本論文研究利用最佳化銅製程化學機械研磨的細拋研磨步驟，改善和提升化學機械研磨系統最重要研磨均勻度。在適當的研磨移除率下，獲取較佳的研磨均勻度，並改善銅金屬殘留、銅碟陷與氧化層侵蝕等。銅化學機械研磨含粗磨及細磨兩步驟；同時含有化學反應和機械力學兩大部分，是一個非常複雜的動態反應機制。利用粗磨步驟快速移除大部分銅金屬層，剩下的殘留的銅層則由細磨步驟負責精細的去除。但在細磨的部驟中將同時面對研磨金屬銅/阻障層/介電層及氧化物等不同材料的挑戰，因此細磨具有高度的挑戰性。本文係針對這個挑戰性作系統化最佳化的研究。吾人利用晶圓半導體廠八吋和十二吋所使用的美商應用材料所生產的銅製程化學研磨機(Mirra-Mesa)，配合半導體廠的晶片生產製程技術，研究細磨製程研磨效率的改善；包括(1) 研磨壓力對研磨移除率和均勻度的影響，(2) 研磨平台對研磨移除率和均勻度的影響，(3) 研磨墊溝槽深度對研磨移除率和均勻度的影響。研究結果得到一個極佳化的細磨製程，歷經半導體工廠一年的實地驗證，確實有效。值得一提的是，這些研磨壓力的變更、研磨平台的平整度和研磨墊溝槽深度的控制，對厚度和均勻的最佳化改善並不需要重新研發設計機台設備或研磨材料，就可執行。

In this thesis, we focused on the optimization of the soft landing polish step in a Cu chemical mechanical planarization (Cu CMP) process. With the optimized soft landing polish, one can achieve a better uniformity and less Cu residue, dishing, erosion, etc.
Cu CMP has both bulk polishing and soft landing polish steps to flat wafer surface. During the CMP process, bulk polishing step removes the most Cu layer firstly, then using the soft landing polish step to eliminate the Cu residue preciously. However, the soft landing polish would face various materials such as Cu metal layer, barrier, dielectric layer and oxide during etc in the same time, thus should be paid more attention.
In this work, we adopted the Cu CMP machine (Mirra Mesa, Applied Materials) commonly used in an 8” and 12” foundry for study. The optimization study includes (1) the effect polishing pressure on uniformity; (2) the effect of polishing platen leveling on uniformity; (3) the effect depth of polish pad grooves on remove rate and uniformity. After study in a production line for more than one year, we obtained an applicable and better procedure for the soft landing polish. It is worthy to note, the polishing working pressure modify and PAD platen surface leveling control and PAD surface groove depth control the remove rate and uniformity that be improved in the optimized procedure can be executed without change the design of CMP equipment.

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