本論文研究之主要目的為成長金屬氧化物奈米結構，並且分別研製光電與感測元件以及分析其元件特性。因不同之材料及應用可分為三個部分。第一部分為探討P型氧化銅奈米線成長及場發射元件製作與量測，本實驗成功的在銅/氧化銅/玻璃基板上成長氧化銅奈米線。結果顯示根據預先沉積銅膜厚度的不同，同樣生長時間下越厚的銅膜可生長出較高密度和長度的氧化銅奈米線並且有較低的起始電場和較大的場增強因子。此外，我們在測量場發射特性時，外加紫外光照射，由於紫外光的能量大於氧化銅的能隙，因此在照射下會激發出電子電洞對，可有效增強材料之場發射特性。為了能更進一步地增強場發射元件的特性，我們透過快速熱升溫處理製作出銅/氧化銅的複合材料奈米線。利用玻璃基板上成長的氧化銅奈米線在氫氣環境下，快速升溫至攝氏270度，可發現透過快速升溫的處理後，許多銅奈米顆粒在奈米線的表面形成，結果顯示在攝氏270度下還原的銅/氧化銅奈米線有最低的起始電場和最大的場增強因子。另一方面，我們在可撓式矽基板上製作出三維的氧化銅奈米線結構。首先利用矽穿孔和銅電鍍技術在矽基板上製作出直徑為10微米的銅柱陣列。再利用化學機械研磨技術製作出可撓式矽基板，最後透過熱氧化法在銅柱的正面及側邊上生長氧化銅奈米線並量測其場發射特性。透過上述製程可製作出高密度三維氧化銅奈米線結構並與矽基板有良好的附著性，並具有優良的場發射特性，未來也可應用在可撓式場發射元件上。
第二部分在N型材料方面，我們透過氣-液-固成長機制直接在氮化鎵/藍寶石基板上加熱成功合成出單斜晶型氧化鎵奈米線。氧化鎵奈米線對濕度感測有很高的靈敏性，當相對濕度越高，量測到的電流值會隨著相對溼度提升而等效增加。由於氧化鎵是個寬能隙的半導體材料，也可做為一個良好的紫外光偵測器。為了觀察濕度與紫外光之間對材料特性的交互影響，利用氧化鎵奈米線量測不同相對濕度環境下的特性時，加入紫外光的照射；同樣地，在做為紫外光檢測器時，改變環境的相對濕度，觀察光響應的變化。
第三部分為應用金屬氧化物材料製作出電晶體與感測元件，並透過三維堆疊封裝技術與太陽能電池結合製作出自我供電型的元件。本實驗利用非晶氧化銦鎵鋅薄膜作為主動層與高介電常數五氧化二鉭作為閘極介電層來製作薄膜電晶體。並且將薄膜電晶體與指叉背接觸太陽能電池利用三維堆疊封裝技術結合在單一晶片上。在太陽光模擬器照射下，太陽能電池可提供閘極一電壓使其導通，對薄膜電晶體而言可作為一太陽能開關。此外，我們分別應用氧化鎢薄膜製作出濕度感測器以及氧化鎵薄膜製作出光檢測器。同樣地，在指叉背接觸太陽能電池上利用三維堆疊技術以並聯方式結合濕度感測器和光檢測器，成功製作出一多功能自我供電感測元件。透過太陽光模擬器的照射，可提供一偏壓給感測元件，可用來量測環境中相對濕度的變化；利用不同能隙的氧化鎢和氧化鎵薄膜製作成光檢測器，更可分別偵測不同波段的紫外光，做為一雙波段光檢測器。

The main goal of this dissertation is the synthesis and application of metal oxide nanostructure. The dissertation is divided into three sections due to different kind of material and application. The first one is the investigation of p-type CuO nanowires (NWs) and application for field emitters. In the beginning of this dissertation, the growth of p-type CuO NWs by thermal oxidation of Cu film deposited on CuO/glass template is reported. It was found that we could achieve a higher NW density, longer average NW length by increasing the Cu film thickness. The sample with higher NW density has low turn-on field and large field enhancement factors (β). Furthermore, it was found that we could improve the field emission ability and reduce the turn-on field from by simply illuminating the samples with ultraviolet (UV) light. In order to enhance the field emission properties further, hybrid Cu/CuO NWs are fabricated by reduction of CuO NWs. It was found that the surfaces of CuO NWs partially transformed into Cu via rapid thermal annealing (RTA) at 270 °C in H2 ambiance, forming hybrid Cu/CuO NWs. The results show that hybrid Cu/CuO NWs efficiently reduce turn-on field and increase β values. Furthermore, a novel three-dimensional (3-D) structure with CuO NWs is demonstrated. Cu rods with diameter of 10 μm on a flexible silicon substrate were fabricated using through silicon via (TSV) process and chemical mechanical polishing (CMP). 3-D CuO NWs were then grown vertically and laterally on the top and sidewall of the Cu rods via heat treatment in air. The sample performs great field emission properties through above fabrications. The 3-D CuO NWs are suitable for future applications that require a flexible substrate.
Second, the growth and analysis of n-type monoclinic Ga2O3 (β-Ga2O3) sensors are studied. β-Ga2O3 NWs were synthesized via a vapor-liquid-solid mechanism by heating a GaN/sapphire template. It was found that the conductivity of the β-Ga2O3 NW humidity sensors increased monotonically when the relative humidity (RH) was increased. To determine the relationship between UV light and humidity sensing properties, the humidity was measured with and without UV illumination, and the UV photoresponse was measured at various RH values, respectively.
On the third part of this dissertation, metal oxide devices integrated with interdigitated back contact (IBC) photovoltaic (PV) cell as a self-powered device is demonstrated. Ta2O5/a-IGZO thin film transistor (TFT) was fabricated on the rear side of crystalline-Si IBC PV cell by vertical stacking method. The connection of a-IGZO and IBC PV cell was linked by depositing Al to form a single chip as the function of self-powered solar device. This device exhibits switch property of on/off status under illuminated or dark environment. Moreover, self-powered multi-functional sensors were fabricated by integrating an IBC PV cell with a vertically stacked structure into a single chip. The IBC PV cell was vertically connected with WO3 thin film humidity sensor and Ga2O3 thin film PD in parallel. The measured current of WO3 thin film humidity sensor increased monotonically when the RH was increased. The cutoff wavelengths of WO3 and Ga2O3 thin-film were around 370 and 250 nm, respectively, which can be applied to dual band PDs.

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Chapter 4
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Chapter 5
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Chapter 6
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