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研究生：	葉長青 Yeh, Charng-Ching
論文名稱：	透明導電膜氮化鈦在塑膠基板上之製作 The Fabrication of the Transparent Conductive Films (TiN) on Plastic Substrates
指導教授：	王永和 Wang, Yeong-Her 洪茂峰 Houng, Mau-Phon
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2002
畢業學年度：	90
語文別：	英文
論文頁數：	73
中文關鍵詞：	氮化鈦、透明導電膜
外文關鍵詞：	Titanium nitride, Transparent conductive film
相關次數：	點閱：95 下載：1
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透明導電膜氮化鈦在塑膠基板上之製作

葉長青* 洪茂峰** 王永和**
國立成功大學電機工程學系微電子所

摘要
於LCD技術中，透明導電膜一般均製作在玻璃上。但塑膠基版有量輕、形薄、及耐摔的優點，故為下一世代LCD之基板材料。
銦錫氧化物(ITO)和金是一般常用的透明導體。但是金的硬度不夠，ITO的抗腐蝕性不佳。氮化鈦是一種陶瓷材料，通常被使用作防腐蝕的表面塗層。它不但導電且當厚度屬於幾百埃時在可見光的範圍(380-780 nm)是呈現透明狀。我們將試著作出透明導電膜TIN。
本研究的目的即使用反應性射頻磁控濺渡法在塑膠基板上成長TIN薄膜。並探討鍍製功率及基板溫度對薄膜性質的影響。實驗中，我們使用原子力顯微鏡、化學分析電子光譜儀、歐傑電子光譜儀、四點探針儀及可見光光譜儀來分析薄膜的特性。最後在加熱基板及鍍製功率120w的條件下得到較低的電阻率: 3.55*10-3Ω•cm。在波長550 nm時，最高的穿透率81% 出現在鍍製功率60w的條件下。

* 作者
** 指導教授
關鍵詞：透明導電膜、氮化鈦

The Fabrication of the Transparent Conductive Films (TiN) on Plastic Substrates

Charng-Ching Yeh* Mau-Phon Houng** Yeong-Her Wang**
Institute of Microelectronics
Department of Electrical Engineering
National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
Abstract
. For producing the LCD (Liquid Crystal Displays), the transparent conductive films are generally deposited on the glass. Because plastic substrates have the advantages of low cost, light-weighted, and rugged characteristics, people think it the materials of the next period for the substrate of LCD.
Indium tin oxide (ITO) and gold are commonly used as transparent conductors. However, gold does not have a high hardness and IT0 is not resistant to corrosion. Titanium nitride is a kind of ceramic which is used as a protective coating for corrosion and wear. It is conductive and transparency can be obtained in films with a thickness of some tens of nm, As the wavelength of visible light is 380-780 nm. We tried to form such very thin TiN films to obtain a transparent and conductive nitride coating.
The objectives of this research are to deposit TiN films on the plastic substrates by reactive RF sputtering. In addition, the effects of sputtering power and substrate temperature on the characteristics of the sputtered thin films are also investigates. In the experience, the properties of the TiN films are analyzed from AFM, XPS, AES, Four-Point-Probe, and Spectrophotometer. We get TiN films of electrical resistivity as low as 3.55*10-3Ω•cm by heating substrate with RF power 120w. When the wavelength is 550 nm, the highest transmittance is 81% by heating substrate with RF power 60w.

* The author
** The advisor
Key Words: Transparent conductive film, Titanium nitride (TiN)

Abstract 4
Contents 6
List of Figures 7
List of Tables 8
Contents
Chapter 1 Introduction 9
1.1 General Introduction 9
1.2 Motivation 12
1.3 Ooutline of the Thesis 13
Chapter 2 Background Theory 15
2.1 Sputtering System Techniques 15
2.1.1 Principle of Sputtering 15
2.1.2 Glow Discharge DC Sputtering 16
2.1.3 High Rate Sputtering Insulators 17
2.1.4 Reactive Sputter Deposition 19
2.2 Characterization of the Plastic Substrates 19
2.2.1 Introduction 19
2.2.2 Thermal Stability of Plastic Substrates 21
2.2.3 Chemical Resistance of Plastic Substrates 23
2.2.4 Surface Roughness Conditions of Plastic Substrates 23
2.3 Characterization of Thin Film Deposition 24
2.4 Fundamental Characteristics of TiN Films 25
Chapter 3 Experiments and Results 27
3.1 Preparation and Process Concepts 27
3.1.1 Pre-Processing Cleaning 27
3.1.2 Sputtering System and Process Concepts 27
3.2 Characterization of Films 28
3.3 Deposition of Titanium Nitride 31
Chapter 4 TiN Characteristics and Morphology 34
4.1 Physical and Chemical Properties 34
4.1.1 Surface Morphology 34
4.1.2 XPS Surface Analysis of Ti 2p spectra 35
4.1.3 AES Surface Analysis of N/Ti Ratio 36
4.1.4 AES Depth Profile 37
4.2 Electrical Properties and Transmittance of Thin Films 37
4.2.1 Electrical Resistivity of Thin Films 37
4.2.2 Transmittance of Thin Films 38
Chapter 5 Conclusions and Future Work 39
5.1 Conclusions 39
5.2 Future Works 40
References 41
List of Figures
Fig. 1.1 Outline of this thesis 45
Fig. 2.1 (a) The sputtering process(Chapman 1980, p 178)
  (b) A simple DC sputtering system(Chapman 1980, p 178) 46
Fig. 2.2 The sputtering yield of argon ions on copper ( Carter & Colligon 1968, p 182 ) 47
Fig. 2.3 The influence of a magnetic field on electron motion ( Chapman 1980, p 263 )  48
Fig. 2.4 Roughness observations using AFM over 5*5 um2 scans on ARTON  49
Fig. 2.5 Roughness observations using AFM over 5*5 um2 scans on PET  49
Fig. 2.6 The flow of the nuclei growth   50
Fig. 2.7 models of crystallizing  51
Fig. 3.1 Sketch of the sputter setup used for multilayer sputtering system 57
Fig. 3.2 The experimental process flows  58
Fig. 3.3 The schematic diagram of four probe electrode  59
Fig. 3.4 Correction factor for the measurement of resistivity using four-point probe  59
Fig. 3.5 The diagram of TiN thickness vs. deposition time under different RF power 60
Fig. 4.1(a)The roughness of TiN films with RF power 60w         (b) The roughness of TiN films with RF power 80w  61
Fig. 4.1 (c) The roughness of TiN films with RF power 100w      (d) The roughness of TiN films with RF power 120w  62
Fig. 4.2 The Ti2p3/2 spectra of a typical TiN film at different substrate heating temperature  63
Fig. 4.3 (a) Auger spectrum in the differential distribution for a TiN film with RF power 60w  64
Fig. 4.3 (b) Auger spectrum in the differential distribution for a TiN film with RF power 80w  64
Fig. 4.3 (c) Auger spectrum in the differential distribution for a TiN film with RF power 100w  65
F Fig. 4.3 (d) Auger spectrum in the differential distribution for a TiN film with RF power 120w  65
Fig. 4.4 Dependence of N/Ti atomic ratio on RF power 66
Fig. 4.5(a) Auger depth profiles of Reactive Ion Sputtered TiN film on the ARTON  67
Fig. 4.5(b) Auger depth profiles of Reactive Ion Sputtered TiN film on the PET  67
Fig. 4.5(c) Auger depth profiles of Reactive Ion Sputtered TiN film on the Si  68
Fig. 4.5(a) Auger depth profiles of Reactive Ion Sputtered TiN film on the SiO2/Si  68
Fig. 4.6 The diagram of resistivity vs. thickness  69
Fig. 4.7 (a) The transmittance of the TiN Films deposited with RF power 60w  70
Fig. 4.7 (b) The transmittance of the TiN Films deposited with RF power 80w  70
Fig. 4.7 (c) The transmittance of the TiN Films deposited with RF power 100w  71
Fig. 4.7 (d) The transmittance of the TiN Films deposited with RF power 120w  71
Fig. 4.8 The diagram of transmittance vs. thickness 72
List of Tables
Table 2.1 Typical properties of polymers  52
Table 2.2 Results of the thermal stability test of the plastic substrates  53
Table 2.3 Chemical resistance of plastic substrates  54
Table 2.4 Physical Properties of Titanium Nitride (TiN) Coatings  55
Table 2.5 Some important comparisons of various TiN films  56
Table 4.1 The properties of TiN films deposited with differert RF power  73
                                    

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