deposited by the inductively-coupled plasma assisted electron-gun evaporation. Silicon nanocrystals were found to be embedded in the amorphous silicon nitride matrix. From photoluminescence spectroscopy measurement, the emission peak was about 450 nm different from the results in literature. The band gap of the amorphous silicon nitride is about 3.5 eV larger than that of the silicon nanocrystals (~1.8 eV). Silicon nitride has a large band gap to confine electrons and holes within silicon nanocrystal fro further recombination and photon emission. Therefore, we can use the silicon nanocrystal composite layer as the active layer for light emission.
For the device fabrication, we modulate the compositions of N2, H2 and Ar to deposit various silicon nanocrystal composite films. The J-V curve shows that the device has diode characteristics and the effect of electron and hole confined was enhanced by increasing the N2 composition in the gas during depositions. Additionally, various low work function materials were employed as the cathode material to improve the electron injection. The luminance was increased by using the Ca/Ag cathode to replace Al as cathode.

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