本論文研究K-band之CMOS低雜訊放大器及功率放大器，以及ㄧ60-GHz之CMOS可調變增益放大器，其中主要是針對汽車防撞雷達系統及60-GHz WPAN 相位陣列天線接收機系統來做設計。15 - 22 GHz CMOS寬頻低雜訊放大器，為一級疊接架構加共源級架構加上一小電感來達到寬頻的效果，而量測結果也做了討論，並猜測問題在於晶片內部地的問題，並針對此問題做討論。研製之兩個K-band CMOS功率放大器，一為24-GHz高效率功率放大器，另一為18-25 GHz CMOS 寬頻功率放大器；K-band CMOS功率放大器為一兩級之疊接架構並針對高功率做設計，量測結果有些許不穩定及頻漂，考慮也是晶片內部地的問題，因此在結果討論中也模擬了此問題；18-25 GHz CMOS 寬頻功率放大器是使用匹配來達到所要之頻寬，量測結果輸入返回損失符合模擬結果，而小訊號增益則與模擬有段差距，此問題在論文中也做了討論。最後為60-GHz CMOS 可調變增益放大器，為了改善其相位對增益之平坦度，使用改良式疊接架構來設計，量測結果上有些許的頻漂及輸出不穩定的問題，雖然如此，但在相位平坦的特性上有表現出來。

This thesis presents the design of 24- and 60-GHz CMOS amplifier RFICs for millimeter-wave communication applications. The designed RFICs are fabricated with TSMC CMOS 0.18 μm and 90-nm standard processes, respectively. At first for the Ka-band amplifier design, a 15 - 22 GHz wideband CMOS low noise amplifier (LNA), 24-GHz high-efficiency power amplifier (PA), and 18-25 GHz wideband CMOS power amplifier are presented. The simulation and measurement results are compared and discussed. Secondly, a 60-GHz 90-nm CMOS variable gain amplifier (VGA) is presented. For the desired low phase-variation in the variable gain control range, the measured phase-variation of the VGA is less than about 10 degree.

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