本論文利用共濺鍍的方式製作銅銦鋁先驅層，藉由控制各靶材的功率，調控先驅層的成份比例，進而調變硒化製程後之薄膜的能隙。硒化完成之銅銦鋁二硒薄膜，需再經過硫化熱退火的方式，以硫取代硒形成銅銦鋁二硫。銅銦鋁二硒的能隙因鋁含量之多寡可由1 eV到2.7 eV，而銅銦鋁二硫的能隙範圍則可擴大到1.5 eV到3.5 eV，擴大能隙為實驗之主要目的之一，藉由硫化及摻雜鋁，將能隙擴大到可見光之發光波段。
在實驗中，硫化製程可分為二種，第一種是高溫硫化銅銦鋁二硒，將薄膜中的硒完全取代為硫，第二種方式低溫硫化，僅在薄膜表面形成銅銦鋁二硫。硫化完成之後，以化學水浴法製備硫化鋅層，作為元作之N型材料，形成硫化鋅／銅銦鋁二硫之異質P-N接面。同質P-N接面的製程則是在高溫硫化之同時作鋅的摻雜。先濺鍍一層鋅在銅銦鋁二硒之上，再進行高溫化，硫化同時進行鋅的表面擴散，形成銅銦鋁二硫之同質P-N接面。
製程的最後，在N型區上方濺鍍一層摻鋁之氧化鋅（AZO），作為透明導電層，接著用銀膠製作上電極，完成二極體元作之製作。在濺鍍先驅層、化學水浴法製備硫化鋅或濺鍍鋅及濺鍍AZO時，會分別使用三個金屬罩（shadow mask），將元件規範成圓形區域，圓形區域由大至小。使用金屬罩的目的在於讓電流的分佈更加均勻，並防止非相連之薄膜層短路。元件完成之後，以電壓源偏壓進行元件發光測試，並觀察到不連續的光產生。
本實驗以掃描式電子顯微鏡（SEM）、能量分散光譜儀（EDXS）、X光繞射儀（XRD）、I-V量測、拉曼光譜儀（Raman）、低掠角繞射法（GIXRD）及螢光光譜儀（PL）等分析儀器，遂實驗步驟量測其結果，包括薄膜的表面形貌、成分比例、結構特性、二極體特性曲線等資料。
由分析結果顯示，硫化鋅／銅銦鋁二硫之異質P-N接面二極體的特性曲線最佳。

In this thesis, the CuInAl metallic precursors were deposited by co-sputtering deposition technique. The composition ratio of the precursors was controlled by the power of each metallic targets（especially Al）, which influences the energy-gap of the post-selenized film. The post-selenized CuInAlSe2 film would be sulfurized by a high temperature sulfurization process and transformed into a CuInAlS2 film. The band gap of a CuIn1-xAlxSe2 film can be varied from 1 eV to 2.7 eV depending on the Al content, whereas the band gap of a CuIn1-xAlxS2 film is vaired from 1.5 eV to 3.5 eV. The bandgap modulation is one of the main purposes of this work. By using the sulfurization and Al-doping, the CIAS film's bandgap can be adjusted to be within the ultraviolet–visible region.
There were two different sulfurization processes in this study. The high temperature sulfurization could completely transform CuInAlSe2 into CuInAlS2. The surface sulfurization could sulfurize the skin layer of the CuInAlSe2 film. After the sulfurization process, ZnS film was deposited by chemical bath deposition method on the CuInAlS2 film to form a CuInAlS2/ZnS heterogeneous p-n junction. The homogeneous p-n junction was formed by transforming a skin layer of p-CuInAlS2 to a n-CuInAlS2, which can be done by Zn-doping. By sputtering Zn on CuInAlSe2 film and sulfurized it at high temperature, a CuInAlS2/CuInAlS2:Zn homogeneous p-n junction can be fabricated.
Finally, the AZO film was deposited as a transparent conductive layer. The Ag electrode was made by conductive silver paint, and the diode was fabricated. During the deposition of precursors, ZnS/Zn and AZO layer, shadow masks were used for forming a circle active area for the purpose of spreading current evenly. The devices were tested with forward bias, and a flash of lighting from the fabricated diodes can be observed.
Scanning electron microscopy and energy dispersive X-ray spectroscopy were used to observe the surface morphology and film composition. The crystalline phase and orientation were determined by X-ray diffraction patterns, grazing incidence X-ray diffraction and raman spectroscopy. Photoluminescence measurements were to identitfy the bandgap of the CuInAlS2 film. I-V measurements were used to investigate the quality and characteristics of the diodes fabricated.
The measurement results show that the CuInAlS2/ZnS heterogeneous junction diode has better diode characteristics than CuInAlS2 homojunction diode.

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